MRF7S21110HR5 - 33W, 2.17GHz RF Power LDMOS Transistor | NXP
MPN: MRF7S21110HR5 ✗ End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $86.91 | $86.91 |
| 10 | $78.22 | $782.20 |
| 100 | $69.53 | $6,953.00 |
| 500 | $60.84 | $30,420.00 |
| 1,000 | $52.15 | $52,150.00 |
MRF7S21110HR5 Overview
What is an LDMOS RF power transistor? LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a power transistor technology built on a silicon die with a lateral drain structure. LDMOS devices dominate the cellular base-station power amplifier (PA) market because they combine high RF power density, high breakdown voltage (typically 65 V on the drain), excellent thermal conductivity, and competitive cost versus GaN or Si bipolar alternatives. LDMOS sits in the RF power semiconductor hierarchy between GaAs HBTs (used at lower power and frequency) and GaN HEMTs (used at higher frequency and power), and remains the workhorse of sub-3 GHz macro-cell transmitter final stages.
Key features of the MRF7S21110HR5 include a high breakdown voltage rating of 65 V, internally matched input and output for ease of use, integrated ESD protection, a hermetic NI-780 ceramic package for high-reliability operation, and gold-plated leads for low-resistance interconnect. The LDMOS die provides high gain and efficiency for Class-AB PA designs, supporting digital predistortion (DPD) correction for linearity improvement. The internal matching simplifies board layout by reducing the number of external matching components required at the operating frequency.
Technically, the device uses NXP's seventh-generation LDMOS process, which delivers improved thermal performance and ruggedness compared to earlier MRF6/MRF7 generations. The part is specified for 50 ohm operation with the internal matching network, making it a near drop-in final-stage transistor for 2.1 GHz band macro-cell PAs. Designers typically pair it with NXP's driver-stage MRF7S20180 or similar -8 dB gain block, plus a circulator and bandpass filter in the final assembly.
Typical applications include W-CDMA, LTE, and UMTS base-station transmitter final stages at 2.11-2.17 GHz, commercial wireless infrastructure, repeaters and small-cell power amplifiers, and industrial/scientific RF power modules. These uses all benefit from the part's high power density and high linearity.
When designing with this device, use a gold-tin or gold-germanium die attachment on a copper or molybdenum heatsink with adequate thermal vias; the LDMOS die dissipates significant heat at 33 W output, and junction-to-case thermal management is critical to long-term reliability. Apply proper DC bias sequencing (gate voltage before drain voltage) to prevent parametric drift.
This page synthesizes NXP datasheet parameters, distributor pricing context, drop-in family variants and practical thermal bias-design guidance not found in the bare manufacturer datasheet.
Drop-in alternatives for MRF7S21110HR5 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MRF7S21110HSR5
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MRF7S18110HR5
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MRF7S19110HR5
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MRF7S21110HR5 Maximum Ratings & Electrical Characteristics
| Transistor Type | LDMOS, RF Power |
| Frequency | 2.17 GHz |
| Gain | 17.3 dB |
| Voltage - Test | 28 V |
| Current - Test | 1.1 A |
| Power - Output | 33 W (P1dB) |
| Voltage - Rated | 65 V |
| Package / Case | NI-780 (ceramic) |
| Mounting Type | Surface Mount / Screw-Down |
| Technology | LDMOS (Laterally Diffused MOSFET) |
| Operating Mode | CW (Continuous Wave) |
| Polarity | N-Channel |
| Frequency Band | 2110 MHz to 2170 MHz (UMTS Band) |
| Part Status | Obsolete (per datasheet listing) |
MRF7S21110HR5 ni-780 (ceramic) Pin Configuration Guide
Pin configuration for MRF7S21110HR5 (ni-780 (ceramic) package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for MRF7S21110HR5.
Refer to the datasheet for full pin configuration.
Safe Operating Area (MRF7S21110HR5 LDMOS RF Power)
Typical Applications
MRF7S21110HR5 is suitable for 6 applications: UMTS/LTE Base-Station Final Stage, W-CDMA Repeater Power Amplifier, Small-Cell / Micro-Cell Power Amplifier, Industrial / Scientific RF Heating Module, Aerospace / Defense RF Power Module, RF Transmitter Test Instrumentation.
UMTS/LTE Base-Station Final Stage
The MRF7S21110HR5 is purpose-built for the 2110-2170 MHz UMTS Band I / LTE Band 1 cellular transmitter final stage, where 33 W P1dB output and 17.3 dB gain support macro-cell Doherty or single-ended PA topologies. Designers typically place this part after a -8 dB driver stage and feed a bandpass filter plus circulator; the internal input/output matching simplifies the 50 ohm PCB layout, while the 65 V breakdown gives ample margin above the 28 V operating bias. Expected PA efficiency ranges from 35-42% at 10 dB back-off (DPD-corrected), and the LDMOS die behaves predictably under DPD correction - making this device a workhorse for 4G macro-cell radio units.
Recommended
W-CDMA Repeater Power Amplifier
The MRF7S21110HR5's 33 W output and 17.3 dB gain make it well suited for W-CDMA repeater and indoor-distribution amplifier final stages in the 2.1 GHz UMTS band. In a typical repeater the part delivers 10-15 W average output after digital attenuation and ALC loops, while the 65 V breakdown rating protects against antenna mismatch reflected power spikes. The NI-780 ceramic carrier supports screw-down mounting on aluminum or copper heatsinks in confined indoor enclosures, and the internal matching simplifies the RF chain to a bandpass filter plus circulator on the output side.
