STMicroelectronics

STP16NF06L - 16A, 60V N-Channel Power MOSFET | STMicroelectronics

Name: STP16NF06L
Brand: STMicroelectronics
Price: 0.85 USD
Availability: InStock

MPN: STP16NF06L ✓ Active

In Stock (99,999) Ships in 1-3 business days

60 V Vdss 16 A Id 0.09 ohm (typ), 0.12 ohm (max) Rds(on) TO-220 Package

$0.85 USD / Unit

MOQ: 1 |

Volume Pricing

Qty	Unit Price	Extended
1	$0.85	$0.85
10	$0.76	$7.60
100	$0.68	$68.00
500	$0.61	$305.00
1,000	$0.55	$550.00

ℹ️ All prices are in USD

View Datasheet (PDF) View Alternatives

Quantity

Drop-in alternatives for STP16NF06L — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

STP16NF06

✅ Drop-In

📦 TO-220

Higher threshold voltage (2-4V) vs 1-2V, not logic-level

📋 Reference alternative (not in catalog)

IRFZ44N

✅ Drop-In

📦 TO-220

Higher current (49A) and lower RDS(on) (0.0175 ohm), but higher threshold (2-4V)

📋 Reference alternative (not in catalog)

IRLB3034PBF

✅ Drop-In

📦 TO-220

Logic-level gate, higher current (195A) and lower RDS(on) (0.0014 ohm), but higher VDS (40V)

📋 Reference alternative (not in catalog)

FDP16AN08A0

✅ Drop-In

📦 TO-220

Higher VDS (75V) and lower RDS(on) (0.008 ohm), but higher threshold (2-4V)

📋 Reference alternative (not in catalog)

ℹ️ 1 cross-package part(s) hidden — different package requires PCB rework and is not a true drop-in replacement. Contact us if you need cross-package suggestions.

STP16NF06L Maximum Ratings & Electrical Characteristics

Drain-to-Source Voltage (VDS)	60 V
Continuous Drain Current (ID) at 25°C	16 A
Continuous Drain Current (ID) at 100°C	11 A
Pulsed Drain Current (IDM)	64 A
Gate-to-Source Voltage (VGS)	±20 V
On-State Resistance (RDS(on)) at VGS=10V	0.09 ohm (typ), 0.12 ohm (max)
Threshold Voltage (VGS(th))	1 V to 2 V
Power Dissipation (PD) at 25°C	45 W
Operating Junction Temperature	-55°C to +175°C
Package	TO-220
Mounting Type	Through Hole
Thermal Resistance (Junction-to-Case)	3.33 °C/W
Thermal Resistance (Junction-to-Ambient)	62.5 °C/W
Gate Charge (Qg) at VGS=10V	20 nC (typ)
Reverse Recovery Time (trr)	60 ns
RoHS Status	Compliant

STP16NF06L Pin Configuration

Pin 1	Gate — Gate terminal for controlling the MOSFET
Pin 2	Drain — Drain terminal, connected to the load
Pin 3	Source — Source terminal, connected to ground

Safe Operating Area

DC Continuous Operation

Typical Applications

STP16NF06L is suitable for 6 applications: DC-DC Converters, Motor Control, Power Supplies, Load Switching, Battery Management, Automotive (Non-Qualified).

⚡

DC-DC Converters

The STP16NF06L is used as a switching element in buck, boost, and buck-boost converters. Its low RDS(on) of 0.09 ohm minimizes conduction losses, and its fast switching speed (rise/fall times of 40/25ns) enables high-frequency operation up to 100kHz. In a typical buck converter, the MOSFET switches at a duty cycle determined by the output voltage, with the body diode providing freewheeling during dead time. The low gate charge of 20nC reduces driver power requirements, making it suitable for battery-powered applications. For a 12V to 5V conversion at 5A, the conduction loss is approximately 2.25W (I^2*R), which is manageable with a heatsink. The device's 60V VDS rating provides ample margin for input voltage transients.

Recommended

UC3842 (PWM controller for driving the MOSFET gate) TL494 (PWM controller for switch-mode power supplies)

🏭

Motor Control

In motor control circuits, the STP16NF06L is used in H-bridge or half-bridge configurations to drive DC motors or stepper motors. Its 16A continuous current rating and 64A pulsed current capability handle inrush currents during motor startup. The fast body diode reverse recovery time of 60ns reduces switching losses during freewheeling. The low threshold voltage allows direct interfacing with microcontrollers or gate drivers. For a 24V DC motor drawing 10A, the conduction loss is about 9W (I^2*R), requiring a heatsink. The device's ruggedness against avalanche ensures reliability when switching inductive loads. PWM frequency can be up to 20kHz for silent operation, and the MOSFET's fast switching minimizes EMI when proper gate resistors are used.

