BSC265N10LSFGATMA1 - 100V 40A N-Channel OptiMOS 2 MOSFET | Infineon
N.º da peça: BSC265N10LSFGATMA1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.58 | $1,58 |
| 10 | $1.42 | $14,20 |
| 100 | $1.18 | $118,00 |
| 500 | $0.96 | $480,00 |
| 1.000 | $0.84 | $840,00 |
| 5.000 | $0.72 | $3.600,00 |
BSC265N10LSFGATMA1 Visão geral
What is an N-channel power MOSFET? An N-channel MOSFET is a voltage-controlled semiconductor switch in which an n-type conduction channel forms between source and drain when a positive gate-source voltage is applied. Power MOSFETs in the OptiMOS 2 family use trench-gate silicon technology to minimise on-state resistance (RDS(on)) and gate charge (Qg), placing them in the hierarchy: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> power switch. They are the workhorse building block for DC-DC converters, motor drives, and protection circuits in industrial, computing, and automotive systems.
Key features of the BSC265N10LSFGATMA1 include an extremely low on-state resistance for a 100V part, an integrated Schottky-like body diode optimised for synchronous rectification, and low gate charge that minimises driver losses at high switching frequencies. The device is specified to handle high peak currents during in-rush events and is qualified for surface-mount reflow assembly with an MSL rating suitable for standard lead-free profiles.
Technically, the OptiMOS 2 cell design shrinks the MOSFET pitch while keeping the same active silicon area, halving RDS(on) per unit area versus the previous generation. The exposed metal pad on the bottom of the TDSON-8 package provides a low-thermal-resistance path to the PCB copper, enabling the 78W (Tc) dissipation figure. The avalanche-rated body diode is robust enough for hard-commutated topologies, while low Qrr reduces reverse-recovery losses in bridge circuits.
Typical applications include synchronous rectification in 48V telecom and server DC-DC converters, hot-swap and OR-ing controllers in 12V/24V distributed-power systems, motor-drive half-bridges in industrial automation, and high-current load switches in battery management. The 100V rating also covers 48V telecom rails with ample derating margin.
When designing with this part, verify that the gate driver's voltage swing matches the device's VGS(th) and fully-enhanced plateau region, and ensure the PCB copper area under the exposed pad is large enough to keep the junction below the maximum rating. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Alternativas drop-in para BSC265N10LSFGATMA1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com BSC265N10LSFGATMA1 (mesmo formato e footprint) — diferindo em Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
BSC146N10LS5ATMA1
✅ Drop-In✓ Em estoque
$0.74 / unidade
Ver ficha técnica →BSC050N10NS5ATMA1
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BSC027N10NS5ATMA1
✅ Drop-In✓ Em estoque
$1.1 / unidade
Ver ficha técnica →BSC034N06NSATMA1
✅ Drop-In✓ Em estoque
$0.65 / unidade
Ver ficha técnica →BSC118N10NSGATMA1
✅ Drop-In✓ Em estoque
$0.78 / unidade
Ver ficha técnica →BSC100N10NSFGATMA1
✅ Drop-In✓ Em estoque
$1.49 / unidade
Ver ficha técnica →FDMC86160
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BSC265N10LSFGATMA1 Classificações máximas e características elétricas
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc) | 40 A |
| Continuous Drain Current (ID, Ta) | 6.5 A |
| Power Dissipation (PD, Tc) | 78 W |
| Technology | OptiMOS 2 (TrenchFET) |
| Encapsulamento | PG-TDSON-8-1 (TDSON-8) |
| Tipo de montagem | Surface Mount |
| Faixa de temperatura de operação | -55 C to +150 C (junction) |
| Nível MSL | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant |
| Lead-Free | Yes |
| Avalanche Rated | Yes |
| Series | OptiMOS 2 |
Configuração de pinos do BSC265N10LSFGATMA1
| Pino 1 | G — Gate |
| Pino 2 | S — Source |
| Pino 3 | S — Source |
| Pino 4 | D — Drain (also connected to exposed pad) |
| Pino 5 | S — Source |
| Pino 6 | S — Source |
| Pino 7 | S — Source |
| Pino 8 | S — Source |
Área de Operação Segura (BSC265N10LSFGATMA1, DC, Tc=25C)
Aplicações típicas
BSC265N10LSFGATMA1 é adequado para 7 aplicaçãos: 48V Telecom Synchronous Rectification, 24V Industrial Motor Drive Half-Bridge, Hot-Swap / OR-ing Controller Switch, Battery Management Load Switch, Solar Inverter Power Switch, Automotive 12V Load Switch, Server / Datacenter 12V POL.
