IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon
N.º da peça: IRLR2905TRPBF ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.42 | $1,42 |
| 10 | $1.18 | $11,80 |
| 100 | $0.92 | $92,00 |
| 500 | $0.74 | $370,00 |
| 1.000 | $0.61 | $610,00 |
IRLR2905TRPBF Visão geral
A power MOSFET is a voltage-controlled semiconductor switch that regulates or switches current flow in power electronics. Within the broader taxonomy, the IRLR2905TRPBF belongs to the N-channel enhancement-mode MOSFET family, which itself sits under power MOSFETs, then discrete semiconductors, and finally the wider power management and switching IC ecosystem. Its low on-resistance minimizes conduction losses, while logic-level gate drive capability allows direct microcontroller interface.
Key features include logic-level gate drive (fully enhanced at VGS = 4.5 V), an on-resistance of just 27 mOhm, fast switching performance, ultra-low RDS(on) per silicon area, fully avalanche-rated ruggedness, and lead-free RoHS-compliant construction. The HEXFET fifth-generation design represents International Rectifier's (now Infineon) advanced process technology optimized for both switching and linear-mode operation.
Internally, the device uses a planar cell structure with optimized die sizing to balance conduction loss, switching speed, and avalanche energy capability. The DPAK (TO-252) surface-mount package provides an exposed tab that doubles as the drain terminal and serves as a thermal dissipation path, enabling high-current handling in a compact footprint suitable for automated assembly.
Typical applications include motor control, DC-DC converters, battery management systems, power load switching, and high-current switching circuits in industrial and automotive systems. The part is rated for operation up to 175 C junction temperature, providing thermal margin for demanding power environments.
When designing with this MOSFET, ensure the gate drive voltage meets the threshold specification (logic-level compatible) and provide adequate heatsinking via PCB copper area on the drain tab. The avalanche-rated rating allows safe operation during unclamped inductive switching events such as motor or relay turn-off.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternativas drop-in para IRLR2905TRPBF — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IRLR2905TRPBF (mesmo formato e footprint) — diferindo em Technology, Operating Temperature Range, Total Gate Charge (Qg), Drain-to-Source Voltage (VDS), Gate Threshold Voltage (VGS(th)).
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IRLR2905ZPBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFR1205TRPBF
✅ Drop-In✓ Em estoque
$0.49 / unidade
Ver ficha técnica →IRFR5410TRPBF
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$0.71 / unidade
Ver ficha técnica →IRFR5305TRPBF
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$0.32 / unidade
Ver ficha técnica →IRF640NPBF
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$0.88 / unidade
Ver ficha técnica →VBE1638
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRLR2905TRPBF Classificações máximas e características elétricas
| FET Type | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET, fifth generation) |
| Drain-to-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 42 A |
| On-Resistance RDS(on) max @ VGS=10V | 27 mOhm |
| Gate Charge (Qg) | 32 nC |
| Power Dissipation (PD) at Tc=25C | 110 W |
| Temperatura de junção de operação | -55C to +175C |
| Encapsulamento | TO-252AA (DPAK), surface mount |
| Tipo de montagem | Surface Mount |
| Avalanche Rated | Yes |
| Lead-Free / RoHS | Yes / Compliant |
| Gate Drive | Logic-level compatible |
Configuração de pinos do IRLR2905TRPBF
| Pino 1 | Gate — MOSFET gate input; logic-level compatible |
| Pino 2 | Drain — MOSFET drain; tied to metal mounting tab |
| Pino 3 | Source — MOSFET source |
| Pino TAB | Drain (Tab) — Exposed metal pad electrically connected to drain for thermal dissipation |
Área de Operação Segura - IRLR2905TRPBF
Aplicações típicas
IRLR2905TRPBF é adequado para 6 aplicaçãos: DC Motor Drive (H-Bridge / Half-Bridge), Synchronous Rectifier in DC-DC Converters, Battery Protection and Load Switching, Power OR-ing and Hot-Swap Controller, Automotive 12V/24V Load Switching, Solenoid and Relay Driver.
DC Motor Drive (H-Bridge / Half-Bridge)
The IRLR2905TRPBF's 42 A continuous drain current and 27 mOhm RDS(on) make it well-suited as the low-side or high-side switch in brushed DC motor drive H-bridges. Its logic-level gate drive allows direct PWM control from a 5 V microcontroller without a dedicated gate driver, simplifying the BOM. The 55 V VDS rating provides comfortable headroom over 24 V battery systems with inductive kick-back transients clamped by the avalanche-rated die. Mounted on 2 oz copper with a DPAK thermal pad, the part dissipates continuous motor stall current without overheating.