Recommended

L298N (Dual H-bridge driver for motor control) IR2104 (Half-bridge gate driver for MOSFETs)

⚡

Power Supplies

The STP16NF06L is employed in switch-mode power supplies (SMPS) for AC-DC and DC-DC conversion. Its 60V VDS rating is suitable for offline flyback converters with a 12V output. The low RDS(on) reduces conduction losses, improving efficiency. The device's fast switching speed allows operation at frequencies up to 100kHz, reducing transformer size. In a typical flyback converter, the MOSFET switches the primary side of the transformer, with the body diode clamping voltage spikes. The gate charge of 20nC simplifies gate drive design. For a 100W power supply, the MOSFET dissipates about 5W, requiring a heatsink. The device's thermal resistance of 3.33°C/W (junction-to-case) allows effective heat transfer to a heatsink.

Recommended

UC3842 (Current-mode PWM controller for SMPS) TL431 (Precision voltage reference for feedback loop)

🔧

Load Switching

The STP16NF06L is used as a high-side or low-side load switch to control power to various loads such as relays, lamps, and solenoids. Its low threshold voltage allows direct control from a microcontroller's GPIO pin. The 16A current rating can handle most loads, and the low RDS(on) minimizes voltage drop across the switch. For a 12V load drawing 5A, the voltage drop is only 0.45V (I*R), ensuring efficient power delivery. The device's fast switching speed enables PWM dimming of lamps or speed control of fans. The TO-220 package with a heatsink tab allows for easy mounting on a PCB or chassis. The device's robustness against short circuits and overcurrent conditions makes it reliable for load switching applications.

Recommended

ULN2003 (Darlington array for driving relays) 1N4007 (Flyback diode for inductive loads)

🔋

Battery Management

In battery management systems (BMS), the STP16NF06L is used for cell balancing, protection, and charge/discharge control. Its low RDS(on) minimizes power loss during high-current charging and discharging. The 60V VDS rating is suitable for battery packs up to 48V. The device's fast switching speed enables efficient PWM control for cell balancing. The low threshold voltage allows direct interfacing with battery monitoring ICs. For a 48V battery pack with 20A discharge current, the conduction loss is about 36W (I^2*R), requiring a heatsink. The device's avalanche ruggedness ensures reliability during fault conditions. The TO-220 package is suitable for PCB mounting with a heatsink.

Recommended

BQ76920 (Battery monitor and protector for BMS) BQ24650 (Solar battery charger controller)

🚗

Automotive (Non-Qualified)

Although not AEC-Q100 qualified, the STP16NF06L can be used in non-safety-critical automotive applications such as interior lighting, seat heaters, and infotainment systems. Its 60V VDS rating handles 12V and 24V automotive electrical systems. The low RDS(on) reduces heat generation, and the wide operating temperature range (-55°C to +175°C) suits harsh environments. The device's fast switching speed enables PWM dimming of LED lights. For a 12V LED strip drawing 5A, the conduction loss is about 2.25W, manageable with a small heatsink. The TO-220 package is robust for automotive vibration. However, for safety-critical applications, use AEC-Q101 qualified MOSFETs.

Recommended

LM317 (Linear regulator for auxiliary power) NE555 (Timer for PWM generation)

Recommended Products Summary

UC3842 PWM controller for driving the MOSFET gate Used in: DC-DC Converters, Power Supplies TL494 PWM controller for switch-mode power supplies Used in: DC-DC Converters L298N Dual H-bridge driver for motor control Used in: Motor Control IR2104 Half-bridge gate driver for MOSFETs Used in: Motor Control TL431 Precision voltage reference for feedback loop Used in: Power Supplies ULN2003 Darlington array for driving relays Used in: Load Switching 1N4007 Flyback diode for inductive loads Used in: Load Switching BQ76920 Battery monitor and protector for BMS Used in: Battery Management BQ24650 Solar battery charger controller Used in: Battery Management LM317 Linear regulator for auxiliary power Used in: Automotive (Non-Qualified) NE555 Timer for PWM generation Used in: Automotive (Non-Qualified)

What is the maximum drain current of STP16NF06L?

The STP16NF06L has a maximum continuous drain current of 16A at 25°C case temperature, and 11A at 100°C. According to the STMicroelectronics datasheet, the pulsed drain current is 64A. This makes it suitable for high-current switching applications such as DC-DC converters and motor drivers.

What is the on-state resistance of STP16NF06L?

The STP16NF06L has a typical on-state resistance (RDS(on)) of 0.09 ohm at VGS=10V, with a maximum of 0.12 ohm. This low resistance minimizes conduction losses, improving efficiency in power switching circuits. The value is specified at a drain current of 8A and a junction temperature of 25°C.