48V Telecom Synchronous Rectification
The BSC265N10LSFGATMA1 is well suited to secondary-side synchronous rectification in 48V-input isolated DC-DC converters for telecom and server applications. Its 100V VDS rating provides 2x margin over the 48V nominal bus, and the 40A Tc current rating handles the >30A output currents typical of 1-2 kW brick converters. The OptiMOS 2 trench silicon delivers low on-state resistance and moderate Qg, minimising both conduction and switching losses. Compared to using a Schottky diode, a synchronous MOSFET pair using BSC265N10LSFGATMA1 typically reduces rectifier losses by 60-80%. The TDSON-8 package's exposed thermal pad couples directly to the inner PCB copper layers for effective heat spreading.
Recomendado
24V Industrial Motor Drive Half-Bridge
In 24V industrial motor-drive half-bridges, the BSC265N10LSFGATMA1 serves as the low-side or high-side switch in a PWM-controlled H-bridge. Its 100V rating covers the 24V bus plus back-EMF transients from inductive loads, while the 40A continuous current supports motors up to ~5A continuous (with appropriate heatsinking). The low gate charge simplifies gate-driver design, and the avalanche-rated body diode handles dead-time conduction with robust energy absorption. For high-side use, ensure the gate driver supports 100V common-mode transients and provides sufficient drive strength for the Qg value specified by the datasheet.
Recomendado
Hot-Swap / OR-ing Controller Switch
The BSC265N10LSFGATMA1 is widely used as the series pass element in 12V and 24V hot-swap and OR-ing controllers. During in-rush, the device must survive simultaneous high voltage and high current for tens of milliseconds - its 78W Tc power dissipation capability and avalanche-rated body diode make it suitable for this stress. The low RDS(on) keeps steady-state conduction loss in the load path below 1-2% even at 20-30A. For 48V hot-swap applications, verify that the safe operating area of the specific device accommodates the inrush time of your input capacitor bank; the OptiMOS 2 family typically supports 100V/30A inrush for 10 ms.
Recomendado
Battery Management Load Switch
In 12V/24V battery management systems, the BSC265N10LSFGATMA1 serves as the low-side or high-side load disconnect switch. The 100V VDS rating exceeds the battery stack voltage by 4x, providing robust overvoltage protection during load-dump transients. The 40A continuous current handles typical 20-30A battery packs, while the low RDS(on) minimises quiescent current draw in the load path. The OptiMOS 2 family is well characterised for inrush and short-circuit events typical of battery packs, and the device's MSL-1 moisture sensitivity simplifies in-line manufacturing.
Recomendado
Solar Inverter Power Switch
The BSC265N10LSFGATMA1 is well suited to low-side switches in micro-inverters and DC-DC boost stages of small solar power systems. The 100V VDS rating covers typical open-circuit solar panel voltages up to 60V with substantial margin. The 40A continuous current supports panel currents up to ~20A in non-microinverter topologies. The OptiMOS 2 technology's avalanche-rated body diode is robust during reverse-recovery events in the bridge configuration, and the TDSON-8 package's low thermal resistance keeps Tj well below the 150 C maximum even with modest copper pours.
Recomendado
Automotive 12V Load Switch
In non-safety automotive 12V load-switching applications such as lighting drivers, seat heaters, or auxiliary outlet control, the BSC265N10LSFGATMA1 functions as a robust low-side or high-side switch. Its 100V VDS rating easily handles 12V nominal plus load-dump transients up to 35V, and the 40A current rating supports most 12V body-electronics loads. The OptiMOS 2 family is widely used in automotive applications; however, for AEC-Q100-qualified designs the automotive-grade variant BSC265N10LSFG (without ATMA1 suffix on grade, or specifically the -Q1 suffix where available) should be selected. Verify AEC-Q100 qualification status with Infineon before final selection for safety-relevant automotive applications.
