2EP101RXTMA1 - 5W Full-Bridge Transformer Driver IC | Infineon
Артикул: 2EP101RXTMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.92 | $1,92 |
| 10 | $1.74 | $17,40 |
| 100 | $1.45 | $145,00 |
| 500 | $1.22 | $610,00 |
| 1.000 | $1.05 | $1.050,00 |
| 3.000 | $0.88 | $2.640,00 |
2EP101RXTMA1 Обзор
A transformer driver is a specialized PMIC category that uses switching action on the primary side of an isolation transformer to produce an isolated, regulated low-voltage rail on the secondary side. In the broader power management taxonomy, the 2EP101RXTMA1 sits below discrete gate driver ICs and above simple DC-DC flyback controllers, filling the niche of compact isolated bias generation for gate drive stages. Because IGBT and SiC gate drive supplies must float with the switching node, galvanic isolation is mandatory, and the 2EP101RXTMA1 provides this through an external low-cost transformer rather than a digital isolator.
The 2EP101RXTMA1 delivers up to 5 W of output power from a 5 V to 20 V supply, supports a wide operating temperature range of -40 °C to +125 °C, and consumes a typical quiescent current in the microamp range to preserve system efficiency. Its adjustable frequency/duty combination allows the designer to trade off transformer size against EMI signature, and internal shoot-through protection prevents cross-conduction of the H-bridge during switching transitions. The TSSOP-8 footprint and minimal external BOM (one transformer, a few ceramic capacitors, two rectifier diodes) make it a compact alternative to discrete flyback or push-pull bias circuits.
Architecture-wise, the part is a monolithic CMOS controller plus four integrated N-channel power MOSFETs forming a self-oscillating or externally-clocked full bridge. Its primary differentiation versus other gate-bias approaches (such as bootstrap capacitors or integrated digital isolators) is that it delivers continuous bipolar isolated power, enabling reliable negative gate drive bias that prevents parasitic turn-on of SiC MOSFETs in half-bridge topologies.
Typical applications include isolated gate driver supplies for industrial motor drives, photovoltaic inverters, uninterruptible power supplies, EV traction inverters, and SiC-based DC fast chargers. Any application that uses high-side IGBT or SiC switches in a half-bridge or three-phase inverter will benefit from its compact isolated bias solution. Designers should pay attention to transformer leakage inductance, snubber sizing across the H-bridge outputs, and PCB creepage/clearance when routing the primary-secondary boundary.
Аналоги без доработки для 2EP101RXTMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с 2EP101RXTMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Topology, Number of Outputs, Operating Temperature Range, Output Configuration.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
2EP130RXTMA1
✅ Прямая замена✓ В наличии
$1.2 / шт.
Открыть даташит →2EP101R
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
1ED3142MC12HXUMA1
✅ Прямая замена✓ В наличии
$1.32 / шт.
Открыть даташит →2EP101RXTMA1 Максимальные параметры и электрические характеристики
| Product Type | Full-Bridge Transformer Driver PMIC |
| Топология | Full-bridge (H-bridge) with external transformer |
| Supply Voltage Range | 5 V to 20 V |
| Maximum Output Power | 5 W |
| Switching Frequency Option 1 | 50 kHz |
| Switching Frequency Option 2 | 65 kHz |
| Duty Cycle Option 1 | 12% |
| Duty Cycle Option 2 | 17% |
| Количество выходов | 1 (full-bridge differential primary) |
| Корпус | PG-TSSOP-8 |
| Тип монтажа | Surface Mount |
| Диапазон рабочих температур | -40 °C to +125 °C |
| Primary Application | Isolated IGBT and SiC MOSFET gate driver supply |
| RoHS Compliance | Compliant |
| Delivery Form | Tape and Reel (XT suffix) |
Конфигурация выводов 2EP101RXTMA1
| Контакт 1 | VDDA — 5 V to 20 V supply input for the analog and gate drive circuitry |
| Контакт 2 | GND — Analog signal ground |
| Контакт 3 | FSET — Frequency select: logic-low = 50 kHz, logic-high = 65 kHz (per datasheet) |
| Контакт 4 | DUTY — Duty cycle select: logic-low = 12%, logic-high = 17% |
| Контакт 5 | OUTB — Half-bridge output B (drives one side of the center-tapped transformer primary) |
| Контакт 6 | PGND — Power ground for the H-bridge output stage |
| Контакт 7 | OUTA — Half-bridge output A (drives the other side of the transformer primary) |
| Контакт 8 | EN — Enable input (active-high); pull low to put the device in low-Iq shutdown |
Типичное применение
2EP101RXTMA1 подходит для 7 применениеs: Isolated SiC MOSFET Gate Drive Supply, Industrial Motor Drive IGBT Bias, Photovoltaic String Inverter Auxiliary Supply, Uninterruptible Power Supply (UPS) IGBT Bias, EV Traction Inverter Auxiliary Bias, DC Fast Charger SiC Output Stage, Solar Microinverter Isolated Bias.
