ISC015N03LF2SATMA1 - 30V 214A OptiMOS N-Ch MOSFET | Infineon
N.º da peça: ISC015N03LF2SATMA1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $2.18 | $2,18 |
| 10 | $1.92 | $19,20 |
| 100 | $1.54 | $154,00 |
| 500 | $1.21 | $605,00 |
| 1.000 | $0.96 | $960,00 |
ISC015N03LF2SATMA1 Visão geral
A power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied. The "N-channel" designation means conduction is by electrons, giving the lowest on-resistance per unit silicon area. The "OptiMOS™" series is Infineon's sub-40 V trench platform positioned in the power MOSFET product hierarchy as: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> power management. The "-2" suffix in LF2 marks this part as a second-generation OptiMOS die optimized for figures of merit (FOM = RDS(on) × Qg) used by switching-converter designers.
Key electrical characteristics per Infineon datasheet include 30 V drain-source breakdown (VDS max), 1.5 mΩ maximum on-resistance at 10 V VGS, a gate threshold around 2.35 V, and pulsed drain current capability that supports short-circuit and inrush events in telecom and server rails. The part dissipates 3 W at TA=25 °C and 125 W at TC=25 °C, demonstrating the dramatic thermal difference between PCB-side and case-side cooling.
The PG-TDSON-8-62 package exposes the die through a thermal pad on the bottom, allowing direct copper heatsinking through vias to inner PCB planes. This makes ISC015N03LF2SATMA1 a strong fit for high-density synchronous buck converters, hot-swap controllers, e-fuse circuits, and OR-ing FETs in 12 V power distribution where PCB area is constrained but continuous current exceeds 100 A.
Typical applications include 12 V server and telecom point-of-load converters, USB-PD and battery-pack protection FETs, motor-drive half-bridges, and eMMC/SSD power switches. Designers should plan thermal copper area before committing the footprint, since the 1.5 mΩ RDS(on) at full load still dissipates significant power at high currents.
This page consolidates current distributor pricing, drop-in alternatives within the same PG-TDSON-8 footprint, and practical PCB-layout guidance not found in the manufacturer datasheet alone.
Alternativas drop-in para ISC015N03LF2SATMA1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com ISC015N03LF2SATMA1 (mesmo formato e footprint) — diferindo em Package, Continuous Drain Current (ID) at TA=25C, Operating Temperature Range, Product Family, Technology.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
ISC028N03LF2SATMA1
✅ Drop-In✓ Em estoque
$0.86 / unidade
Ver ficha técnica →ISZ028N03LF2SATMA1
✅ Drop-In✓ Em estoque
$0.49 / unidade
Ver ficha técnica →ISZ033N03LF2SATMA1
✅ Drop-In✓ Em estoque
$0.68 / unidade
Ver ficha técnica →ISC015N06NM5ATMA1
✅ Drop-In✓ Em estoque
$0.62 / unidade
Ver ficha técnica →ISC011N04NM7VATMA1
✅ Drop-In✓ Em estoque
$0.41 / unidade
Ver ficha técnica →ISC015N03LF2SATMA1 Classificações máximas e características elétricas
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS™ 2 (<= 40 V trench) |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25C | 43 A |
| Continuous Drain Current (ID) at TC=25C | 214 A |
| On-Resistance RDS(on) max at VGS=10V | 1.5 mΩ |
| Gate Threshold Voltage VGS(th) | 2.35 V |
| Power Dissipation at TA=25C | 3 W |
| Power Dissipation at TC=25C | 125 W |
| Encapsulamento | PG-TDSON-8-62 (TDSON EP) |
| Tipo de montagem | Surface Mount |
| Faixa de temperatura de operação | -55C to +175C |
| Status RoHS | Compliant |
| Lead-Free | Yes |
Configuração de pinos do ISC015N03LF2SATMA1
| Pino 1 | Source — Source connection (low-side return path) |
| Pino 2 | Source — Source connection |
| Pino 3 | Source — Source connection |
| Pino 4 | Gate — Gate drive input |
| Pino 5 | Drain — Drain connection |
| Pino 6 | Drain — Drain connection |
| Pino 7 | Drain — Drain connection |
| Pino 8 | Drain — Drain connection |
Área de Operação Segura (DC)
Aplicações típicas
ISC015N03LF2SATMA1 é adequado para 7 aplicaçãos: 12V Synchronous Buck Converter, Hot-Swap and eFuse Protection, Battery Pack Protection FET, USB-PD and Power Bank Switching, Motor Drive Half-Bridge, OR-ing FET in Redundant Power Systems, LED Driver Output Stage.
12V Synchronous Buck Converter
The ISC015N03LF2SATMA1's 1.5 mΩ max RDS(on) and 214 A continuous drain current make it ideal as the low-side synchronous rectifier FET in 12 V buck converters for server, telecom, and graphics-card VRM stages. Its low gate charge and OptiMOS™ 2 trench technology minimize switching loss at 300-500 kHz typical switching frequencies. Designers pair it with a compatible Infineon OptiMOS™ high-side FET (e.g., ISC015N06NM5ATMA1 for higher-voltage rails) on the same PG-TDSON-8 footprint for compact, high-density VR layouts. The exposed thermal pad enables direct PCB cooling via thermal vias to inner copper planes.
Recomendado
Hot-Swap and eFuse Protection
With 30 V VDS rating and 214 A pulsed current capability, ISC015N03LF2SATMA1 serves as the main pass FET in 12 V hot-swap controllers protecting server backplanes from inrush current during board insertion. The 1.5 mΩ RDS(on) minimizes voltage drop across the protection FET during normal operation, preserving efficiency. Its 2.35 V gate threshold is compatible with standard hot-swap controller drive outputs. Designers should use a gate resistor and TVS clamp to manage transient SOA during load-step events.
