K4RAH165VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung
Артикул: K4RAH165VB-BIQK ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
K4RAH165VB-BIQK Обзор
DDR5 SDRAM is the fifth generation of double-data-rate synchronous dynamic random-access memory. It succeeds DDR4 by delivering higher bandwidth, greater on-die capacities, and roughly 30% better power efficiency per bit. A DDR5 device integrates its own power management architecture, on-die ECC, and decision-feedback equalization to maintain signal integrity at multi-gigabit data rates, making DDR5 the foundation of the memory hierarchy in modern computing platforms.
Key features of the K4RAH165VB-BIQK include its 16 Gb density in a x16 bus width configuration, DDR5-4800 operation, and an industrial temperature rating implied by the BI speed/temp code suffix. On-chip error correction code (ECC) improves reliability by detecting and correcting internal bit errors without host overhead. Supporting functions documented for the K4RAH165VB family include auto self-refresh, asynchronous reset, write leveling, CRC, and ZQ calibration, all of which are required for stable high-speed operation in DDR5 subsystems.
Architecturally, this device belongs to Samsung's 16Gb DDR5 (B-die class) portfolio, which per Samsung extends data rates up to 7200 Mbps across 16 Gb and 32 Gb generations. The 1.1V VDD supply lowers dynamic power versus the 1.2V DDR4 generation, while bank-group parallelism sustains effective bandwidth at 4800 MT/s transfers.
Typical applications include DDR5 memory modules (SODIMM/UDIMM) for client PCs and notebooks, memory-down designs in industrial computing, and high-performance embedded systems where bandwidth and efficiency are critical.
Design consideration: DDR5 routing requires careful length matching, reference voltage tracking, and PMIC-based power sequencing; consult the full Samsung DDR5 device operation datasheet for timing and thermal guidance.
This page synthesizes distributor inventory, drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet, with pricing available via RFQ as of 2026-09-04.
Аналоги без доработки для K4RAH165VB-BIQK — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с K4RAH165VB-BIQK (тот же форм-фактор и посадочное место) — отличается по Data Rate, Package, Interface, Operating Temperature, RoHS Status.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
K4RAH165VB-BCQK
✅ Прямая замена✓ В наличии
Уточнить цену
Открыть даташит →K4RAH165VB-BCWM
✅ Прямая замена✓ В наличии
$9.92 / шт.
Открыть даташит →K4RAH086VB-BIQK
✅ Прямая замена✓ В наличии
$4.25 / шт.
Открыть даташит →K4RAH086VB-BCQK
✅ Прямая замена✓ В наличии
$41.0156 / шт.
Открыть даташит →K4RAH086VB-BCWM
✅ Прямая замена✓ В наличии
$44.5455 / шт.
Открыть даташит →K4RAH165VB-BIQK Максимальные параметры и электрические характеристики
| Тип памяти | DDR5 SDRAM |
| Density | 16 Gb |
| Организация памяти | 1G x 16 |
| Скорость передачи данных | 4800 Mbps (MT/s) |
| Supply Voltage (VDD) | 1.1 V |
| On-Die ECC | Yes |
| Auto Self-Refresh | Yes |
| Asynchronous Reset | Yes |
| Write Leveling | Yes |
| CRC Function | Yes |
| ZQ Calibration | Yes |
| DLL Enabled Mode | Yes (spec mode per datasheet) |
| Бренд | Samsung Semiconductor |
Руководство по цоколевке K4RAH165VB-BIQK в корпусе standard
Цоколевка для K4RAH165VB-BIQK (корпус standard). Эта цифровая ИС включает выводы GPIO, интерфейсы связи (UART, SPI, I2C) и выводы питания. Обратитесь к техническому описанию производителя для альтернативных функций выводов и вариантов конфигурации. Необходимо для проектирования встраиваемых систем и трассировки печатных плат.
Нет подробных данных о распиновке для K4RAH165VB-BIQK.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
K4RAH165VB-BIQK подходит для 6 применениеs: DDR5 Memory Modules (SODIMM/UDIMM), Client PC and Notebook Memory-Down, Industrial Computing and Edge Servers, High-Performance Computing Systems, Consumer Electronics and Set-Top Platforms, Networking and Communication Equipment.
DDR5 Memory Modules (SODIMM/UDIMM)
The K4RAH165VB-BIQK is a primary building block for next-generation DDR5 memory modules. Its 16 Gb density and 1G x16 organization match the standard IC population of DDR5 SODIMMs used in notebooks and small-form-factor PCs, while the 4800 Mbps data rate delivers the bandwidth headroom DDR5 platforms expect. On-die ECC improves module-level reliability without host overhead, and the 1.1 V operation supports the module PMIC power budget. Mounted on module PCBs, the device relies on the module's address/command bus termination and ZQ calibration for signal integrity at speed. Distributor data confirms K4RAH165VB devices are found on shipping notebook memory modules.
