MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron
N.º da peça: MT40A512M16LY-075:E ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $7.95 | $7,95 |
| 10 | $7.5 | $75,00 |
| 100 | $6.8 | $680,00 |
| 500 | $6.2 | $3.100,00 |
| 1.000 | $5.8 | $5.800,00 |
MT40A512M16LY-075:E Visão geral
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, and laptops, offering higher bandwidth and lower power consumption than its predecessors. DDR4 operates at lower voltages (1.2V vs 1.5V for DDR3), reducing power dissipation and enabling higher density modules.
Key features include on-die, internal, adjustable VREFDQ generation for improved signal integrity, 1.2V pseudo open-drain I/O for compatibility with modern controllers, and a refresh time of 8192 cycles with temperature-dependent refresh rates: 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C to 105°C. The device supports auto self-refresh, auto precharge, write leveling, dynamic on-chip termination (DTC), CRC function, and data mask function, ensuring reliable operation in high-speed systems.
The MT40A512M16LY-075:E is designed for high-bandwidth applications such as enterprise servers, networking equipment, and high-performance computing. Its 16-bit data bus and 8Gb density make it suitable for memory modules (DIMMs) and embedded systems requiring large memory capacity. The device is compliant with JEDEC DDR4 standards and is RoHS compliant.
When designing with this component, ensure proper decoupling of VDD and VDDQ with 0.1uF and 1uF capacitors placed close to the pins. The VPP supply must be clean and within 2.5V ±250mV. Follow Micron's layout guidelines for DDR4 routing to maintain signal integrity at 2666 MT/s.
Alternativas drop-in para MT40A512M16LY-075:E — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com MT40A512M16LY-075:E (mesmo formato e footprint) — diferindo em Package, Data Rate, Memory Size, Clock Frequency, Features.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MT40A512M16JY-075E
✅ Drop-In✓ Em estoque
$30.5 / unidade
Ver ficha técnica →MT40A512M16LY-062E
✅ Drop-In✓ Em estoque
$6.65 / unidade
Ver ficha técnica →MT40A512M16TB-062E
✅ Drop-In✓ Em estoque
$60 / unidade
Ver ficha técnica →AS4C512M16D4A-62BCN
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$7.2 / unidade
Ver ficha técnica →K4A8G165WB-BCWE
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$6.55 / unidade
Ver ficha técnica →H5AN8G6NDJR-XNC
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$55.6818 / unidade
Ver ficha técnica →MT40A512M16LY-075:E Classificações máximas e características elétricas
| Tipo de memória | DDR4 SDRAM |
| Tamanho da memória | 8 Gbit (512M x 16) |
| Taxa de dados | 2666 MT/s |
| Clock Frequency | 1.33 GHz |
| Latência CAS | 19 |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV |
| VPP Supply | 2.5V (-125mV, +250mV) |
| Interface | Parallel |
| Encapsulamento | 96-FBGA (7.5x13.5mm) |
| Faixa de temperatura de operação | 0°C to +95°C |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Internal Banks (x16) | 8 banks (4 groups of 2) |
| I/O Type | 1.2V pseudo open-drain |
| RoHS | Compliant |
| Tipo de montagem | Surface Mount |
Configuração de pinos do MT40A512M16LY-075:E
| Pino A1 | VDD — Power supply (1.2V) |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | VSS — Ground |
| Pino B1 | DQ1 — Data input/output 1 |
| Pino B2 | VDDQ — I/O power supply (1.2V) |
| Pino B3 | DQ2 — Data input/output 2 |
| Pino C1 | DQ3 — Data input/output 3 |
| Pino C2 | VSSQ — I/O ground |
| Pino C3 | DQ4 — Data input/output 4 |
| Pino D1 | DQ5 — Data input/output 5 |
| Pino D2 | VDD — Power supply (1.2V) |
| Pino D3 | DQ6 — Data input/output 6 |
| Pino E1 | DQ7 — Data input/output 7 |
| Pino E2 | VSS — Ground |
| Pino E3 | DQS0 — Data strobe 0 |
| Pino F1 | DQS0# — Data strobe 0 complement |
| Pino F2 | VDDQ — I/O power supply (1.2V) |
| Pino F3 | DM0 — Data mask 0 |
| Pino G1 | A0 — Address input 0 |
| Pino G2 | A1 — Address input 1 |
| Pino G3 | A2 — Address input 2 |
| Pino H1 | A3 — Address input 3 |
| Pino H2 | A4 — Address input 4 |
| Pino H3 | A5 — Address input 5 |
| Pino J1 | A6 — Address input 6 |
| Pino J2 | A7 — Address input 7 |
| Pino J3 | A8 — Address input 8 |
| Pino K1 | A9 — Address input 9 |
| Pino K2 | A10/AP — Address input 10 / Auto-precharge |
| Pino K3 | A11 — Address input 11 |
| Pino L1 | A12 — Address input 12 |
| Pino L2 | A13 — Address input 13 |
| Pino L3 | A14 — Address input 14 |
| Pino M1 | A15 — Address input 15 |
| Pino M2 | BA0 — Bank address 0 |
| Pino M3 | BA1 — Bank address 1 |
| Pino N1 | BA2 — Bank address 2 |
| Pino N2 | BG0 — Bank group 0 |
| Pino N3 | BG1 — Bank group 1 |
| Pino P1 | CK — Clock input |
| Pino P2 | CK# — Clock input complement |
| Pino P3 | CKE — Clock enable |
| Pino R1 | CS# — Chip select |
| Pino R2 | ODT — On-die termination |
| Pino R3 | RAS# — Row address strobe |
| Pino T1 | CAS# — Column address strobe |
| Pino T2 | WE# — Write enable |
| Pino T3 | RESET# — Reset |
| Pino U1 | VPP — Wordline boost supply (2.5V) |
| Pino U2 | VDD — Power supply (1.2V) |
| Pino U3 | VSS — Ground |
Aplicações típicas
MT40A512M16LY-075:E é adequado para 6 aplicaçãos: Enterprise Servers, Networking Equipment, High-Performance Computing, Embedded Systems, Data Center Storage, Telecommunications.