Isolated SiC MOSFET Gate Drive Supply
The 2EP101RXTMA1 is purpose-built for isolated SiC MOSFET gate driver supplies in high-voltage half-bridge topologies. Its full-bridge output drives a small center-tapped transformer at 50/65 kHz to generate the +18 V/-3 V bipolar rails required by SiC gate drivers, with up to 5 W of output power sufficient for one to three paralleled SiC switches. The -3 V negative bias prevents parasitic turn-on caused by the SiC MOSFET's low threshold voltage and high dv/dt, a critical reliability feature. Designers pair this PMIC with Infineon 1ED3142MC12H or TI UCC21750 isolated gate drivers to form a complete isolated SiC half-bridge bias solution occupying less than 1 square inch of PCB area.
Рекомендуется
Industrial Motor Drive IGBT Bias
Three-phase industrial motor drives using IGBT modules require isolated +15 V/-8 V gate drive supplies for each high-side switch, traditionally built from discrete push-pull transformers and linear regulators. The 2EP101RXTMA1 replaces that bulky discrete circuit with one 5 W full-bridge PMIC plus a small SMT transformer, reducing the bias supply footprint by roughly 60%. Its 50/65 kHz selectable frequency allows optimisation between transformer size and EMI signature, while the wide 5 V to 20 V input range accepts both 12 V and 24 V industrial bus rails directly. The exposed thermal pad of the TSSOP-8 package handles the full 5 W dissipation without an external heatsink.
Рекомендуется
Photovoltaic String Inverter Auxiliary Supply
Photovoltaic string inverters need isolated auxiliary power rails to bias the gate drivers of their high-voltage DC-side IGBTs or SiC MOSFETs, where the switching node floats at up to 1500 V DC. The 2EP101RXTMA1's transformer-based isolation easily meets the 4 mm PCB creepage requirement between primary and secondary, and its 5 W output is enough to bias an entire three-phase IGBT module's gate drivers. The -40 °C to +125 °C operating range covers outdoor inverter ambient conditions, and the TSSOP-8 package withstands the high-humidity potting compounds common in solar applications. Adding one 2EP101RXTMA1 per inverter section is a cost-effective way to eliminate a discrete isolated DC-DC module.
Рекомендуется
Uninterruptible Power Supply (UPS) IGBT Bias
Online UPS systems in the 1 kW to 10 kW power range use IGBT half-bridges in their inverter stage and require reliable isolated gate drive supplies that survive load transients and short-circuit events. The 2EP101RXTMA1's adjustable duty cycle (12%/17%) lets the designer optimise the transformer's volt-second balance for the UPS's specific switching frequency, while its internal shoot-through protection prevents H-bridge cross-conduction that could otherwise destroy the IC during fault conditions. Its 5 W output comfortably supplies multiple paralleled gate driver ICs, and the wide supply range accepts the UPS's 12 V or 24 V battery-derived rail directly. The TSSOP-8's small footprint is critical in dense UPS PCB layouts.
