ISZ230N10NM6ATMA1 - 100V 31A OptiMOS 6 N-MOSFET | Infineon
N.º da peça: ISZ230N10NM6ATMA1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.18 | $1,18 |
| 10 | $1.04 | $10,40 |
| 100 | $0.88 | $88,00 |
| 500 | $0.82 | $410,00 |
| 1.000 | $0.7664 | $766,40 |
| 3.000 | $0.71 | $2.130,00 |
ISZ230N10NM6ATMA1 Visão geral
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device in which a positive gate-to-source voltage creates a conductive n-channel between drain and source. N-channel MOSFETs are the workhorse of switched-mode power conversion because their lower on-resistance per unit silicon area (compared to P-channel devices) yields higher efficiency. The OptiMOS 6 family belongs to the broader category of power MOSFETs, which sit under discrete semiconductors in the power-management hierarchy and serve as the switching element in DC-DC converters, motor drives, and synchronous rectification stages.
Key specifications include a typical on-resistance of 23 milliohms at VGS=10V and ID=10A, a low gate threshold around 3.3V at 13 microamps, and an avalanche-rated single-pulse body diode. The trench-gate structure minimizes both conduction and switching losses, while the FL (flip-chip leadless) package provides an extremely low package inductance path and top-side cooling through the exposed pad. The PG-TSDSON-8 footprint is widely second-sourced, giving board designers flexibility across the 100V MOSFET category.
Typical applications include telecom 48V hot-swap controllers, server DC-DC point-of-load converters, solar micro-inverters, and high-frequency drone ESC power stages. The combination of low Qgd and low RDS(on) makes this part well suited to hard-switched topologies above 100 kHz where switching loss dominates. Compared with the OptiMOS 5 generation, the ISZ230N10NM6 reduces gate charge by approximately 30%, allowing smaller gate drivers and lower total BOM cost.
When designing with this MOSFET, observe the SOA boundaries at high VDS and verify that the gate driver can supply the peak gate current demanded by Qg at the chosen switching frequency. Keep the gate-drive loop area minimal by placing the gate resistor and bypass capacitor directly at the gate pad. For high-side (high-side switch) or low-side placements, the same package pinout applies, but thermal coupling to the PCB copper pour is critical for sustained high-current operation.
Alternativas drop-in para ISZ230N10NM6ATMA1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com ISZ230N10NM6ATMA1 (mesmo formato e footprint) — diferindo em Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
BSC098N10NS5ATMA1
✅ Drop-In✓ Em estoque
$0.55 / unidade
Ver ficha técnica →ISC037N12NM6ATMA1
✅ Drop-In✓ Em estoque
$3.62 / unidade
Ver ficha técnica →IPD068N10N3GATMA1
✅ Drop-In✓ Em estoque
$0.65 / unidade
Ver ficha técnica →BSC014NE2LSIATMA1
✅ Drop-In✓ Em estoque
$0.48 / unidade
Ver ficha técnica →BSC070N10NS5ATMA1
✅ Drop-In✓ Em estoque
$0.68 / unidade
Ver ficha técnica →ISZ230N10NM6ATMA1 Classificações máximas e características elétricas
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (Ta) | 7.7 A |
| Continuous Drain Current (Tc) | 31 A |
| Power Dissipation (Ta) | 3 W |
| Power Dissipation (Tc) | 48 W |
| On-Resistance RDS(on) at VGS=10V | 23 mΩ (typ, ID=10A) |
| Gate Threshold Voltage VGS(th) | 3.3 V (typ at 13 µA) |
| Technology | OptiMOS 6 trench MOSFET |
| Encapsulamento | PG-TSDSON-8 FL (3.3 x 3.3 mm) |
| Tipo de montagem | Surface Mount |
| Faixa de temperatura de operação | -55 °C to +150 °C (junction) |
| Gate Drive Voltage (recommended) | 10 V |
| Nível MSL | MSL1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant |
| Family | OptiMOS 6 (100V class) |
Configuração de pinos do ISZ230N10NM6ATMA1
| Pino 1 | S — Source |
| Pino 2 | S — Source |
| Pino 3 | S — Source |
| Pino 4 | G — Gate |
| Pino 5 | D — Drain (top exposed pad) |
| Pino 6 | D — Drain (top exposed pad) |
| Pino 7 | D — Drain (top exposed pad) |
| Pino 8 | D — Drain (top exposed pad) |
Área de Operação Segura (DC)
Aplicações típicas
ISZ230N10NM6ATMA1 é adequado para 6 aplicaçãos: 48V Telecom Hot-Swap Controller, Server DC-DC Point-of-Load Converter, Solar Micro-Inverter Power Stage, Drone Electronic Speed Controller (ESC), Industrial Synchronous Buck Converter, USB-PD Power Delivery High-Side Switch.
