K4RAH165VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung
N.º da peça: K4RAH165VB-BIQK ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
K4RAH165VB-BIQK Visão geral
DDR5 SDRAM is the fifth generation of double-data-rate synchronous dynamic random-access memory. It succeeds DDR4 by delivering higher bandwidth, greater on-die capacities, and roughly 30% better power efficiency per bit. A DDR5 device integrates its own power management architecture, on-die ECC, and decision-feedback equalization to maintain signal integrity at multi-gigabit data rates, making DDR5 the foundation of the memory hierarchy in modern computing platforms.
Key features of the K4RAH165VB-BIQK include its 16 Gb density in a x16 bus width configuration, DDR5-4800 operation, and an industrial temperature rating implied by the BI speed/temp code suffix. On-chip error correction code (ECC) improves reliability by detecting and correcting internal bit errors without host overhead. Supporting functions documented for the K4RAH165VB family include auto self-refresh, asynchronous reset, write leveling, CRC, and ZQ calibration, all of which are required for stable high-speed operation in DDR5 subsystems.
Architecturally, this device belongs to Samsung's 16Gb DDR5 (B-die class) portfolio, which per Samsung extends data rates up to 7200 Mbps across 16 Gb and 32 Gb generations. The 1.1V VDD supply lowers dynamic power versus the 1.2V DDR4 generation, while bank-group parallelism sustains effective bandwidth at 4800 MT/s transfers.
Typical applications include DDR5 memory modules (SODIMM/UDIMM) for client PCs and notebooks, memory-down designs in industrial computing, and high-performance embedded systems where bandwidth and efficiency are critical.
Design consideration: DDR5 routing requires careful length matching, reference voltage tracking, and PMIC-based power sequencing; consult the full Samsung DDR5 device operation datasheet for timing and thermal guidance.
This page synthesizes distributor inventory, drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet, with pricing available via RFQ as of 2026-09-04.
Alternativas drop-in para K4RAH165VB-BIQK — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com K4RAH165VB-BIQK (mesmo formato e footprint) — diferindo em Data Rate, Package, Interface, Operating Temperature, RoHS Status.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
K4RAH165VB-BCQK
✅ Drop-In✓ Em estoque
Consulte o preço
Ver ficha técnica →K4RAH165VB-BCWM
✅ Drop-In✓ Em estoque
$9.92 / unidade
Ver ficha técnica →K4RAH086VB-BIQK
✅ Drop-In✓ Em estoque
$4.25 / unidade
Ver ficha técnica →K4RAH086VB-BCQK
✅ Drop-In✓ Em estoque
$41.0156 / unidade
Ver ficha técnica →K4RAH086VB-BCWM
✅ Drop-In✓ Em estoque
$44.5455 / unidade
Ver ficha técnica →K4RAH165VB-BIQK Classificações máximas e características elétricas
| Tipo de memória | DDR5 SDRAM |
| Density | 16 Gb |
| Organização da memória | 1G x 16 |
| Taxa de dados | 4800 Mbps (MT/s) |
| Supply Voltage (VDD) | 1.1 V |
| On-Die ECC | Yes |
| Auto Self-Refresh | Yes |
| Asynchronous Reset | Yes |
| Write Leveling | Yes |
| CRC Function | Yes |
| ZQ Calibration | Yes |
| DLL Enabled Mode | Yes (spec mode per datasheet) |
| Marca | Samsung Semiconductor |
Guia de Configuração de Pinos do K4RAH165VB-BIQK standard
Configuração de pinos para K4RAH165VB-BIQK (pacote standard). Este CI digital inclui GPIO, interfaces de comunicação (UART, SPI, I2C) e pinos de alimentação. Consulte o datasheet do fabricante para funções alternativas dos pinos e opções de configuração. Essencial para projeto de sistemas embarcados e layout de PCB.
Nenhum dado detalhado de pinagem disponível para K4RAH165VB-BIQK.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
K4RAH165VB-BIQK é adequado para 6 aplicaçãos: DDR5 Memory Modules (SODIMM/UDIMM), Client PC and Notebook Memory-Down, Industrial Computing and Edge Servers, High-Performance Computing Systems, Consumer Electronics and Set-Top Platforms, Networking and Communication Equipment.
DDR5 Memory Modules (SODIMM/UDIMM)
The K4RAH165VB-BIQK is a primary building block for next-generation DDR5 memory modules. Its 16 Gb density and 1G x16 organization match the standard IC population of DDR5 SODIMMs used in notebooks and small-form-factor PCs, while the 4800 Mbps data rate delivers the bandwidth headroom DDR5 platforms expect. On-die ECC improves module-level reliability without host overhead, and the 1.1 V operation supports the module PMIC power budget. Mounted on module PCBs, the device relies on the module's address/command bus termination and ZQ calibration for signal integrity at speed. Distributor data confirms K4RAH165VB devices are found on shipping notebook memory modules.