Recomendado
Server / Datacenter 12V POL
In server and datacom point-of-load (POL) converters operating from a 12V intermediate bus, the BSC265N10LSFGATMA1 can serve as the synchronous rectifier MOSFET on the low-voltage side. Its low RDS(on) minimises conduction loss at the 50-100A output currents typical of high-current POL designs, and the TDSON-8 footprint allows dense multi-phase layouts with the inductor on top. The OptiMOS 2 generation is mature and well-characterised across server OEMs, providing confidence in long-term supply and second-source options.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para BSC265N10LSFGATMA1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | BSC146N10LS5ATMA1 | BSC050N10NS5ATMA1 | BSC034N06NSATMA1 | FDMC86160 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | PG-TDSON-8-1 (TDSON-8) | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | Power33 (QFN-style - verify pinout) |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 60 V (lower rating) | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 40 A | Comparable (40-50 A class) | Comparable | Higher rating (lower VDS) | Comparable |
| Technology / Family | OptiMOS 2 (TrenchFET) | OptiMOS 5 (newer) | OptiMOS 5 (newer) | OptiMOS family | onsemi PowerTrench |
| On-State Resistance (RDS(on)) | Low (OptiMOS 2 gen) | ~45% lower than OptiMOS 2 | ~50% lower (5 mOhm class) | 3.4 mOhm class (lower VDS) | Comparable to OptiMOS 2 |
| Power Dissipation (PD, Tc=25C) | 78 W | Similar (78 W class) | Similar | Similar | Comparable |
| RoHS / Lead-Free | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes |
Principais diferenciais
- OptiMOS 2 mature silicon with long-term second-source availability (vs BSC146N10LS5ATMA1)
- 40A continuous drain current (Tc) in compact TDSON-8 footprint (vs BSC034N06NSATMA1)
- Cost-optimised vs OptiMOS 5 generation for mature designs (vs BSC050N10NS5ATMA1)
Notas de projeto
Estimated: at PD = 5 W steady-state on a 1 oz FR4 PCB with 1 square inch of top-side copper under the exposed pad, the TDSON-8 junction-to-ambient thermal resistance is approximately 50 C/W, producing a Tj rise of about 75 C above ambient (for Tj < 125 C, max ambient is therefore 50 C). For continuous 40A operation, the case temperature must be controlled with forced airflow or direct copper heatsink attachment to the exposed pad. Use multi-layer PCB inner copper pours (2 oz copper recommended) to drop RthJA below 35 C/W for full-current operation.
Place the BSC265N10LSFGATMA1 with its exposed pad directly over a continuous PCB copper pour spanning at least 50 mm x 50 mm on the top layer, with thermal vias (0.3 mm drill, 0.6 mm pad, 1.0 mm pitch) connecting to inner copper layers. Place the gate-driver IC within 10 mm of pin 1 (gate) to minimise gate-loop inductance. Source-sensing for the gate driver should connect to the source pins (2, 3, 7, 8) of the MOSFET, not to a remote ground point, to avoid parasitic-source inductance causing gate-drive ringing and possible dv/dt-induced turn-on.
Do not operate the BSC265N10LSFGATMA1 above 100V VDS - even brief transients exceeding this will avalanche the device and may cause permanent degradation. Ensure the gate-driver voltage does not exceed the absolute maximum VGS rating of +/- 20V; many gate drivers swing to 12V, which is sufficient for full enhancement. The body diode is avalanche-rated but should not be used as a continuous freewheeling element at high current - use an external Schottky or synchronous pair for continuous conduction. Always check the latest datasheet revision before finalising the BOM, as Infineon periodically updates RDS(on) and SOA figures.
The BSC265N10LSFGATMA1's input capacitance (Ciss) and gate charge (Qg) interact with the gate-loop inductance to form an LC tank; without adequate gate damping the gate may ring above VGS(max) and damage the gate oxide. Add a 10-ohm gate-source resistor close to the MOSFET to damp the gate-loop, and consider a small ferrite bead in series with the gate for high-frequency noise suppression. For switching frequencies above 200 kHz, use a gate driver with sink-current capability of at least 2A to ensure fast turn-off and minimise switching loss.
Informações de conformidade
RoHS compliant per Infineon product page and DigiKey listing. AEC-Q100 qualification status is not_applicable for the standard ATMA1-suffix part - Infineon sells automotive-qualified variants with different suffix; consult Infineon product naming guide. Lead-free per MSL-1 reflow compliance.
