IRFR5505TRLPBF - P-Ch 55V 18A 110mOhm DPAK MOSFET | Infineon
N.º da peça: IRFR5505TRLPBF ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.78 | $0,78 |
| 10 | $0.71 | $7,10 |
| 100 | $0.58 | $58,00 |
| 500 | $0.46 | $230,00 |
| 1.000 | $0.38 | $380,00 |
IRFR5505TRLPBF Visão geral
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that conducts current between drain and source when the gate is biased. P-channel MOSFETs conduct with the source at a higher potential than the drain, which simplifies high-side load switching by allowing the gate drive to be referenced to ground. The IRFR5505 belongs to the power MOSFET -> discrete semiconductor -> power management hierarchy, and is widely used as a load switch, synchronous rectifier, or low-side/-high-side switch in DC-DC conversion stages.
Key specifications include VDS = -55 V, ID = -18 A (Tc), RDS(on) = 110 mOhm max at VGS = -10 V, total gate charge of 21.3 nC, and a continuous power dissipation of 57 W at Tc = 25 °C. The device is rated for an operating junction temperature of -55 °C to +175 °C, and is offered in a lead-free DPAK (TO-252AA) footprint that is footprint-compatible with industry-standard DPAK land patterns. The 'PBF' suffix confirms lead-free / RoHS compliance.
The architecture uses Infineon's proprietary HEXFET® cell geometry, a fifth-generation planar stripe layout that minimizes cell pitch while increasing channel density per die area. This translates to low conduction loss and high avalanche ruggedness, with low thermal resistance of approximately 50 °C/W junction-to-case enabling thermal management via the DPAK tab and PCB copper area. The fast switching speed combined with low gate charge makes it suitable for high-frequency PWM stages above 100 kHz.
Typical applications include DC-DC converter high-side switches, polarity-reversal protection (ideal-diode OR-ing), load management in battery-powered systems, motor drive H-bridges, and power-rail switching in industrial automation and telecom hardware. It is also commonly deployed in power-OR'ing circuits for redundant supplies and as a synchronous rectifier in low-to-medium power buck converters.
When designing with this part, observe the SOA (Safe Operating Area) limits and ensure the gate drive voltage swing (VGS) is sufficient to fully enhance the device. Linear-mode operation above the pulsed current rating will quickly exceed thermal limits; switch-mode operation is recommended for high-current paths. The tab is electrically tied to the drain, so the PCB copper pad must be sized to handle continuous current and thermal dissipation.
Alternativas drop-in para IRFR5505TRLPBF — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IRFR5505TRLPBF (mesmo formato e footprint) — diferindo em Technology, Package, Operating Temperature Range, Mounting Type, Operating Junction Temperature.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IRFR5505TRPBF
✅ Drop-In✓ Em estoque
$0.48 / unidade
Ver ficha técnica →AUIRFR5505TRL
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFR024NTRPBF
✅ Drop-In✓ Em estoque
$0.31 / unidade
Ver ficha técnica →IRF7205TRPBF
✅ Drop-In✓ Em estoque
$0.18 / unidade
Ver ficha técnica →SPD18P06PG
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
NDT2955
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFR5505TRLPBF Classificações máximas e características elétricas
| Polarity | P-Channel |
| MOSFET Operating Mode | Enhancement |
| VDS (Drain-Source Voltage) | -55 V |
| Continuous Drain Current (ID) | -18 A (Tc) |
| On-Resistance RDS(on) max | 110 mOhm (VGS = -10 V) |
| Total Gate Charge (Qg) | 21.3 nC |
| Power Dissipation (PD) | 57 W (Tc = 25 °C) |
| Faixa de temperatura de operação | -55 °C to +175 °C |
| Technology | IR MOSFET™ (HEXFET® generation 5) |
| Encapsulamento | TO-252AA (DPAK), surface mount |
| Tipo de montagem | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix) |
| Nível MSL | 1 |
Configuração de pinos do IRFR5505TRLPBF
| Pino 1 | Gate — Gate drive input (P-channel: drive low to turn on) |
| Pino 2 | Drain — Drain terminal (electrically connected to metal tab) |
| Pino 3 | Source — Source terminal (input rail for P-channel high-side switch) |
Área de Operação Segura (DC)
Aplicações típicas
IRFR5505TRLPBF é adequado para 6 aplicaçãos: DC-DC Converter High-Side Switch, Battery Polarity-Reversal / Reverse-Protection, Load Management in Battery-Powered Systems, Motor Drive H-Bridge / Half-Bridge, Telecom / Industrial 48 V Power-OR'ing and Redundancy, Synchronous Rectifier in Low-Power Buck Converters.