Recomendado
Synchronous Rectifier in DC-DC Converters
In buck or synchronous buck converters operating from 12 V or 24 V rails, the IRLR2905TRPBF serves as the low-side synchronous rectifier. Its low 27 mOhm RDS(on) reduces conduction losses versus a Schottky diode, improving converter efficiency by 3-5% at full load. The 32 nC gate charge enables switching frequencies up to 200 kHz without excessive driver losses. The 55 V rating comfortably exceeds 24 V input transients, and the DPAK package allows automated high-density assembly in VRM and POL designs.
Recomendado
Battery Protection and Load Switching
The IRLR2905TRPBF functions as a high-current load disconnect switch in battery management systems (BMS) for e-bikes, power tools, and portable equipment. Its 42 A current rating handles motor inrush currents, while the logic-level gate enables low-side control via a microcontroller or protection IC. The avalanche-rated die survives reverse-battery and load-dump transients common in 24 V industrial battery packs. The 27 mOhm RDS(on) keeps voltage drop below 100 mV at 4 A continuous, preserving battery runtime.
Recomendado
Power OR-ing and Hot-Swap Controller
In redundant power supply systems, the IRLR2905TRPBF acts as an OR-ing MOSFET to prevent reverse current flow between paralleled 24 V or 48 V supplies. Its low RDS(on) of 27 mOhm minimizes voltage drop across the OR-ing element, reducing dissipation versus a diode-OR scheme. Logic-level gate drive simplifies controller interface, and the avalanche rating handles inductive transients during plug-in events. DPAK packaging enables high-density redundant power designs in telecom and server applications.
Recomendado
Automotive 12V/24V Load Switching
While not AEC-Q101 qualified, the IRLR2905TRPBF is used in non-safety automotive subsystems such as infotainment power switching, LED driving, and accessory load control. Its 55 V rating handles 24 V truck electrical systems with load-dump transients, while the 42 A current supports high-power lighting and audio amplifier rails. The logic-level gate accepts direct drive from automotive MCUs at 5 V, eliminating driver stages. The DPAK package supports automated assembly lines common in automotive tier-1 manufacturing.
Recomendado
Solenoid and Relay Driver
The IRLR2905TRPBF drives inductive loads such as 24 V solenoids, valves, and electromechanical relays in industrial control systems. Its avalanche rating safely absorbs the inductive kick-back energy when switching off, eliminating the need for an external freewheeling diode in many cases. The 42 A continuous current handles inrush of large solenoids, while the DPAK package provides adequate thermal dissipation for repeated switching cycles. Logic-level gate drive allows direct microcontroller control without pre-driver circuits.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IRLR2905TRPBF — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IRLR2905ZPBF | IRFR1205TRPBF | IRFR5410TRPBF | IRFR5305TRPBF | IRF640NPBF | VBE1638 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| VDS max | 55 V | 55 V | 55 V | 100 V | -55 V (P-channel) | 200 V | Higher than 55 V |
| Polarity | N-channel | N-channel | N-channel | N-channel | P-channel | N-channel | N-channel |
Principais diferenciais
- High continuous current in compact DPAK footprint (vs IRFR5410TRPBF)
- Logic-level gate drive eliminates driver stage (vs IRF640NPBF)
- Same-family pin compatibility with 175°C variant (vs IRLR2905ZPBF)
Notas de projeto
Estimated: at ID=20A and RDS(on)=27 mOhm, conduction loss is approximately 10.8 W. With DPAK theta_JC at 1.0 C/W, the junction rises 10.8 C above the case. For ambient operation without a heatsink, the DPAK's theta_JA of ~50 C/W (on 1 sq inch of 2 oz copper) limits practical dissipation to roughly 1.5 W before derating. Provide at least 2 sq inches of copper on the drain tab for sustained operation above 5 A continuous load.
Route the drain tab (pin 2 / exposed pad) directly to a continuous copper pour on both top and inner PCB layers with thermal vias (typically 9-12 vias of 0.3 mm diameter). Keep source traces short and wide to minimize parasitic inductance that causes ringing during switching transitions. Place the gate drive trace away from the drain node to avoid capacitive coupling that can cause false triggering.
Do not exceed 55 V VDS even during transient events; inductive loads such as motors and solenoids require snubbers or TVS clamps to limit voltage spikes below VDS(max). Ensure the gate drive voltage reaches at least 10 V for full enhancement - logic-level VGS(th) guarantees turn-on but RDS(on) is specified at 10 V. Below 5 V VGS, RDS(on) increases significantly and the part may operate in the linear region, causing excessive dissipation.
Informações de conformidade
Lead-free and RoHS compliant per Infineon datasheet. AEC-Q101 automotive qualification not available for the standard part. The part suffix 'PBF' explicitly indicates lead-free plating.