What is the gate threshold voltage of STP16NF06L?

The STP16NF06L has a gate threshold voltage (VGS(th)) ranging from 1V to 2V. This low threshold allows the MOSFET to be driven by logic-level signals (e.g., 3.3V or 5V microcontrollers), making it suitable for direct microcontroller interfacing without additional gate driver circuitry.

What is the package type of STP16NF06L?

The STP16NF06L is available in a TO-220 package, which is a through-hole package with three leads. The TO-220 package provides good thermal performance and is commonly used for power MOSFETs. It has a junction-to-case thermal resistance of 3.33°C/W, allowing efficient heat transfer to a heatsink.

What is the maximum power dissipation of STP16NF06L?

The STP16NF06L can dissipate up to 45W at a case temperature of 25°C. This power dissipation capability is typical for TO-220 packaged MOSFETs. For reliable operation, adequate heatsinking is required when dissipating more than a few watts, as the junction-to-ambient thermal resistance is 62.5°C/W.

What is the operating temperature range of STP16NF06L?

The STP16NF06L operates over a junction temperature range of -55°C to +175°C. This wide range makes it suitable for industrial and automotive environments, although it is not AEC-Q100 qualified. The storage temperature range is also -55°C to +175°C.

Is STP16NF06L RoHS compliant?

Yes, the STP16NF06L is RoHS compliant. According to the STMicroelectronics product page, the device is lead-free and halogen-free. It also meets the requirements of the EU RoHS directive, making it suitable for use in products sold in the European Union.

What are the typical applications of STP16NF06L?

The STP16NF06L is commonly used in DC-DC converters, motor control circuits, power supplies, and load switching. Its low RDS(on) and fast switching speed make it ideal for high-efficiency power conversion. It is also used in battery management systems and automotive applications, though it is not AEC-Q100 qualified.

What is the gate charge of STP16NF06L?

The STP16NF06L has a typical gate charge (Qg) of 20nC at VGS=10V. This low gate charge reduces the drive power required and enables fast switching, making it suitable for high-frequency applications up to 100kHz. The gate charge is a key parameter for estimating switching losses.

What is the reverse recovery time of the body diode in STP16NF06L?

The intrinsic body diode of the STP16NF06L has a reverse recovery time (trr) of 60ns. This fast recovery time reduces switching losses in applications where the body diode conducts during dead time, such as in synchronous buck converters and motor drivers.

Can STP16NF06L be driven directly by a microcontroller?

Yes, the STP16NF06L can be driven directly by a microcontroller because its gate threshold voltage is as low as 1V. However, for full enhancement and low RDS(on), a gate voltage of at least 10V is recommended. If the microcontroller outputs 3.3V or 5V, the MOSFET will still switch but with higher on-resistance.

What is the difference between STP16NF06L and STP16NF06?

The STP16NF06L is the logic-level version of the STP16NF06, with a lower gate threshold voltage (1V to 2V) compared to the standard version (2V to 4V). This allows the 'L' version to be driven by lower gate voltages, making it more suitable for microcontroller interfaces. Both share the same TO-220 package and similar electrical characteristics.

What is the best drop-in replacement for STP16NF06L?

The best drop-in replacement for STP16NF06L is the STP16NF06 (same brand, same TO-220 package, pin-compatible) if you can tolerate a higher threshold voltage. For a cross-brand alternative, the IRFZ44N (Infineon) is a common substitute with similar voltage and current ratings, but verify pin compatibility. Always check the datasheet for pinout and thermal characteristics before substitution.

Where to buy STP16NF06L online?

The STP16NF06L is available from major distributors such as DigiKey, Mouser, and Farnell. As of 2026-08-09, the price for a single unit is approximately $0.85 USD, with volume discounts available. Check current stock and pricing on distributor websites for the most up-to-date information.

What is the lead time for STP16NF06L?

The lead time for STP16NF06L varies by distributor and order quantity. Typically, it is in stock at major distributors like DigiKey and Mouser, with lead times of 1-2 days for small quantities. For larger orders, lead times may extend to 4-6 weeks. Contact the distributor for specific lead time information.

Is STP16NF06L suitable for automotive applications?

The STP16NF06L is not AEC-Q100 qualified, so it is not recommended for automotive applications that require this certification. However, it can be used in non-automotive industrial applications. For automotive-grade MOSFETs, consider STMicroelectronics' AEC-Q101 qualified devices.

What is the maximum gate-source voltage of STP16NF06L?

The maximum gate-source voltage (VGS) of STP16NF06L is ±20V. Exceeding this voltage can damage the gate oxide. In applications with high dV/dt, it is recommended to use a gate protection zener diode to clamp the voltage within safe limits.