48V Telecom Hot-Swap Controller
The ISZ230N10NM6ATMA1 fits 48V telecom hot-swap applications because its 100V breakdown rating gives 2x voltage headroom over the nominal 48V rail, accommodating transients and inductive ringing. Its 23 milliohm RDS(on) at VGS=10V keeps steady-state conduction loss low, while the PG-TSDSON-8 FL footprint with top-side exposed pad enables direct top-side cooling. According to the Infineon product brief, the 30% improved FOM allows hot-swap controllers to use smaller heat-sinking while sustaining inrush currents. Placed as the high-side or low-side pass element, it reduces both BOM cost and PCB area compared with traditional D2PAK alternatives.
Recomendado
Server DC-DC Point-of-Load Converter
The ISZ230N10NM6ATMA1 serves as the synchronous rectifier or main switch in server intermediate-bus converters thanks to its 100V rating suited for 48V-to-PoL stages and its 31A continuous current capability. The OptiMOS 6 architecture delivers 30% lower FOM versus OptiMOS 5, reducing switching loss at 100-300 kHz operating frequencies common in server power designs. The PG-TSDSON-8 FL package's source-down construction minimizes parasitic source inductance, which directly improves efficiency and reduces voltage overshoot during turn-off transients. Its low gate charge also reduces gate-driver loss in high-frequency synchronous buck topologies.
Recomendado
Solar Micro-Inverter Power Stage
In solar micro-inverter designs, the ISZ230N10NM6ATMA1 acts as the primary switching element in the high-frequency DC-DC and DC-AC stages that interface low-voltage PV panels (typically 20-80V) to the grid. The 100V VDS rating covers 80V battery stacks with adequate margin, while the 23 milliohm RDS(on) minimizes conduction loss in continuous-current mode operation. Per the Infineon product brief, the optimized FOM improves inverter efficiency by 1-2% versus OptiMOS 5, which directly translates to higher energy harvest. The compact PG-TSDSON-8 FL footprint is essential for the small-form-factor requirements of distributed solar installations.
Recomendado
Drone Electronic Speed Controller (ESC)
The ISZ230N10NM6ATMA1 fits high-frequency drone ESC designs where its 31A Tc-rated current handles multi-kW motor drives while the small 3.3x3.3 mm PG-TSDSON-8 FL footprint preserves PCB area for flight-controller integration. OptiMOS 6's 30% FOM improvement enables switching frequencies above 50 kHz in BLDC motor drives, which shrinks magnetics and reduces audible noise. The exposed top pad allows direct cooling via the drone's aluminum frame, eliminating dedicated heatsinks. Designers value the part's low Qgd for clean switching in half-bridge configurations at 12S LiPo battery stacks.
Recomendado
Industrial Synchronous Buck Converter
The ISZ230N10NM6ATMA1 is well suited as the high-side or low-side switch in industrial 24V/48V-to-low-voltage synchronous buck converters. Its 100V VDS handles 48V industrial bus transients with comfortable margin, while its 23 milliohm RDS(on) keeps efficiency above 95% at typical 5-10A load currents. According to the Infineon OptiMOS 6 brief, the 30% FOM improvement shrinks the gate-driver's required peak current, allowing use of smaller, cheaper driver ICs. The PG-TSDSON-8 FL package's top-side cooling enables operation in sealed industrial enclosures with no forced airflow.
