MW7IC2220NBR1 vs MW7IC2240NBR1 Comparação

Comparação detalhada lado a lado de MW7IC2220NBR1 por NXP Semiconductors e MW7IC2240NBR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MW7IC2220NBR1 MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP

MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP

MW7IC2220NBR1 ✓ Ativo
NXP Semiconductors
MW7IC2240NBR1 MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 Obsolete

Comparação de especificações

Parâmetro MW7IC2220NBR1 MW7IC2240NBR1
Marca NXP Semiconductors NXP Semiconductors
Categoria RF Amplifiers RF Amplifiers
Status do ciclo de vida Ativo Obsolete
Status do estoque In Stock In Stock
Preço unitário (USD) $21,50 $29,00
Technology RF LDMOS (Laterally Diffused MOSFET) RF LDMOS (multi-stage integrated)
Função W-CDMA Wideband Integrated Power Amplifier —
Frequency Range 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) 2110 MHz to 2170 MHz (usable 2000-2200 MHz)
Operating Frequency (typical) 2167.5 MHz —
Average Output Power 2 W (33 dBm) —
Drain Supply Voltage (VDD) 28 V (24 V to 32 V operating range) —
Small-Signal Gain 31 dB (typical at 2.17 GHz) —
Quiescent Current Stage 1 (IDQ1) 80 mA 90 mA
Quiescent Current Stage 2 (IDQ2) 300 mA 420 mA
Package Type TO-272WB-16 (over-molded plastic) —
Input Matching On-chip (50 ohm nominal) —
Output Matching On-chip (50 ohm nominal) —
Characteristic Impedance 50 ohm —
Maximum Operating Temperature 150 C —
Tipo de montagem Surface Mount (flange/over-molded) Surface Mount
Modulation Support W-CDMA, TD-SCDMA, LTE, multi-carrier —
Test Signal Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB —
ACPR Measurement 3.84 MHz channel bandwidth at +/-5 MHz offset —
Modulation / RF Type — W-CDMA (also TD-SCDMA, LTE)
Output Power (Average) — 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA
Supply Voltage (VDD) — 28 V (rated 24 V to 32 V operation)
Minimum Gain — 15 dB (typical 30 dB)
Input VSWR — 5:1
Output VSWR — 5:1
Nominal Impedance — 50 ohm (on-chip matched)
P1dB (Output) — 46 dBm (per distributor listing)
Encapsulamento — TO-272 WB-16 (over-molded plastic, 16-lead)
Terminal Finish — Matte Tin (Sn)
Package Body Material — Plastic / Epoxy
Operating Mode — 100% PAR tested for W-CDMA-like signals
Status RoHS — [DATA_NEEDED: RoHS compliance]

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