Recommended
Small-Cell / Micro-Cell Power Amplifier
Outdoor small-cell base stations in the 2.1 GHz LTE band benefit from the MRF7S21110HR5's compact NI-780 footprint and high power density, which let designers fit higher-output PAs into small-cell enclosures. The 33 W pulsed-rated output can be heavily backed off for typical small-cell average power levels (5-10 W), giving high DC efficiency while maintaining EVM compliance. The LDMOS architecture tolerates wide temperature swings in outdoor enclosures, and the 65 V breakdown provides margin against antenna-port ESD and lightning-induced transients when paired with external protection.
Recommended
Industrial / Scientific RF Heating Module
The MRF7S21110HR5's 33 W CW power rating and 28 V DC bias also fit industrial microwave heating, plasma generation, and scientific RF source modules operating in the 2.1-2.17 GHz band. The high breakdown voltage of 65 V supports fast pulsed modulation while protecting against load mismatch in poorly matched industrial loads. Internal matching simplifies the RF chain to a circulator and dummy load on the output, and the LDMOS die supports PWM or linear amplitude control - useful for industrial process repeatability.
Recommended
Aerospace / Defense RF Power Module
Hermetic NI-780 ceramic packaging and high breakdown voltage make the MRF7S21110HR5 suitable for ruggedized aerospace and defense RF power modules operating at 2.1 GHz, including radar test transmitters, telemetry, and EW jammers. The 65 V breakdown supports pulsed-mode operation with high peak-to-average ratios, and the internally matched 50 ohm inputs/outputs reduce parts count in size- and weight-constrained platforms. Expect 30-40% PA efficiency at the 28 V operating bias with gate-bias sequencing per MIL-STD surge requirements.
Recommended
RF Transmitter Test Instrumentation
Test and measurement equipment for cellular base-station conformance testing (e.g. 3GPP TS36.141 reference sources) often uses 2.1 GHz power amplifiers delivering tens of watts into 50 ohm loads - exactly the MRF7S21110HR5's 33 W P1dB operating envelope. The internal matching and 17.3 dB gain let instrument designers drop the part into a reference-PA fixture with minimal external components, and the LDMOS die supports fast gating for packet-based test waveforms. Stable thermal performance and proven NXP reliability data underpin long calibration intervals in production ATE.
Recommended
Recommended Products Summary
Engineering reference data for MRF7S21110HR5 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MRF7S21110HSR5 | MRF7S18110HR5 | MRF7S19110HR5 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780 ceramic carrier | NI-780 - same | NI-780 - same | NI-780 - same |
| Frequency | 2.17 GHz | 2.17 GHz | 1.8 GHz (-17%) | 1.9 GHz (-12%) |
| Output Power | 33 W | 33 W | 33 W | 33 W |
| Gain | 17.3 dB | 17.3 dB | 17.3 dB | 17.0 dB |
| Test Voltage | 28 V | 28 V | 28 V | 28 V |
| Test Current | 1.1 A | 1.1 A | 1.1 A | 1.1 A |
| Drain-Source Breakdown | 65 V | 65 V | 65 V | 65 V |
Key Differentiators
- Specifically characterized for the 2110-2170 MHz UMTS/LTE Band 1 (vs MRF7S18110HR5)
- Internally matched at input and output for 50 ohm (vs Discrete RF power MOSFETs)
- Seventh-generation LDMOS process (vs Earlier MRF6S21110HR5)
Design Notes
Estimated: At 33 W RF output and 28 V drain bias, the LDMOS die dissipates on the order of 50-60 W DC internally (depending on PA efficiency), so a copper or copper-molybdenum heatsink with mounting torque of 1.5-2.0 N*m is mandatory. Apply a thin uniform thermal-interface material layer; voids larger than 5% of the package footprint will create localized hot spots above the 175 C junction limit.
Use a low-loss RF substrate (Rogers RO4003C or similar) with a continuous ground plane under the NI-780 flange. Place gate and drain bias feed networks with quarter-wave radial stubs or LC low-pass sections to prevent RF leakage into the DC supply rails. Maintain 50 ohm microstrip widths on input and output traces per the NXP reference design - the device is internally matched at the leads.
Apply gate-bias voltage before drain voltage during power-up sequencing, and remove drain first during shutdown, to prevent LDMOS parametric drift and gate-oxide stress. Source impedance at low frequencies must be shorted to ground to suppress parametric oscillation; do not rely on package parasitics alone - install local source-lead grounding shunts on the PCB.
Route the drain-bias feed through a ferrite bead plus bypass capacitor pair to suppress conducted RF noise on the 28 V supply rail. Install a shielded enclosure around the PA assembly if used in EMC-sensitive environments, and ensure that the heatsink-to-ground connection does not create unintended RF ground loops.
Compliance Information
RoHS, REACH, lead-free, halogen-free, and conflict-mineral status were not present in the verified web data excerpt. The NXP ceramic-package RF power line historically included both RoHS and non-RoHS variants - check the lot marking and CoC before placing RoHS-constrained orders.