DC-DC Converter High-Side Switch
The IRFR5505TRLPBF's P-channel configuration, -55 V VDS, and 110 mOhm RDS(on) make it a strong fit for high-side switching in buck and buck-boost converters up to ~150 W. Placed between the input rail and the inductor with VGS driven to ground for ON, the part's low RDS(on) per silicon area keeps conduction losses below 2 W at -10 A, while the 21.3 nC gate charge allows switching above 200 kHz without exceeding the gate-drive budget. The DPAK tab provides adequate thermal dissipation for continuous -10 A operation with proper PCB copper.
Recomendado
Battery Polarity-Reversal / Reverse-Protection
In reverse-polarity protection circuits, the IRFR5505TRLPBF is wired source-side to the load, drain to the battery negative, with gate tied to ground. Under correct polarity, the gate-source voltage is negative enough to fully enhance the device, giving full conduction with only 110 mOhm RDS(on). Under reverse polarity the MOSFET self-biases off, blocking current and protecting downstream electronics. The -55 V rating gives wide margin over typical 12 V / 24 V automotive and industrial battery rails, and the -55 °C to +175 °C operating range supports automotive underhood deployments.
Recomendado
Load Management in Battery-Powered Systems
For battery disconnect and load management in portable industrial and IoT equipment, the IRFR5505TRLPBF offers -18 A switching capability with sub-microamp leakage paths when VGS is biased to 0 V (off state). Its low 110 mOhm RDS(on) minimizes voltage drop across the switch, preserving usable battery capacity at high pulse loads. The P-channel topology eliminates the need for a charge pump or bootstrap supply to drive the gate, simplifying the power tree. The DPAK package handles transient switching losses comfortably while the lead-free PBF suffix ensures compliance with battery-pack environmental regulations.
Recomendado
Motor Drive H-Bridge / Half-Bridge
Within the high-side half of an H-bridge motor driver, the IRFR5505TRLPBF provides -18 A peak handling for brushed DC motors up to ~24 V. With the tab electrically tied to the drain, mounting to a copper-clad heatsink or PCB copper pour handles up to 57 W of dissipation at Tc = 25 °C. The fifth-generation HEXFET® cell design tolerates avalanche events during inductive switching, important for unclamped motor windings. The P-channel complement simplifies gate-drive sequencing in half-bridge applications versus using high-side N-channel MOSFETs that require charge pumps.
Recomendado
Telecom / Industrial 48 V Power-OR'ing and Redundancy
In -48 V telecom bus power-OR'ing circuits that combine two redundant supplies, two IRFR5505TRLPBF devices back-feed blocking is achieved by tying each MOSFET's source to the load rail and gate to the common ground. The diode-MOSFET hybrid 'ideal diode' arrangement exploits the device's low RDS(on) to drop only ~1.1 V at -10 A, far less than a Schottky diode. The -55 V VDS rating provides ample margin above the -48 V nominal bus, and the wide operating temperature range suits outdoor cabinet deployments.
