STP20N60M2 - 600V 20A N-Channel Power MOSFET | STMicroelectronics
MPN: STP20N60M2 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.35 | $2.35 |
| 10 | $2.1 | $21.00 |
| 100 | $1.85 | $185.00 |
| 500 | $1.65 | $825.00 |
| 1,000 | $1.5 | $1,500.00 |
Drop-in alternatives for STP20N60M2 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
STP20N60M2-EP
β Drop-Inπ Reference alternative (not in catalog)
STP20N60M2-1
β Drop-Inπ Reference alternative (not in catalog)
STP20N60M2-2
β Drop-Inπ Reference alternative (not in catalog)
IPP60R099CP
β Drop-Inπ Reference alternative (not in catalog)
FCP20N60
β Drop-Inπ Reference alternative (not in catalog)
TK20N60X
β Drop-Inπ Reference alternative (not in catalog)
STP20N60M2 Maximum Ratings & Electrical Characteristics
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 20 A |
| Continuous Drain Current (ID) at 100Β°C | 12 A |
| Pulsed Drain Current (IDM) | 80 A |
| On-Resistance (RDS(on)) | 0.19 ohm typical, 0.23 ohm max |
| Gate-Source Voltage (VGS) | Β±25 V |
| Gate Threshold Voltage (VGS(th)) | 2 V to 4 V |
| Total Gate Charge (Qg) | 45 nC |
| Input Capacitance (Ciss) | 1900 pF |
| Output Capacitance (Coss) | 120 pF |
| Reverse Transfer Capacitance (Crss) | 5 pF |
| Avalanche Energy (EAS) | 400 mJ |
| Thermal Resistance (Junction-to-Case) | 1.67 Β°C/W |
| Thermal Resistance (Junction-to-Ambient) | 62.5 Β°C/W |
| Operating Temperature Range | -55Β°C to +150Β°C |
| Package | TO-220 |
| Mounting Type | Through Hole |
| RoHS Status | Compliant |
STP20N60M2 Pin Configuration
| Pin 1 | Gate β Gate drive input |
| Pin 2 | Drain β Drain connection |
| Pin 3 | Source β Source connection |
Safe Operating Area
Typical Applications
STP20N60M2 is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Motor Control, Solar Inverters, Welding Equipment.
Switch-Mode Power Supplies (SMPS)
The STP20N60M2 is ideal for SMPS due to its 600V breakdown voltage and low on-resistance. In a typical flyback converter, it switches at frequencies up to 100 kHz, with gate charge of 45nC reducing driver losses. Its avalanche rating of 400mJ ensures robustness during transformer leakage inductance spikes. Compared to IGBTs, the MOSFET offers faster switching and lower switching losses, improving efficiency. Designers must ensure proper gate drive and snubber circuits to minimize EMI.
Recommended
Power Factor Correction (PFC)
In PFC circuits, the STP20N60M2 operates in continuous conduction mode (CCM) at high frequency. Its low gate charge (45nC) enables switching at 100 kHz or higher, reducing the size of boost inductors. The low on-resistance (0.19 ohm) minimizes conduction losses, improving overall efficiency. The fast body diode reduces reverse recovery losses in the boost converter. For a 1kW PFC stage, the device dissipates approximately 20W at full load, requiring a heatsink. Its 600V rating provides margin for output voltages up to 400V.
Recommended
LED Lighting Drivers
The STP20N60M2 is used in LED drivers for high-power lighting, such as streetlights and industrial fixtures. Its 600V rating allows direct connection to rectified AC mains (up to 400V). The low on-resistance reduces heat generation, extending driver lifespan. In a typical buck converter, it switches at 65 kHz, with gate charge of 45nC enabling efficient driving. The device's avalanche capability handles inductive spikes from the LED string. For a 100W LED driver, the MOSFET dissipates about 10W, requiring a small heatsink.
Recommended
Motor Control
In motor control applications, the STP20N60M2 is used in the inverter stage of variable frequency drives (VFDs) for induction motors. Its 600V rating suits 230V AC motor drives. The low gate charge enables PWM frequencies up to 20 kHz, reducing audible noise. The fast body diode provides freewheeling current path, and the avalanche rating handles inductive spikes during commutation. For a 1kW motor drive, the device dissipates about 15W, requiring a heatsink. Its TO-220 package is easy to mount on a heatsink with a mica insulator.
Recommended
Solar Inverters
The STP20N60M2 is suitable for solar micro-inverters and string inverters. Its 600V rating handles the DC bus voltage from solar panels (up to 500V). The low on-resistance reduces conduction losses, improving conversion efficiency. In a typical boost converter, it switches at 50 kHz, with gate charge of 45nC. The device's avalanche capability ensures reliability during grid transients. For a 500W micro-inverter, the MOSFET dissipates about 8W, requiring a heatsink. Its TO-220 package is cost-effective for high-volume production.
Recommended
Welding Equipment
In inverter-based welding machines, the STP20N60M2 is used in the high-frequency inverter stage. Its 600V rating handles the rectified mains voltage, and the low gate charge enables switching at 50 kHz, reducing transformer size. The low on-resistance minimizes losses, improving duty cycle. The device's avalanche rating is critical for handling inductive spikes from the welding transformer. For a 200A welder, the MOSFET dissipates about 25W, requiring a forced-air heatsink. Its TO-220 package is rugged and reliable.
Recommended
Recommended Products Summary
Engineering reference data for STP20N60M2 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STP20N60M2-EP | IPP60R099CP | FCP20N60 |
|---|---|---|---|---|
| Package | TO-220 | TO-220 | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) | 20 A | 20 A | 20 A | 20 A |
| On-Resistance (RDS(on)) | 0.19 ohm | 0.19 ohm | 0.099 ohm | 0.19 ohm |
| Total Gate Charge (Qg) | 45 nC | 45 nC | 60 nC | 45 nC |
| Avalanche Energy (EAS) | 400 mJ | 500 mJ | 300 mJ | 400 mJ |
| Operating Temperature Range | -55Β°C to +150Β°C | -55Β°C to +150Β°C | -55Β°C to +150Β°C | -55Β°C to +150Β°C |
Key Differentiators
- Low on-resistance of 0.19 ohm (vs IPP60R099CP)
- High avalanche energy of 400 mJ (vs IPP60R099CP)
- Same-brand enhanced variant available (vs STP20N60M2-EP)
Design Notes
The STP20N60M2 has a junction-to-case thermal resistance of 1.67Β°C/W. For a 20A load at 10V drop, power dissipation is 200W, which is unrealistic without extreme cooling. In typical SMPS applications, dissipation is 10-20W, requiring a heatsink with thermal resistance below 5Β°C/W. Always calculate junction temperature: Tj = Ta + (Pd * (RthJC + RthCS + RthSA)). Ensure Tj stays below 150Β°C.
For TO-220, mount the device on a heatsink with thermal compound. Keep gate drive traces short and use a gate resistor (10-100 ohm) to reduce ringing. Place a 100nF ceramic capacitor close to the gate driver. For high-frequency operation, use a low-inductance layout for the drain and source connections to minimize parasitic inductance.
Do not exceed the maximum gate-source voltage of Β±25V. Use a zener diode or TVS for protection. Ensure the gate drive voltage is at least 10V to fully enhance the channel. Avoid operating in the linear region for extended periods, as this can cause thermal runaway. Always include a freewheeling diode for inductive loads.
Compliance Information
RoHS compliant per STMicroelectronics. Not AEC-Q100 qualified (not an automotive part).