MRFE6VP6300HSR3 - 300W 50V RF Power MOSFET NI-780S-4L | NXP
MPN: MRFE6VP6300HSR3 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $145 | $145.00 |
| 10 | $132 | $1,320.00 |
| 50 | $120 | $6,000.00 |
| 100 | $108.5 | $10,850.00 |
| 250 | $98.75 | $24,687.50 |
MRFE6VP6300HSR3 Overview
A RF power MOSFET is a specialized lateral field-effect transistor optimized for high-frequency, high-power amplification. It sits within the RF semiconductor taxonomy: RF power MOSFET -> power MOSFET -> discrete MOSFET -> semiconductor. The lateral structure differs from vertical DMOS by offering lower feedback capacitance and higher breakdown ruggedness, which is essential when the output matching network can briefly reflect high VSWR during antenna faults, antenna tuning, or plasma-generator load transients. Compared to bipolar RF transistors, lateral MOSFETs provide higher gain, simpler biasing (gate voltage rather than base current), and superior thermal-cycling endurance.
Key features include 300 W CW and 300 W pulsed output (20% duty, 100 us), high ruggedness for laser/plasma exciters, unmatched wide-band input/output for 1.8-600 MHz use, and an integrated electrostatic-discharge protection network on the gate. The device is rated to a maximum drain-source voltage of 50 V and uses enhancement-mode N-channel construction, meaning it is normally off and requires a positive gate threshold to conduct.
Architecturally, the MRFE6VP6300HSR3 uses NXP's later-generation HV6 lateral RF MOSFET process, which combines gold metallization for bond-wire reliability, a ceramic NI-780S-4L flange for low thermal resistance, and a common-source 2-element configuration that lets designers build push-pull or paralleled stages without external balancing networks. The drain lead is brought out through the package body for low-inductance grounding.
Typical applications include VHF/UHF broadcast transmitters, industrial RF generators for laser and plasma excitation, FM/VHF land-mobile base stations, and aerospace HF/VHF communication amplifiers. The 65:1 VSWR ruggedness margin is the defining advantage for plasma and CO2-laser drivers where load reflections are normal rather than exceptional.
When designing with this part, gate bias sequencing matters: the device is enhancement-mode, so the gate must reach threshold (typically +2 V) before drain voltage is applied to avoid thermal runaway. Designers must also provide adequate heatsinking because 300 W CW output translates to roughly 150 W of dissipation at typical efficiencies of 50-60%, demanding a forced-air or liquid-cooled cold plate for continuous duty.
This page consolidates distributor pricing, parametric drop-in alternatives, and practical design considerations that go beyond the manufacturer datasheet, including a parametric proximity comparison versus related NXP HV6 series parts.
Drop-in alternatives for MRFE6VP6300HSR3 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MRFE6VP6300HSR5
✅ Drop-In📋 Reference alternative (not in catalog)
MRFE6VP6300HR3
✅ Drop-In📋 Reference alternative (not in catalog)
MRFE6VP6300HR5
✅ Drop-In📋 Reference alternative (not in catalog)
MRFE6VP6300HS
✅ Drop-In📋 Reference alternative (not in catalog)
MRFE6VP6300H
✅ Drop-In📋 Reference alternative (not in catalog)
MRFE6VP6300HSR3 Maximum Ratings & Electrical Characteristics
| Manufacturer | NXP Semiconductors |
| Transistor Type | N-Channel Lateral MOSFET |
| Configuration | Common Source, 2 Elements |
| Operating Frequency | 1.8 MHz to 600 MHz |
| Drain-Source Voltage (Vdss) | 50 V |
| Continuous Output Power | 300 W CW |
| Pulsed Output Power | 300 W (20% duty, 100 us pulse) |
| Power Gain | 26.5 dB at 230 MHz |
| Load Mismatch Tolerance | 65:1 VSWR at 50 V, 230 MHz, all phase angles |
| Test Conditions (Gain) | 100 mA Idq, 50 V |
| Mode of Operation | Enhancement-mode (normally off) |
| Package | NI-780S-4L (AC4 ceramic) |
| Mounting Type | Surface Mount / flange mount |
| Number of Terminals | 4 |
| JESD-30 Code | R-CDFP-F4 |
MRFE6VP6300HSR3 Pin Configuration
| Pin 1 | DRAIN — Drain (RF output), connected to 50 V supply via matching network |
| Pin 2 | GATE — Gate (RF input / DC bias), enhancement-mode N-channel, requires positive Vgs |
| Pin 3 | SOURCE — Source (RF/DC ground return) |
| Pin 4 | DRAIN — Drain (second drain bond for low-inductance high-current path) |
DC Safe Operating Area - MRFE6VP6300HSR3
Typical Applications
MRFE6VP6300HSR3 is suitable for 6 applications: VHF/UHF Broadcast Transmitter, CO2 Laser Exciter RF Generator, Plasma Generator / Industrial RF Source, VHF Land-Mobile Base Station, Aerospace HF/VHF Communication Amplifier, Industrial RF Heating / Drying.
