MMRF1306HR5 - 1250W CW 50V LDMOS RF MOSFET 1.8-600 MHz | NXP
MPN: MMRF1306HR5 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $245 | $245.00 |
| 10 | $230 | $2,300.00 |
| 50 | $215 | $10,750.00 |
| 100 | $198 | $19,800.00 |
| 500 | $178 | $89,000.00 |
MMRF1306HR5 Overview
An RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor FET optimized for high-frequency, high-power amplification. It belongs to the hierarchy: RF power transistor -> RF power MOSFET -> LDMOS -> power semiconductor. LDMOS devices dominate commercial and defense RF power applications because they combine high gain, high drain breakdown, and excellent thermal stability in a single planar CMOS-compatible process, enabling broadband amplifier line-ups from HF through UHF.
Key features include 1250 W typical CW output power, 24 dB power gain at 230 MHz, 65% typical drain efficiency, and unmatched input/output designs that allow wideband use without external matching networks. The device operates from a 50 V drain supply and integrates electrostatic discharge (ESD) protection plus high-VSWR ruggedness for harsh radar and broadcast environments.
The MMRF1306HR5 uses NXP's high-ruggedness LDMOS process with a via-tunable lateral source structure and gold metallization for long-term thermal cycling reliability. The unmatched common-source configuration simplifies broadband amplifier PCB layout and supports both CW and pulsed waveforms. Internal matching is limited to the package parasitics, leaving frequency-band tuning to the external matching network on the amplifier evaluation board.
Typical applications include HF/VHF radar transmitters, industrial scientific medical (ISM) band heating, low-band UHF broadcast amplification, plasma generation, and high-power communications line-ups from 1.8 to 600 MHz. The wide frequency coverage makes it a versatile building block for multi-band amplifier modules.
When designing with this device, ensure the thermal interface compound and mounting torque follow the NXP application note recommendations for the NI-1230H-4S package, since the ceramic air-cavity flange is the primary heat path. The unmatched input/output requires per-band matching networks but allows a single part to cover multiple applications, reducing bill-of-material complexity.
This page synthesizes NXP datasheet parameters, distributor pricing, drop-in same-package alternatives, and practical thermal and matching notes not all collected in the original manufacturer datasheet, providing an engineer-ready reference for amplifier design evaluation.
Drop-in alternatives for MMRF1306HR5 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MMRF1306HSR5
✅ Drop-In📋 Reference alternative (not in catalog)
MMRF1304HR5
✅ Drop-In📋 Reference alternative (not in catalog)
MMRF1307HR5
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MMRF1306HR5 Maximum Ratings & Electrical Characteristics
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MMRF1306HR5 |
| Transistor Type | N-Channel Enhancement-Mode Lateral RF Power LDMOS |
| Frequency Range | 1.8 MHz to 600 MHz |
| Output Power (CW) | 1250 W typical |
| Drain-Source Voltage (VDSS) | 50 V |
| Power Gain | 24 dB at 230 MHz |
| Drain Efficiency | 65 % typical |
| Operating Mode | Enhancement Mode |
| Configuration | Separate, 2 elements |
| Package | NI-1230H-4S (air-cavity ceramic flange) |
| Mounting Type | Surface Mount / flange mount |
| Terminal Form | Flat (flange lead) |
| MSL Level | Not Applicable (hermetic air-cavity package) |
| Peak Reflow Temperature | 260 C (max 40 s) |
| Transistor Element Material | Silicon |
| RoHS Status | Compliant |
| Application Ruggedness | High VSWR (designed for harsh radar/pulse use) |
MMRF1306HR5 ni-1230h-4s (air-cavity ceramic flange) Pin Configuration Guide
Pin configuration for MMRF1306HR5 (ni-1230h-4s (air-cavity ceramic flange) package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for MMRF1306HR5.
Refer to the datasheet for full pin configuration.
MMRF1306HR5 Safe Operating Area (estimated from datasheet typical curves)
Typical Applications
MMRF1306HR5 is suitable for 6 applications: HF/VHF Radar Transmitter, Industrial RF Heating (ISM Band), Low-Band UHF Broadcast Amplification, Plasma Generation and Particle Accelerator RF, High-Power Communications Line-up, Pulsed Radar Power Amplifier.
HF/VHF Radar Transmitter
The MMRF1306HR5 is well suited to HF and VHF radar power amplifiers because its 1.8-600 MHz coverage spans the typical coastal and over-the-horizon radar bands while its 1250 W CW rating at 50 V provides the radiated power needed for long-range detection. Its 24 dB gain at 230 MHz means a single device stage can replace a chain of smaller transistors, simplifying driver topology. The high-VSWR ruggedness is critical in radar where mismatched loads from antenna scan effects are common - the device tolerates the reflected power without destruction. Typical implementation drives the gate from a 50 W driver stage and uses a per-band matching network on the drain side.