Recomendado
Battery Pack Protection FET
The ISC015N03LF2SATMA1 is well suited for the discharge and charge protection FETs in 4S-8S Li-ion battery packs, where 30 V VDS comfortably exceeds the maximum pack voltage under fault conditions. Its 214 A continuous current supports high-power e-bike, power-tool, and light-EV battery packs drawing continuous currents above 100 A. The low RDS(on) reduces thermal dissipation, extending pack runtime. Two ISC015N03LF2SATMA1 FETs can be used back-to-back with a battery management IC for bidirectional protection.
Recomendado
USB-PD and Power Bank Switching
In USB-PD 3.1 EPR applications up to 28 V (AVS) and high-wattage power banks, ISC015N03LF2SATMA1 acts as the output OR-ing or load-switch FET on the 5V-20V rail. Its 30 V VDS rating accommodates USB-PD extended power range, while 1.5 mΩ RDS(on) maintains efficiency at 5 A continuous load. The compact PG-TDSON-8-62 package enables dense PCB layouts needed for portable designs. The exposed pad allows heat spreading through the PCB stackup without external heatsinking.
Recomendado
Motor Drive Half-Bridge
For low-voltage brushed DC and BLDC motor drives in robotics, drones, and small appliances, ISC015N03LF2SATMA1 functions as a half-bridge switch up to 30 V bus with continuous currents exceeding 100 A. Its low gate charge reduces PWM switching losses at 20-50 kHz typical motor PWM frequencies. The PG-TDSON-8 footprint allows compact half-bridge layouts when paired with a high-side companion. Designers should add a bootstrap capacitor and gate-driver IC for high-side drive.
Recomendado
OR-ing FET in Redundant Power Systems
ISC015N03LF2SATMA1 serves as the OR-ing FET in N+1 redundant 12 V power distribution for servers, telecom equipment, and industrial PLCs. Its 1.5 mΩ RDS(on) and 214 A current rating handle continuous load sharing between paralleled power supplies with minimal voltage drop. The fast switching supports reverse-current blocking during hot-swapping of failed PSU modules. The PG-TDSON-8 package footprint enables drop-in upgrades of existing OR-ing designs that need higher current capability.
Recomendado
LED Driver Output Stage
In high-power architectural and automotive LED driver output stages, ISC015N03LF2SATMA1 provides efficient PWM dimming of high-brightness LED strings operating from 12-24 V supplies. Its 1.5 mΩ RDS(on) and high current rating support LED strings drawing up to 100 A with low conduction loss. The fast switching enables PWM dimming frequencies above 1 kHz without audible noise. The exposed thermal pad ensures adequate cooling when driving high-power LED arrays in continuous-on applications.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para ISC015N03LF2SATMA1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | ISC028N03LF2SATMA1 | ISZ028N03LF2SATMA1 | ISZ033N03LF2SATMA1 | ISC015N06NM5ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-62 | PG-TDSON-8-62 (same) | PG-TDSON-8-62 (same) | PG-TDSON-8-62 (same) | PG-TDSON-8-62 (same) | PG-TDSON-8-62 (same) |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 60 V | 40 V |
| On-Resistance RDS(on) max | 1.5 mΩ | 2.8 mΩ | 2.8 mΩ | 3.3 mΩ | 1.5 mΩ | 1.1 mΩ |
| Process Family | OptiMOS 2 (LF2) | OptiMOS 2 (LF2) | OptiMOS 2 (LF2) | OptiMOS 2 (LF2) | OptiMOS 5 (NM5) | OptiMOS 7 (NM7) |
Principais diferenciais
- Lowest RDS(on) in 30V OptiMOS 2 family (vs ISC028N03LF2SATMA1)
- Higher current rating in same package (vs ISZ033N03LF2SATMA1)
- True drop-in same-family replacement available (vs ISC011N04NM7VATMA1)
Notas de projeto
The PG-TDSON-8-62 package exposes its thermal pad on the bottom. At 100 A continuous current and 1.5 mΩ RDS(on), conduction loss is approximately 15 W. Estimated: with 2 oz copper on a 4-layer PCB and a 6x6 thermal via array (0.3 mm drill), thermal resistance theta_JA drops to ~35 °C/W. Without vias, the package alone cannot dissipate the full power - a copper spreader of at least 25x25 mm on top layer is mandatory for high-current operation. Junction temperature must stay below 175 °C maximum rating.
Source pins (1-3) should be connected to a wide copper pour on the bottom layer, with vias stitching the thermal pad to inner ground/power planes. The gate pin (4) requires a 10-100 Ω gate resistor to dampen parasitic oscillations; place this resistor within 5 mm of the gate pin. Source-sense connection is not available on this part - gate drive references the source pin directly. Keep high-current loops minimal to reduce parasitic inductance that causes voltage overshoot during switching.
Do not drive the gate above the absolute maximum VGS of ±20 V, even though typical operation uses 10 V. Use a gate-source TVS or Zener clamp (e.g., 12 V) if the gate driver can produce transients above 20 V. The 30 V VDS rating must be derated at high junction temperature - design for 80% of rating (24 V max operating) to ensure long-term reliability. Verify avalanche rating (EAS) if the part will see unclamped inductive kickback from a motor or relay coil.
Informações de conformidade
RoHS and REACH compliant per Infineon product page and DigiKey listing. Not AEC-Q100 qualified - this is an industrial-grade part; for automotive applications consult Infineon automotive MOSFET portfolio.