Рекомендуется
Client PC and Notebook Memory-Down
In motherboard memory-down designs, the K4RAH165VB-BIQK replaces SO-DIMM sockets with on-board DRAM, saving height and improving signal integrity. Its 16 Gb per-device density allows 8 GB to 16 GB system memory from a handful of components, and the BI industrial grade gives margin over commercial bins for thermally constrained notebook enclosures. The 4800 Mbps rate matches the JEDEC DDR5-4800 memory controller capability of current client SoCs, while 1.1 V VDD reduces platform power. Designers should follow Samsung's routing guidance for length-matched address/command and DQ fly-by topologies documented in the DDR5 device operation datasheet.
Рекомендуется
Industrial Computing and Edge Servers
Industrial PCs, edge servers, and factory automation controllers benefit from the BI (industrial) grade of the K4RAH165VB-BIQK, which offers qualification margin beyond commercial bins. DDR5's on-die ECC addresses soft-error reliability in electrically noisy factory environments, and the asynchronous reset feature enables deterministic recovery after brownout events. The 16 Gb density supports memory-hungry workloads such as machine-vision buffering and protocol processing, while 1.1 V operation eases thermal design in sealed fanless enclosures. DDR5's roughly 30% power-efficiency gain over DDR4 further reduces cooling requirements in conduction-cooled industrial systems.
Рекомендуется
High-Performance Computing Systems
The K4RAH165VB-BIQK serves high-performance computing systems where bandwidth and efficiency are critical, as noted in verified distributor documentation. At DDR5-4800, each x16 device contributes substantial per-pin bandwidth, and multi-channel memory controllers aggregate this into platform-level throughput for compute nodes. Samsung's DDR5 portfolio extends to 7200 Mbps and 32 Gb densities, giving designers an upgrade path on the same platform architecture. On-die ECC maintains data integrity under sustained full-bandwidth loads typical of scientific and AI workloads, and ZQ calibration plus write leveling keep DQ lines calibrated across dense multi-rank board layouts.
Рекомендуется
Consumer Electronics and Set-Top Platforms
Smart TVs, set-top boxes, and gaming peripherals moving to DDR5-class SoCs use 16 Gb x16 DDR5 devices like the K4RAH165VB-BIQK for main system memory. The 4800 Mbps rate supports 4K and 8K video frame buffering, and the 1G x16 organization aligns with the wide low-pin-count buses common in consumer SoCs. On-die ECC reduces display glitches from random bit errors, important in always-on video applications. The commercial-grade BCQK/BCWM variants of the same die allow cost optimization in consumer builds, while the BI grade of this part suits premium or thermally aggressive consumer products such as consoles.
Рекомендуется
Networking and Communication Equipment
Routers, switches, and 5G small-cell equipment require high-bandwidth packet buffering and control-plane memory, an area where the K4RAH165VB-BIQK fits well. Its 4800 Mbps data rate supports the sustained streaming workloads of packet buffers, while on-die ECC protects against uncorrected bit errors in telecom environments that demand carrier-grade uptime. The asynchronous reset input allows the system to recover the DRAM quickly after watchdog-triggered resets without full power cycling. The BI industrial temperature grade supports outdoor and unventilated telecom enclosures, and the 1.1 V rail integrates cleanly with modern low-voltage networking power trees.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для K4RAH165VB-BIQK — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | K4RAH165VB-BCQK | K4RAH165VB-BCWM | K4RAH086VB-BIQK |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 2G x 8 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Grade Suffix | BI (industrial class) | BC (commercial) | BC (commercial) | BI (industrial class) |
Ключевые отличия
- Industrial (BI) grade for extended qualification margin (против K4RAH165VB-BCQK)
- DDR5 generation efficiency and bandwidth (против K4A8G085WB)
- x16 bus width simplifies wide low-component-count buses (против K4RAH086VB-BIQK)
Заметки по проектированию
DDR5-4800 operation leaves tight timing margins on address/command and DQ nets. Follow Samsung's device operation datasheet routing guidance: fly-by address/command topology with per-DIMM or per-device termination, length-matched DQ/DM/DQS within package skew allowances, and reference voltage (VDDQ) tracking. Enable write leveling and ZQ calibration during controller initialization; both are supported features of the K4RAH165VB family. Simulate eye diagrams at 4800 MT/s with the actual stackup before committing the PCB.
The K4RAH165VB-BIQK operates from a 1.1 V supply family typical of DDR5. DDR5 platforms require a dedicated PMIC (on modules per JEDEC, or on-board in memory-down designs) to supply and sequence VDD/VDDQ rails. Verify peak refresh current during all-bank auto-refresh bursts when sizing the power tree, and account for self-refresh current in low-power states. The 1.1 V generation improves efficiency roughly 30% over DDR4, but multi-rank designs still need solid plane allocation and bulk decoupling near each device.
Do not confuse family suffixes: K4RAH165VB (x16) and K4RAH086VB (x8) parts have different ballouts and are not interchangeable on the same footprint. Likewise, BI vs BC grade suffixes indicate different speed/temperature bins - verify the bin against your memory controller's supported timing table before substitution. Also note the UTTC-hosted K4RAH165VB datasheet is an abstract covering DLL-enabled mode only; common operational features are documented in Samsung's separate Device Operation datasheet, which should be read together with it.
Информация о соответствии
Compliance data not present in verified web data; consult Samsung Semiconductor's official product page and environmental reports for RoHS/REACH status.
