STP12N60M2 - 12A, 600V N-Channel Power MOSFET | STMicroelectronics
MPN: STP12N60M2 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.65 | $16.50 |
| 100 | $1.45 | $145.00 |
| 500 | $1.3 | $650.00 |
| 1,000 | $1.2 | $1,200.00 |
Drop-in alternatives for STP12N60M2 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
STP12N60M2-EP
β Drop-Inπ Reference alternative (not in catalog)
STP12N60M2-1
β Drop-Inπ Reference alternative (not in catalog)
STP12N60M2-2
β Drop-Inπ Reference alternative (not in catalog)
IPP60R099CP
β Drop-Inπ Reference alternative (not in catalog)
FCP12N60
β Drop-Inπ Reference alternative (not in catalog)
STP12N60M2 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 12 A |
| Continuous Drain Current (ID) at 100Β°C | 7.6 A |
| Pulsed Drain Current (IDM) | 48 A |
| Gate-Source Voltage (VGS) | Β±25 V |
| On-Resistance (RDS(on)) | 0.38 Ξ© typical |
| Total Gate Charge (Qg) | 30 nC |
| Input Capacitance (Ciss) | 1100 pF |
| Output Capacitance (Coss) | 90 pF |
| Reverse Transfer Capacitance (Crss) | 5 pF |
| Power Dissipation (PD) | 110 W |
| Operating Temperature Range | -55Β°C to +150Β°C |
| Package | TO-220 |
| Mounting Type | Through Hole |
| Avalanche Energy (EAS) | 450 mJ |
| RoHS Status | Compliant |
STP12N60M2 Pin Configuration
| Pin 1 | Gate β Gate terminal for controlling the MOSFET |
| Pin 2 | Drain β Drain terminal, connected to the load |
| Pin 3 | Source β Source terminal, connected to ground |
Safe Operating Area
Typical Applications
STP12N60M2 is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Motor Control, Solar Inverters, Battery Chargers.
Switch-Mode Power Supplies (SMPS)
The STP12N60M2 is ideal for the primary switch in flyback and forward converters. Its 600V breakdown voltage handles the high voltage stress, while the low on-resistance (0.38Ξ©) minimizes conduction losses. The low gate charge (30nC) enables fast switching, reducing switching losses and improving efficiency. In a typical 100W SMPS, the MOSFET operates at 100kHz, and the low Qg reduces gate drive power. The TO-220 package allows easy heatsinking, ensuring reliable operation at high power levels.
Recommended
Power Factor Correction (PFC)
In boost PFC circuits, the STP12N60M2 handles high voltage and current with low losses. Its high dv/dt capability ensures robust performance in hard-switching conditions. The low RDS(on) reduces conduction losses, which is critical for meeting efficiency standards like 80 PLUS. The device's avalanche ruggedness (450mJ) provides reliability during transient overvoltage events. In a 300W PFC stage, the MOSFET operates at 65kHz, and the low gate charge simplifies the gate drive design.
Recommended
LED Lighting Drivers
The STP12N60M2 is suitable for LED drivers requiring high voltage and current switching. Its 600V rating allows direct connection to rectified mains (up to 400V DC). The low on-resistance minimizes power dissipation, reducing the need for large heatsinks. The fast switching capability supports high-frequency operation, enabling compact transformer designs. In a 50W LED driver, the MOSFET switches at 100kHz, and the low Qg reduces switching losses, improving overall efficiency.
Recommended
Motor Control
In motor control applications, the STP12N60M2 is used in the inverter stage of variable frequency drives. Its high voltage rating (600V) is suitable for 3-phase AC motors. The low RDS(on) reduces conduction losses, improving motor drive efficiency. The fast body diode with low reverse recovery charge enables reliable operation in bridge topologies. The device's thermal performance allows operation at high ambient temperatures, making it suitable for industrial motor drives.
Recommended
Solar Inverters
The STP12N60M2 is used in the DC-DC boost stage of solar inverters. Its 600V rating handles the high voltage from solar panels (up to 450V). The low on-resistance minimizes losses, improving the overall efficiency of the inverter. The device's avalanche ruggedness ensures reliability during grid transients. In a 1kW solar inverter, the MOSFET operates at 50kHz, and the low gate charge simplifies the gate drive design.
Recommended
Battery Chargers
The STP12N60M2 is used in the power stage of battery chargers for electric vehicles and industrial equipment. Its high voltage rating (600V) allows direct connection to the AC mains. The low RDS(on) reduces power dissipation, improving charging efficiency. The fast switching capability supports high-frequency operation, reducing the size of magnetic components. In a 500W charger, the MOSFET operates at 100kHz, and the low Qg reduces switching losses.
Recommended
Recommended Products Summary
Engineering reference data for STP12N60M2 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STP12N60M2-EP | IPP60R099CP | FCP12N60 |
|---|---|---|---|---|
| Package | TO-220 | TO-220 | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 12 A | 12 A | 11 A | 12 A |
| On-Resistance (RDS(on)) | 0.38 Ξ© | 0.38 Ξ© | 0.099 Ξ© | 0.32 Ξ© |
| Total Gate Charge (Qg) | 30 nC | 30 nC | 60 nC | 45 nC |
| Input Capacitance (Ciss) | 1100 pF | 1100 pF | 1800 pF | 1500 pF |
| Power Dissipation (PD) | 110 W | 110 W | 150 W | 120 W |
Key Differentiators
- Low on-resistance (0.38Ξ©) for reduced conduction losses (vs IPP60R099CP)
- Low gate charge (30nC) for fast switching (vs FCP12N60)
- High avalanche energy (450mJ) for ruggedness (vs IPP60R099CP)
Design Notes
The TO-220 package has a junction-to-case thermal resistance of 1.36Β°C/W. For a power dissipation of 50W, the case temperature rise is 68Β°C. Use a heatsink with a thermal resistance of 1Β°C/W or better to keep the junction temperature below 150Β°C. Ensure proper thermal interface material (TIM) is applied between the device and heatsink.
For through-hole mounting, ensure the leads are soldered with adequate solder fillets. The TO-220 package has a tab that is electrically connected to the drain; if using a heatsink, ensure it is electrically isolated or the system is designed to handle the drain potential. Place gate drive components close to the gate pin to minimize parasitic inductance.
Do not exceed the maximum gate-source voltage of Β±25V. Use a gate resistor (e.g., 10Ξ©) to dampen ringing. Ensure the gate drive voltage is at least 10V to fully enhance the channel and achieve the specified RDS(on). Avoid operating in the linear region for extended periods, as this can cause excessive power dissipation.
Compliance Information
RoHS compliant per STMicroelectronics product page. Not AEC-Q100 qualified; for automotive, consider STP12N60M2-EP or other automotive-grade parts.