Enterprise Servers
The MT40A512M16LY-075:E provides 8Gb density and 2666 MT/s bandwidth, making it ideal for server main memory. Its low 1.2V operation reduces power consumption in data centers, while the 16-bit bus width allows flexible module configurations. The device supports ECC and CRC functions for reliable data integrity in mission-critical workloads.
Recomendado
Networking Equipment
In routers and switches, the MT40A512M16LY-075:E offers high bandwidth for packet buffering and forwarding tables. Its 2666 MT/s data rate ensures low latency, while the 8Gb density supports large routing tables. The device's on-die termination and write leveling features improve signal integrity in high-speed backplanes.
Recomendado
High-Performance Computing
For HPC applications, the MT40A512M16LY-075:E provides the memory bandwidth needed for complex simulations and data analysis. Its 8Gb density allows large datasets to be held in memory, reducing I/O bottlenecks. The device's low power consumption is beneficial in large clusters where cooling is a concern.
Recomendado
Embedded Systems
The MT40A512M16LY-075:E is suitable for embedded systems requiring large memory, such as industrial controllers and medical devices. Its 96-ball FBGA package is compact, and the 1.2V operation reduces heat generation. The device supports a wide temperature range (0°C to +95°C), making it reliable in harsh environments.
Recomendado
Data Center Storage
In storage systems, the MT40A512M16LY-075:E is used for caching and metadata storage. Its high bandwidth accelerates read/write operations, while the 8Gb density supports large cache pools. The device's low power consumption is critical in storage arrays where many memory devices are used.
Recomendado
Telecommunications
The MT40A512M16LY-075:E is used in telecom base stations and switches for buffering and protocol processing. Its 2666 MT/s data rate handles high-throughput traffic, and the 8Gb density supports large connection tables. The device's reliability features, such as CRC and data mask, ensure error-free operation in carrier-grade equipment.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MT40A512M16LY-075:E — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MT40A512M16JY-075E | MT40A512M16LY-062E | AS4C512M16D4A-62BCN | K4A8G165WB-BCWE |
|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | Samsung Electronics |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Data Rate | 2666 MT/s | 2666 MT/s | 3200 MT/s | 3200 MT/s | 2666 MT/s |
| CAS Latency | 19 | 19 | 22 | 22 | 19 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Lifecycle Status | Active | Active | End of Life | Active | Active |
Principais diferenciais
- Active lifecycle status (vs MT40A512M16LY-062E)
- Lower speed grade for cost optimization (vs AS4C512M16D4A-62BCN)
- Same-brand drop-in compatibility (vs K4A8G165WB-BCWE)
Notas de projeto
Ensure VDD and VDDQ are clean and within 1.2V ±60mV. Use 0.1uF and 1uF ceramic capacitors placed close to each VDD/VDDQ pin to decouple high-frequency noise. The VPP supply (2.5V) must be stable and within -125mV/+250mV; use a dedicated regulator if necessary.
Follow Micron's DDR4 layout guidelines for signal integrity. Route DQ, DQS, and address/control lines with controlled impedance (typically 40-50 ohms). Keep trace lengths matched within 100 mils for DQ/DQS groups. Place termination resistors for address/control signals if required by the controller.
The MT40A512M16LY-075:E operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-ball FBGA package has a thermal resistance that depends on PCB copper area; use thermal vias under the package to improve heat dissipation.
Informações de conformidade
RoHS compliance indicated in datasheet. Other compliance details not specified in provided data.