VHF/UHF Broadcast Transmitter
The MRFE6VP6300HSR3 delivers 300 W CW across 1.8-600 MHz from a 50 V rail, making it well suited as the final RF amplifier stage in analog and digital VHF broadcast transmitters (Band I/II FM and VHF TV). Its 26.5 dB power gain at 230 MHz means a single device can reach full output power from a milliwatt-class exciter, eliminating intermediate driver stages. The unmatched broadband input/output allows the same amplifier hardware to be retuned for different broadcast channels by swapping only the output matching network, simplifying multi-frequency transmitter designs.
Recommended
CO2 Laser Exciter RF Generator
The MRFE6VP6300HSR3 is rated for high-VSWR operation up to 65:1 at 50 V / 230 MHz across all phase angles, which is the operating regime of an RF-excited CO2 laser plasma tube. The unmatched device accepts the reflected power from the plasma load without destruction, delivering up to 300 W CW into the gas discharge. Operating frequencies of 13.56 MHz, 27.12 MHz, and 81.36 MHz (ISM bands) all fall inside the device's 1.8-600 MHz range, allowing one amplifier platform to serve multiple industrial laser tools.
Recommended
Plasma Generator / Industrial RF Source
Industrial plasma generators for semiconductor etch, thin-film deposition, and surface treatment require RF amplifiers that survive severe load transients as the plasma ignites and extinguishes. The MRFE6VP6300HSR3's 65:1 VSWR tolerance directly addresses this - reflected power at plasma ignition is the normal operating condition, not a fault. The 300 W CW capability at 50 V supports mid-power 13.56 MHz plasma tools used in production lines, and the ceramic NI-780S-4L package bolts directly to a water-cooled cold plate for continuous-duty operation.
Recommended
VHF Land-Mobile Base Station
Land-mobile radio base stations operating in the 136-174 MHz and 380-512 MHz bands benefit from the MRFE6VP6300HSR3's broadband capability, allowing a single amplifier PCB to cover multiple band segments with only matching-network swaps. The 300 W output supports high-power repeater and base-station installations, while the 50 V supply rail aligns with standard telecom -48 V backplane power (boosted and regulated). The lateral MOSFET's high gain (26.5 dB at 230 MHz) reduces the bill of materials by eliminating an intermediate PA stage.
Recommended
Aerospace HF/VHF Communication Amplifier
Aerospace HF (2-30 MHz) and VHF (30-300 MHz) communication amplifiers require broadband RF power devices with high reliability under load mismatch. The MRFE6VP6300HSR3 covers the entire HF through low-VHF spectrum and is rated for 65:1 VSWR - well beyond the 3:1 or 5:1 typically seen on airborne antenna systems. The ceramic NI-780S-4L package meets aerospace mechanical-shock and vibration requirements, and the gold-metallized die supports the thermal-cycling profile of avionics bay environments.
Recommended
Industrial RF Heating / Drying
Industrial RF heating systems operating at 13.56 MHz, 27.12 MHz, or 40.68 MHz for wood drying, plastic welding, and food processing require amplifiers capable of driving variable reactive loads. The MRFE6VP6300HSR3's 300 W CW capability and 65:1 VSWR tolerance handle the rapidly changing load impedance of dielectric heating without device damage. The unmatched broadband design lets one amplifier platform be reconfigured across multiple ISM-band heating applications by changing only the output matching network.