Recomendado
USB-PD Power Delivery High-Side Switch
The ISZ230N10NM6ATMA1 serves as the high-side protection switch in USB-PD 3.1 EPR applications up to 28V/36V/48V output levels. Its 100V breakdown rating gives generous margin over 48V USB-PD EPR maximum output, while the 23 milliohm RDS(on) minimizes voltage drop and power dissipation in cable-compensation paths. The PG-TSDSON-8 FL package supports the small PCB footprint required for compact power banks and laptop chargers. Per Infineon's product brief, the OptiMOS 6 generation improves figure-of-merit by 30%, which lowers both conduction and switching loss in the high-frequency protection FET path.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para ISZ230N10NM6ATMA1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | BSC098N10NS5ATMA1 | ISC037N12NM6ATMA1 | IPD068N10N3GATMA1 | BSC014NE2LSIATMA1 | BSC070N10NS5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSDSON-8 FL | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same |
| Technology | OptiMOS 6 | OptiMOS 5 | OptiMOS 6 | OptiMOS 3 | OptiMOS 2 (25V class) | OptiMOS 5 |
| VDS (max) | 100 V | 100 V | 120 V | 100 V | 25 V | 100 V |
| RDS(on) at VGS=10V | 23 mΩ | ~30 mΩ | ~37 mΩ | ~68 mΩ | ~1.4 mΩ | ~70 mΩ |
| VGS(th) typical | 3.3 V | OptiMOS 5 generation | OptiMOS 6 generation | OptiMOS 3 generation | OptiMOS 2 generation | OptiMOS 5 generation |
| Power Dissipation (Tc) | 48 W | Similar class | Similar class | Similar class | Similar class | Similar class |
| Relative Cost Index | 1.0x (reference) | ~0.95x (lower) | ~1.15x (higher) | ~0.70x (lowest) | ~1.25x (higher) | ~0.65x (lowest) |
Principais diferenciais
- 20% lower RDS(on) than prior OptiMOS 5 generation at same die size (vs BSC098N10NS5ATMA1)
- 30% improved figure-of-merit (FOM = RDS(on) × Qg) vs OptiMOS 5 (vs BSC098N10NS5ATMA1)
- Lower RDS(on) than older-generation OptiMOS 3 part at same voltage class (vs IPD068N10N3GATMA1)
Notas de projeto
The PG-TSDSON-8 FL package relies on the top exposed pad for primary heat dissipation. Estimated: at PD=3W (Ta=25 °C, 1-sq-inch JEDEC EIA/JESD51 footprint), the junction-to-ambient thermal resistance theta_JA is approximately 40 °C/W, yielding a junction temperature rise of 120 °C. For continuous operation above 2 W, place at least 4 thermal vias (0.3 mm drill, 1 oz copper plating) under the drain pad to the inner power plane, and use a top-side copper pour of 100 mm² minimum. Without these measures, sustained 31 A operation will exceed the 150 °C junction limit and trigger thermal shutdown in the application.
Minimize the high-frequency gate-drive loop by routing the gate trace and gate-driver ground return directly over a tight, continuous ground plane. Place the gate resistor (typ. 10-47 Ω) within 5 mm of the gate pad to suppress parasitic ringing caused by the gate-source inductance and MOSFET input capacitance. For high-side switches, ensure the bootstrap capacitor's high-side ground return ties to the source pad directly to avoid ground bounce that can exceed the VGS(th) and cause shoot-through.
Place the ISZ230N10NM6ATMA1 with drain-pad copper pours on both top and bottom layers, stitched with thermal vias at 1.2 mm pitch. Estimated: a 4-via array under a 3.3x3.3 mm pad yields approximately 8 °C/W improvement in theta_JA versus no vias. Keep switching-node traces (drain in buck high-side, source in buck low-side) short and wide to minimize parasitic inductance that causes voltage overshoot above VDS(max) during turn-off. A snubber RC (typ. 10 Ω + 1 nF) across the FET may be required for hard-switched topologies exceeding 100 kHz.
Do not drive the gate above the absolute maximum VGS rating of ±20 V; standard gate-drive supplies of 10-12 V are safe. According to the Infineon product brief, the OptiMOS 6 generation reduces gate charge by approximately 30% versus OptiMOS 5, but designers must still size the gate-driver peak current to charge Qg within the desired rise time. Also observe that the drain-source body diode has a limited reverse-recovery characteristic; for synchronous rectification in high-frequency designs, consider a parallel low-Qrr Schottky diode to prevent dead-time cross-conduction.
Informações de conformidade
RoHS and lead-free compliant per Infineon product page. AEC-Q100 not applicable for this commercial-grade discrete MOSFET; automotive applications should reference Infineon's AEC-Q100-qualified 100V MOSFET family.
