MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron
Артикул: MT40A512M16LY-075:E ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $7.95 | $7,95 |
| 10 | $7.5 | $75,00 |
| 100 | $6.8 | $680,00 |
| 500 | $6.2 | $3.100,00 |
| 1.000 | $5.8 | $5.800,00 |
MT40A512M16LY-075:E Обзор
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, and laptops, offering higher bandwidth and lower power consumption than its predecessors. DDR4 operates at lower voltages (1.2V vs 1.5V for DDR3), reducing power dissipation and enabling higher density modules.
Key features include on-die, internal, adjustable VREFDQ generation for improved signal integrity, 1.2V pseudo open-drain I/O for compatibility with modern controllers, and a refresh time of 8192 cycles with temperature-dependent refresh rates: 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C to 105°C. The device supports auto self-refresh, auto precharge, write leveling, dynamic on-chip termination (DTC), CRC function, and data mask function, ensuring reliable operation in high-speed systems.
The MT40A512M16LY-075:E is designed for high-bandwidth applications such as enterprise servers, networking equipment, and high-performance computing. Its 16-bit data bus and 8Gb density make it suitable for memory modules (DIMMs) and embedded systems requiring large memory capacity. The device is compliant with JEDEC DDR4 standards and is RoHS compliant.
When designing with this component, ensure proper decoupling of VDD and VDDQ with 0.1uF and 1uF capacitors placed close to the pins. The VPP supply must be clean and within 2.5V ±250mV. Follow Micron's layout guidelines for DDR4 routing to maintain signal integrity at 2666 MT/s.
Аналоги без доработки для MT40A512M16LY-075:E — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MT40A512M16LY-075:E (тот же форм-фактор и посадочное место) — отличается по Package, Data Rate, Memory Size, Clock Frequency, Operating Temperature Range.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MT40A512M16JY-075E
✅ Прямая замена✓ В наличии
$30.5 / шт.
Открыть даташит →MT40A512M16LY-062E
✅ Прямая замена✓ В наличии
$6.65 / шт.
Открыть даташит →MT40A512M16TB-062E
✅ Прямая замена✓ В наличии
$60 / шт.
Открыть даташит →AS4C512M16D4A-62BCN
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$7.2 / шт.
Открыть даташит →K4A8G165WB-BCWE
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$6.55 / шт.
Открыть даташит →H5AN8G6NDJR-XNC
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$55.6818 / шт.
Открыть даташит →MT40A512M16LY-075:E Максимальные параметры и электрические характеристики
| Тип памяти | DDR4 SDRAM |
| Размер памяти | 8 Gbit (512M x 16) |
| Скорость передачи данных | 2666 MT/s |
| Clock Frequency | 1.33 GHz |
| Задержка CAS | 19 |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV |
| VPP Supply | 2.5V (-125mV, +250mV) |
| Интерфейс | Parallel |
| Корпус | 96-FBGA (7.5x13.5mm) |
| Диапазон рабочих температур | 0°C to +95°C |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Internal Banks (x16) | 8 banks (4 groups of 2) |
| I/O Type | 1.2V pseudo open-drain |
| RoHS | Compliant |
| Тип монтажа | Surface Mount |
Конфигурация выводов MT40A512M16LY-075:E
| Контакт A1 | VDD — Power supply (1.2V) |
| Контакт A2 | DQ0 — Data input/output 0 |
| Контакт A3 | VSS — Ground |
| Контакт B1 | DQ1 — Data input/output 1 |
| Контакт B2 | VDDQ — I/O power supply (1.2V) |
| Контакт B3 | DQ2 — Data input/output 2 |
| Контакт C1 | DQ3 — Data input/output 3 |
| Контакт C2 | VSSQ — I/O ground |
| Контакт C3 | DQ4 — Data input/output 4 |
| Контакт D1 | DQ5 — Data input/output 5 |
| Контакт D2 | VDD — Power supply (1.2V) |
| Контакт D3 | DQ6 — Data input/output 6 |
| Контакт E1 | DQ7 — Data input/output 7 |
| Контакт E2 | VSS — Ground |
| Контакт E3 | DQS0 — Data strobe 0 |
| Контакт F1 | DQS0# — Data strobe 0 complement |
| Контакт F2 | VDDQ — I/O power supply (1.2V) |
| Контакт F3 | DM0 — Data mask 0 |
| Контакт G1 | A0 — Address input 0 |
| Контакт G2 | A1 — Address input 1 |
| Контакт G3 | A2 — Address input 2 |
| Контакт H1 | A3 — Address input 3 |
| Контакт H2 | A4 — Address input 4 |
| Контакт H3 | A5 — Address input 5 |
| Контакт J1 | A6 — Address input 6 |
| Контакт J2 | A7 — Address input 7 |
| Контакт J3 | A8 — Address input 8 |
| Контакт K1 | A9 — Address input 9 |
| Контакт K2 | A10/AP — Address input 10 / Auto-precharge |
| Контакт K3 | A11 — Address input 11 |
| Контакт L1 | A12 — Address input 12 |
| Контакт L2 | A13 — Address input 13 |
| Контакт L3 | A14 — Address input 14 |
| Контакт M1 | A15 — Address input 15 |
| Контакт M2 | BA0 — Bank address 0 |
| Контакт M3 | BA1 — Bank address 1 |
| Контакт N1 | BA2 — Bank address 2 |
| Контакт N2 | BG0 — Bank group 0 |
| Контакт N3 | BG1 — Bank group 1 |
| Контакт P1 | CK — Clock input |
| Контакт P2 | CK# — Clock input complement |
| Контакт P3 | CKE — Clock enable |
| Контакт R1 | CS# — Chip select |
| Контакт R2 | ODT — On-die termination |
| Контакт R3 | RAS# — Row address strobe |
| Контакт T1 | CAS# — Column address strobe |
| Контакт T2 | WE# — Write enable |
| Контакт T3 | RESET# — Reset |
| Контакт U1 | VPP — Wordline boost supply (2.5V) |
| Контакт U2 | VDD — Power supply (1.2V) |
| Контакт U3 | VSS — Ground |
Типичное применение
MT40A512M16LY-075:E подходит для 6 применениеs: Enterprise Servers, Networking Equipment, High-Performance Computing, Embedded Systems, Data Center Storage, Telecommunications.