Recommended
Recommended Products Summary
Engineering reference data for MRFE6VP6300HSR3 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MRFE6VP6300HSR5 | MRFE6VP6300HR3 | MRFE6VP6300HR5 | MRFE6VP6300HS | MRFE6VP6300H |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S-4L | NI-780S-4L - same | NI-780S-4L - same | NI-780S-4L - same | NI-780S-4L - same | NI-780S-4L - same |
| Output Power (CW) | 300 W | 300 W | 300 W | 300 W | 300 W | 300 W |
| Drain-Source Voltage | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| Power Gain at 230 MHz | 26.5 dB | 26.5 dB | 26.5 dB | 26.5 dB | 26.5 dB | 26.5 dB |
| VSWR Tolerance | 65:1 at 50 V, 230 MHz | 65:1 at 50 V, 230 MHz | 65:1 at 50 V, 230 MHz (standard ESD) | 65:1 at 50 V, 230 MHz (standard ESD) | 65:1 at 50 V, 230 MHz | 65:1 at 50 V, 230 MHz (standard ESD) |
| Enhanced Gate ESD ('S' suffix) | Yes | Yes | No | No | Yes | No |
| Silicon Revision | R3 | R5 (latest) | R3 | R5 (latest) | Original (no revision letter) | Original (no revision letter) |
| Packaging Format | Tape & Reel (R3 suffix) | Tape & Reel (R5) | Tape & Reel | Tape & Reel | Bulk tray (no R suffix) | Bulk tray |
Key Differentiators
- 65:1 VSWR tolerance at 50 V across all phase angles (vs MRFE6VP6300HR3 (non-'S' variant))
- Single-stage 300 W CW at 1.8-600 MHz (vs Discrete bipolar RF transistor alternatives in same band)
- Latest NXP HV6 process with gold metallization (vs Older MRF series RF MOSFETs (e.g., MRF6VP41KH))
Design Notes
At 300 W CW output with typical PAE of 50-60%, the MRFE6VP6300HSR3 dissipates approximately 150-200 W into the NI-780S-4L ceramic flange. The package thermal resistance requires direct mounting to a water-cooled cold plate or a high-airflow forced-air heatsink; passive heatsinking alone is insufficient for continuous duty. Estimated: with 150 W dissipation and an assumed thermal resistance of 0.1 C/W to cold plate, junction temperature rise is 15 C above coolant - confirm with the NXP application note thermal model. Always apply thermal compound and verify torque on mounting screws per datasheet mechanical specifications.
The unmatched input and output of the MRFE6VP6300HSR3 require low-inductance grounding - the source lead must be bonded directly to a continuous ground plane with multiple vias placed within 2 mm of the package source terminal. The gate bias feed must include a 10-100 ohm series resistor close to the gate pin to suppress parasitic oscillation, and the drain bias feed must use a broadband RF choke (typically a stack of ferrite beads or a hand-wound coil with Q > 100 at the operating frequency). Keep gate and drain traces separated by at least 5 mm to minimize feedback capacitance that could trigger VHF parasitic oscillation.
Sequence the gate voltage before applying drain voltage to avoid thermal runaway - the device is enhancement-mode (normally off at Vgs=0). A typical start-up sequence brings Vgs to +2.5 V (just above threshold) first, then ramps Vds from 0 to 50 V over 10 ms. Add a gate-source Zener diode (typically 12-15 V) to clamp transient overvoltage on the gate during drain-voltage transients. Per NXP datasheet guidance, the absolute maximum Vgs rating is +/-20 V; sustained gate voltages above this will destroy the gate oxide.
Do not assume the device is internally matched - external LC matching networks are mandatory for both input and output. Operating without proper matching can result in the device seeing impedances that exceed its breakdown rating even at low input power. Also avoid using the MRFE6VP6300HR3 (non-'S' variant) in plasma-generator applications where high gate static discharge events are common; the 'S' suffix indicates the enhanced ESD network that protects the gate from handling-induced damage during manufacturing and field service.
Compliance Information
RoHS/REACH/halogen-free status not present in the verified web data provided - marked unknown. AEC-Q100 is not applicable: this is an industrial/aerospace RF power MOSFET, not an automotive-qualified part per the NXP datasheet family classification.