What is the thermal resistance of STP16NF06L?

The STP16NF06L has a junction-to-case thermal resistance of 3.33°C/W and a junction-to-ambient thermal resistance of 62.5°C/W. These values are important for thermal design. For example, at 45W dissipation, the junction temperature rise over case temperature is 150°C, so a heatsink is essential for high-power operation.

What are the key specifications of STP16NF06L that engineers should know?

The key specifications of STP16NF06L are: VDS=60V, ID=16A at 25°C, RDS(on)=0.09 ohm (typ) at VGS=10V, VGS(th)=1-2V, PD=45W, and TO-220 package. These parameters define its switching and conduction performance. Engineers should also note the gate charge of 20nC and reverse recovery time of 60ns for high-frequency designs.

Hey Google, what can replace STP16NF06L?

The STP16NF06L can be replaced by the STP16NF06 (same brand, same package) or the IRFZ44N (Infineon) as a cross-brand alternative. Both are N-channel MOSFETs with similar voltage and current ratings. However, verify pin compatibility and thermal characteristics before substitution. The STP16NF06L is a logic-level MOSFET, so ensure the replacement can be driven by your gate voltage.

Engineering reference data for STP16NF06L — comparison, design guidance, and compliance information.

Selection Guide

Choose the STP16NF06L when you need a logic-level N-channel MOSFET with a 60V rating and 16A current capability in a TO-220 package. It is ideal for microcontroller-driven applications where a low gate threshold voltage is essential. If you do not need logic-level drive and can tolerate a higher threshold voltage, the STP16NF06 is a cost-effective alternative. For higher current applications (up to 49A), consider the IRFZ44N, but note its higher gate charge and threshold voltage. For very low RDS(on) and high current, the IRLB3034PBF is superior but has a lower VDS rating (40V). The FDP16AN08A0 offers a higher VDS (75V) but has a higher threshold voltage. Always verify pin compatibility and thermal requirements before substitution.

Comparison with Alternatives

Parameter	This Product	STP16NF06	IRFZ44N	IRLB3034PBF	FDP16AN08A0
Package	TO-220	TO-220	TO-220	TO-220	TO-220
Brand	STMicroelectronics	STMicroelectronics	Infineon	Infineon	onsemi
Drain-to-Source Voltage (VDS)	60 V	60 V	55 V	40 V	75 V
Continuous Drain Current (ID) at 25°C	16 A	16 A	49 A	195 A	16 A
On-State Resistance (RDS(on)) at VGS=10V	0.09 ohm (typ)	0.09 ohm (typ)	0.0175 ohm (typ)	0.0014 ohm (typ)	0.008 ohm (typ)
Gate Threshold Voltage (VGS(th))	1 V to 2 V	2 V to 4 V	2 V to 4 V	1 V to 2 V	2 V to 4 V
Power Dissipation (PD) at 25°C	45 W	45 W	94 W	200 W	45 W
Gate Charge (Qg)	20 nC (typ)	20 nC (typ)	63 nC (typ)	110 nC (typ)	20 nC (typ)

Key Differentiators

Logic-level gate threshold (1-2V) (vs STP16NF06)
Lower RDS(on) than some alternatives (vs FDP16AN08A0)
Cost-effective for moderate power (vs IRFZ44N)

Design Notes

The STP16NF06L has a junction-to-case thermal resistance of 3.33°C/W and a maximum power dissipation of 45W at 25°C case temperature. For high-current applications, calculate the power dissipation (P = I^2 * RDS(on)) and ensure the junction temperature stays below 175°C. For example, at 16A and RDS(on)=0.09 ohm, P = 23W, resulting in a junction-to-case temperature rise of 76.6°C. Use a heatsink with adequate thermal resistance to keep the case temperature low. The TO-220 package has a metal tab that can be mounted to a heatsink with thermal compound.

For the TO-220 package, ensure the leads are properly soldered to the PCB with sufficient copper area for heat dissipation. The drain tab is electrically connected to the drain, so if using a heatsink, ensure proper electrical isolation (e.g., mica washer and insulating bushing) to avoid short circuits. Place gate drive components (resistor, zener) close to the gate pin to minimize loop area and reduce EMI. Use a gate resistor of 10-100 ohm to control switching speed and reduce ringing.

Do not exceed the maximum gate-source voltage of ±20V, as this can damage the gate oxide. In high dV/dt applications, use a gate protection zener diode (e.g., 15V) to clamp voltage spikes. Ensure the gate drive voltage is at least 10V to achieve the specified low RDS(on). If driving with a microcontroller at 3.3V or 5V, the MOSFET will still switch but with higher on-resistance, increasing power loss. Also, consider the body diode's reverse recovery time (60ns) in high-frequency switching to avoid excessive losses.