Enterprise Servers
The MT40A512M16LY-075:E provides 8Gb density and 2666 MT/s bandwidth, making it ideal for server main memory. Its low 1.2V operation reduces power consumption in data centers, while the 16-bit bus width allows flexible module configurations. The device supports ECC and CRC functions for reliable data integrity in mission-critical workloads.
Рекомендуется
Networking Equipment
In routers and switches, the MT40A512M16LY-075:E offers high bandwidth for packet buffering and forwarding tables. Its 2666 MT/s data rate ensures low latency, while the 8Gb density supports large routing tables. The device's on-die termination and write leveling features improve signal integrity in high-speed backplanes.
Рекомендуется
High-Performance Computing
For HPC applications, the MT40A512M16LY-075:E provides the memory bandwidth needed for complex simulations and data analysis. Its 8Gb density allows large datasets to be held in memory, reducing I/O bottlenecks. The device's low power consumption is beneficial in large clusters where cooling is a concern.
Рекомендуется
Embedded Systems
The MT40A512M16LY-075:E is suitable for embedded systems requiring large memory, such as industrial controllers and medical devices. Its 96-ball FBGA package is compact, and the 1.2V operation reduces heat generation. The device supports a wide temperature range (0°C to +95°C), making it reliable in harsh environments.
Рекомендуется
Data Center Storage
In storage systems, the MT40A512M16LY-075:E is used for caching and metadata storage. Its high bandwidth accelerates read/write operations, while the 8Gb density supports large cache pools. The device's low power consumption is critical in storage arrays where many memory devices are used.
Рекомендуется
Telecommunications
The MT40A512M16LY-075:E is used in telecom base stations and switches for buffering and protocol processing. Its 2666 MT/s data rate handles high-throughput traffic, and the 8Gb density supports large connection tables. The device's reliability features, such as CRC and data mask, ensure error-free operation in carrier-grade equipment.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MT40A512M16LY-075:E — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MT40A512M16JY-075E | MT40A512M16LY-062E | AS4C512M16D4A-62BCN | K4A8G165WB-BCWE |
|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | Samsung Electronics |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Data Rate | 2666 MT/s | 2666 MT/s | 3200 MT/s | 3200 MT/s | 2666 MT/s |
| CAS Latency | 19 | 19 | 22 | 22 | 19 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Lifecycle Status | Active | Active | End of Life | Active | Active |
Ключевые отличия
- Active lifecycle status (против MT40A512M16LY-062E)
- Lower speed grade for cost optimization (против AS4C512M16D4A-62BCN)
- Same-brand drop-in compatibility (против K4A8G165WB-BCWE)
Заметки по проектированию
Ensure VDD and VDDQ are clean and within 1.2V ±60mV. Use 0.1uF and 1uF ceramic capacitors placed close to each VDD/VDDQ pin to decouple high-frequency noise. The VPP supply (2.5V) must be stable and within -125mV/+250mV; use a dedicated regulator if necessary.
Follow Micron's DDR4 layout guidelines for signal integrity. Route DQ, DQS, and address/control lines with controlled impedance (typically 40-50 ohms). Keep trace lengths matched within 100 mils for DQ/DQS groups. Place termination resistors for address/control signals if required by the controller.
The MT40A512M16LY-075:E operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-ball FBGA package has a thermal resistance that depends on PCB copper area; use thermal vias under the package to improve heat dissipation.
Информация о соответствии
RoHS compliance indicated in datasheet. Other compliance details not specified in provided data.