Recomendado
Client PC and Notebook Memory-Down
In motherboard memory-down designs, the K4RAH165VB-BIQK replaces SO-DIMM sockets with on-board DRAM, saving height and improving signal integrity. Its 16 Gb per-device density allows 8 GB to 16 GB system memory from a handful of components, and the BI industrial grade gives margin over commercial bins for thermally constrained notebook enclosures. The 4800 Mbps rate matches the JEDEC DDR5-4800 memory controller capability of current client SoCs, while 1.1 V VDD reduces platform power. Designers should follow Samsung's routing guidance for length-matched address/command and DQ fly-by topologies documented in the DDR5 device operation datasheet.
Recomendado
Industrial Computing and Edge Servers
Industrial PCs, edge servers, and factory automation controllers benefit from the BI (industrial) grade of the K4RAH165VB-BIQK, which offers qualification margin beyond commercial bins. DDR5's on-die ECC addresses soft-error reliability in electrically noisy factory environments, and the asynchronous reset feature enables deterministic recovery after brownout events. The 16 Gb density supports memory-hungry workloads such as machine-vision buffering and protocol processing, while 1.1 V operation eases thermal design in sealed fanless enclosures. DDR5's roughly 30% power-efficiency gain over DDR4 further reduces cooling requirements in conduction-cooled industrial systems.
Recomendado
High-Performance Computing Systems
The K4RAH165VB-BIQK serves high-performance computing systems where bandwidth and efficiency are critical, as noted in verified distributor documentation. At DDR5-4800, each x16 device contributes substantial per-pin bandwidth, and multi-channel memory controllers aggregate this into platform-level throughput for compute nodes. Samsung's DDR5 portfolio extends to 7200 Mbps and 32 Gb densities, giving designers an upgrade path on the same platform architecture. On-die ECC maintains data integrity under sustained full-bandwidth loads typical of scientific and AI workloads, and ZQ calibration plus write leveling keep DQ lines calibrated across dense multi-rank board layouts.
Recomendado
Consumer Electronics and Set-Top Platforms
Smart TVs, set-top boxes, and gaming peripherals moving to DDR5-class SoCs use 16 Gb x16 DDR5 devices like the K4RAH165VB-BIQK for main system memory. The 4800 Mbps rate supports 4K and 8K video frame buffering, and the 1G x16 organization aligns with the wide low-pin-count buses common in consumer SoCs. On-die ECC reduces display glitches from random bit errors, important in always-on video applications. The commercial-grade BCQK/BCWM variants of the same die allow cost optimization in consumer builds, while the BI grade of this part suits premium or thermally aggressive consumer products such as consoles.
Recomendado
Networking and Communication Equipment
Routers, switches, and 5G small-cell equipment require high-bandwidth packet buffering and control-plane memory, an area where the K4RAH165VB-BIQK fits well. Its 4800 Mbps data rate supports the sustained streaming workloads of packet buffers, while on-die ECC protects against uncorrected bit errors in telecom environments that demand carrier-grade uptime. The asynchronous reset input allows the system to recover the DRAM quickly after watchdog-triggered resets without full power cycling. The BI industrial temperature grade supports outdoor and unventilated telecom enclosures, and the 1.1 V rail integrates cleanly with modern low-voltage networking power trees.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para K4RAH165VB-BIQK — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | K4RAH165VB-BCQK | K4RAH165VB-BCWM | K4RAH086VB-BIQK |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 2G x 8 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Grade Suffix | BI (industrial class) | BC (commercial) | BC (commercial) | BI (industrial class) |
Principais diferenciais
- Industrial (BI) grade for extended qualification margin (vs K4RAH165VB-BCQK)
- DDR5 generation efficiency and bandwidth (vs K4A8G085WB)
- x16 bus width simplifies wide low-component-count buses (vs K4RAH086VB-BIQK)
Notas de projeto
DDR5-4800 operation leaves tight timing margins on address/command and DQ nets. Follow Samsung's device operation datasheet routing guidance: fly-by address/command topology with per-DIMM or per-device termination, length-matched DQ/DM/DQS within package skew allowances, and reference voltage (VDDQ) tracking. Enable write leveling and ZQ calibration during controller initialization; both are supported features of the K4RAH165VB family. Simulate eye diagrams at 4800 MT/s with the actual stackup before committing the PCB.
The K4RAH165VB-BIQK operates from a 1.1 V supply family typical of DDR5. DDR5 platforms require a dedicated PMIC (on modules per JEDEC, or on-board in memory-down designs) to supply and sequence VDD/VDDQ rails. Verify peak refresh current during all-bank auto-refresh bursts when sizing the power tree, and account for self-refresh current in low-power states. The 1.1 V generation improves efficiency roughly 30% over DDR4, but multi-rank designs still need solid plane allocation and bulk decoupling near each device.
Do not confuse family suffixes: K4RAH165VB (x16) and K4RAH086VB (x8) parts have different ballouts and are not interchangeable on the same footprint. Likewise, BI vs BC grade suffixes indicate different speed/temperature bins - verify the bin against your memory controller's supported timing table before substitution. Also note the UTTC-hosted K4RAH165VB datasheet is an abstract covering DLL-enabled mode only; common operational features are documented in Samsung's separate Device Operation datasheet, which should be read together with it.
Informações de conformidade
Compliance data not present in verified web data; consult Samsung Semiconductor's official product page and environmental reports for RoHS/REACH status.