Recommended
Industrial RF Heating (ISM Band)
Industrial heating at 13.56, 27.12, and 40.68 MHz ISM bands benefits from the MMRF1306HR5's high continuous-wave power rating and unmatched broadband response. A single amplifier module can serve multiple heating frequencies by swapping the output matching network, dramatically reducing system SKU count. The 65% typical drain efficiency keeps cooling requirements manageable in continuous-duty industrial environments, while the 50 V VDSS rating permits standard off-line-derived DC rails. The NI-1230H-4S flange bolts directly to a liquid-cooled cold plate for round-the-clock operation.
Recommended
Low-Band UHF Broadcast Amplification
The MMRF1306HR5 operates up to 600 MHz, covering the low-band UHF broadcast spectrum used by some DVB-T and analog TV transmitters. Its 1250 W CW output enables a single-ended final stage in lower-power transmitters or a parallel-combined stage in high-power units. The 24 dB gain reduces the number of driver stages required ahead of the final, simplifying the line-up and lowering the overall bill of materials. Designers should follow NXP's reference design for broadcast band optimization, including proper drain bias sequencing to protect the LDMOS during power-up.
Recommended
Plasma Generation and Particle Accelerator RF
Plasma generation and small particle accelerator RF sources need precise, high-power CW drive at HF/VHF. The MMRF1306HR5's high VSWR tolerance is essential in plasma chambers where load impedance varies dynamically with plasma density. Its broadband coverage lets a single amplifier serve multiple process frequencies, and the hermetic ceramic package holds up under the vacuum-compatible assemblies used in scientific research. Operate the device with conservative bias (slightly under the 50 V nominal) to maximize lifetime in continuous-pulsed service.
Recommended
High-Power Communications Line-up
Military and commercial HF/VHF communication transmitters use the MMRF1306HR5 as the final or driver stage when 1 kW+ output is required. The unmatched input/output design supports rapid frequency hopping across the HF and low-VHF range without retuning, ideal for ALE (Automatic Link Establishment) and frequency-agile tactical radios. The 50 V rail is conveniently derived from 28 V military bus systems with a boost converter, and the high gain reduces heat dissipation in the upstream driver chain.
Recommended
Pulsed Radar Power Amplifier
Pulsed radar benefits from the MMRF1306HR5's high-VSWR ruggedness and continuous-wave capability. While the part is rated for 1250 W CW, pulsed operation can drive higher peak envelopes as long as average power stays within the thermal budget. The unmatched broadband response allows the same hardware to support multiple radar modes (search, track, identification) operating at different pulse widths and PRFs. Drain modulation and gate pulsing techniques from the NXP application notes can be used to tailor efficiency for each pulse profile.
Recommended
Recommended Products Summary
Engineering reference data for MMRF1306HR5 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MMRF1306HSR5 | MMRF1304HR5 | MMRF1307HR5 |
|---|---|---|---|---|
| Package | NI-1230H-4S | NI-1230H-4S - same | NI-1230H-4S - same | NI-1230H-4S - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Drain Voltage (VDSS) | 50 V | 50 V | 50 V | 50 V |
| Frequency Range | 1.8-600 MHz | 1.8-600 MHz | 1.8-600 MHz | 1.8-600 MHz |
| Transistor Type | LDMOS, N-Channel Enhancement | LDMOS, N-Channel Enhancement | LDMOS, N-Channel Enhancement | LDMOS, N-Channel Enhancement |
Key Differentiators
- Same-die drop-in alternative with flange lead variant (vs MMRF1306HSR5)
- Same package family, lower output power tier (vs MMRF1304HR5)
- Unmatched broadband design covers HF through UHF (vs BLF188XR (Ampleon))
Design Notes
Estimated: at 1250 W CW output with 65% drain efficiency, the device dissipates roughly 670 W of heat through the NI-1230H-4S flange. Mount to a liquid-cooled cold plate or large forced-air heatsink, applying Wakefield-Type 120 (or equivalent) thermal compound at the mounting interface per the NXP application note. Maintain flange mounting torque specification to avoid ceramic cracking and to keep thermal resistance below the datasheet limit.
The unmatched input/output requires per-band matching networks. Place gate and drain matching components close to the leads to minimize parasitic inductance; use a low-loss PCB substrate such as Rogers RO4350B for the matching area. Keep the DC bias feed lines decoupled with broadband chip capacitors to prevent low-frequency oscillation, and gate-bias the device through a stable low-noise supply to avoid drift in quiescent current.
Do not exceed 50 V VDSS - even brief transients on the drain rail can destroy the LDMOS cell. Add a TVS diode or clamp network across the drain supply and ensure proper sequencing (gate bias on before drain voltage). Avoid running the part into a 100% reflective load without the datasheet-rated VSWR ruggedness margin - while it is designed for high VSWR, continuous full-reflection reduces lifetime.
Use NXP's reference evaluation board layout as a starting point for the amplifier PCB. The gate bias injection network should present a high impedance at the operating RF frequency to prevent signal loss; a quarter-wave stub with a decoupling capacitor at the end is the typical topology. Verify stability by sweeping the load-pull across the full Smith chart at the operating frequency and bias point.
Compliance Information
RoHS compliant per NXP product page. Ceramic air-cavity flange package is hermetic and lead-free. AEC-Q100 not applicable - this is a discrete RF power transistor, not an automotive-qualified IC.