Recomendado
Synchronous Rectifier in Low-Power Buck Converters
Although less common than N-channel synchronous rectifiers, the IRFR5505TRLPBF is sometimes deployed in low-to-medium current buck stages where the topology naturally aligns with P-channel high-side switches and P-channel low-side rectifiers. The 110 mOhm RDS(on) and 21.3 nC gate charge balance conduction and switching losses to deliver efficiencies above 90% in 12 V input / 5 V output converters at 3-5 A loads. The DPAK footprint simplifies board layout versus discrete Schottky rectifiers and improves thermal coupling to the PCB.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IRFR5505TRLPBF — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IRFR5505TRPBF | AUIRFR5505TRL | IRFR024NTRPBF | IRF7205TRPBF | SPD18P06PG | NDT2955 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Polarity | P-Channel | P-Channel | P-Channel | N-Channel | P-Channel | P-Channel | P-Channel |
| VDS max | -55 V | -55 V | -55 V | 55 V (N-ch) | -55 V | -60 V | -60 V |
| Continuous ID | -18 A | -18 A | -18 A | 17 A (N-ch) | -22 A | -18 A | -12 A (-33%) |
| RDS(on) max @ VGS=10V | 110 mOhm | 110 mOhm | 110 mOhm | 75 mOhm (N-ch) | 70 mOhm (-36%) | 130 mOhm (+18%) | 200 mOhm (+82%) |
| Automotive Grade (AEC-Q101) | No (standard grade) | No | Yes | No | No | No | No |
Principais diferenciais
- Fifth-generation HEXFET® cell density achieves 110 mOhm in DPAK at -18 A (vs NDT2955 (onsemi))
- Available in automotive-qualified variant with identical specs (vs AUIRFR5505TRL)
- P-channel topology simplifies high-side gate drive vs N-channel counterparts (vs IRFR024NTRPBF (N-channel))
Notas de projeto
Estimated: at continuous ID = -10 A and RDS(on) = 110 mOhm, conduction loss is approximately 11 W. The DPAK package should be soldered to a copper pad of at least 1 square inch (645 mm²) on the PCB, with thermal vias to an internal copper plane, to keep junction temperature rise within the 175 °C limit. Without this copper area, sustained operation at -10 A is not advisable. Forced-air cooling extends the safe operating envelope further.
Because the metal tab of the DPAK is electrically tied to the drain, the PCB copper pad under the tab serves both as electrical connection (drain) and thermal dissipation path. Use a star-grounded layout with the gate drive trace kept short (<20 mm) and routed away from the drain tab to minimize capacitive coupling. A 10 kOhm gate-source pull-down resistor ensures the MOSFET stays off during controller power-up transients. The Source pin (pin 3) carries the full load current and must be sized accordingly in the PCB trace width calculator.
For P-channel enhancement-mode MOSFETs in high-side switching, the gate must be driven at least 10 V BELOW the source voltage (VGS <= -10 V) to achieve the rated RDS(on). Driving the gate to ground (0 V) when source is at 12 V gives VGS = -12 V, which is fine. A common pitfall is insufficient gate drive amplitude, which leaves the device partially enhanced, dramatically raising RDS(on) and dissipation. Also verify avalanche rating for inductive loads (motors, solenoids) and add a TVS clamp or free-wheeling diode if needed.
The 21.3 nC total gate charge Qg means a gate driver must source/sink at least 200 mA peak (Qg / (rise_time)) for switching speeds below 100 ns. For slow-switching applications (>1 µs) a 1 kOhm gate resistor suffices. For switching above 200 kHz, place a small ferrite bead or RC snubber across drain-source to suppress ringing caused by lead inductance and the DPAK package's drain tab capacitance.
Informações de conformidade
PBF suffix confirms lead-free plating and RoHS compliance. Halogen-free per Infineon product page. AEC-Q100 not applicable (AEC-Q101 variant AUIRFR5505TRL is the automotive-grade option). Conflict-minerals compliant per Infineon supplier declarations.