Рекомендуется
EV Traction Inverter Auxiliary Bias
Electric vehicle traction inverters in the 100 kW to 300 kW range use SiC MOSFET power modules with isolated gate drive supplies on each phase leg, where reliability and small PCB area are critical. The 2EP101RXTMA1's automotive-grade temperature range and small TSSOP-8 footprint suit the inverter's densely packed control PCB, and its 5 W output biases the +18 V/-3 V rails needed by modern SiC gate drivers. Combined with AEC-Q100-qualified companion drivers like the 1ED3142MC12HXUMA1, it forms an automotive-qualified isolated gate drive bias solution. Designers often place one 2EP101RXTMA1 per phase leg to maintain isolation integrity and minimise fault propagation.
Рекомендуется
DC Fast Charger SiC Output Stage
DC fast chargers for electric vehicles use high-voltage SiC MOSFET half-bridges in their PFC and isolated DC-DC stages, each requiring a compact isolated gate drive supply. The 2EP101RXTMA1's 5 W output, 5-20 V supply range and bipolar transformer drive are tailored exactly for this use case, replacing discrete push-pull bias circuits that consume 3-4x the PCB area. Its selectable 50/65 kHz frequency allows the designer to place the switching harmonics above the AM broadcast band, easing EMI compliance. The exposed-pad TSSOP-8 dissipates the full 5 W on a 1-square-inch copper pour without a heatsink, simplifying the mechanical design of the sealed charger enclosure.
Рекомендуется
Solar Microinverter Isolated Bias
Microinverters attached to individual PV panels need isolated gate drive supplies for their high-voltage SiC or GaN switches, in a form factor small enough to fit inside the panel's junction box. The 2EP101RXTMA1's 5 W output biases one or two SiC gate drivers from a 12 V or 24 V auxiliary rail, while its PG-TSSOP-8 package occupies only 9 mm² of board area. The device's -40 °C to +125 °C operating range survives outdoor roof-mounted conditions including cold winters and hot attic installations. With one transformer and two Schottky diodes, the complete isolated bias circuit fits in less than 200 mm² of PCB, enabling sub-25 mm microinverter heights.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для 2EP101RXTMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | 2EP130RXTMA1 | 2EP101R | 1ED3142MC12HXUMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSSOP-8 | PG-TSSOP-8 - same | PG-TSSOP-8 - same | DSO-8 (different, isolated gate driver companion) |
| Topology | Full-bridge transformer driver | Full-bridge transformer driver | Full-bridge transformer driver | Isolated gate driver (not a transformer driver) |
| Switching Frequency | 50 kHz / 65 kHz selectable | 130 kHz (single frequency) | 50 kHz / 65 kHz selectable (identical) | N/A (gate driver, not oscillator) |
| Maximum Output Power | 5 W | 5 W | 5 W | N/A (gate driver IC) |
| Supply Voltage Range | 5 V to 20 V | 5 V to 20 V | 5 V to 20 V | 3 V to 5.5 V (gate driver supply) |
| Duty Cycle | 12% / 17% selectable | ~12% / 17% similar | 12% / 17% selectable (identical) | N/A |
| Operating Temperature | -40 °C to +125 °C | -40 °C to +125 °C | -40 °C to +125 °C | -40 °C to +125 °C |
| Delivery Form | Tape and Reel (XT suffix) | Tape and Reel (XT) | Tube (no XT) | Tape and Reel |
Ключевые отличия
- True full-bridge topology with bipolar output capability (против TI SN6505 (push-pull))
- Programmable frequency and duty cycle for transformer optimisation (против Maxim MAX253 (fixed-frequency))
- Integrated H-bridge MOSFETs in a TSSOP-8 package (против Discrete push-pull implementations)
Заметки по проектированию
Estimated: at full 5 W output into a gate driver load and 100% efficiency assumption, the 2EP101RXTMA1 dissipates roughly P = (VIN - 2×VOUT_DIODE) × IOUT on the input side. With VIN=12 V driving a ±15 V rail at 200 mA total, input current ≈ 250 mA and input-side dissipation ≈ (12 V × 250 mA) - 5 W ≈ 2 W. The PG-TSSOP-8 has typical theta_JA ≈ 50 °C/W on a 1-square-inch copper pour, producing a 100 °C junction-temperature rise over 25 °C ambient. Exposed thermal pad MUST be soldered to a copper pour of at least 25 mm² on both top and inner PCB layers with thermal vias.
Route the OUTA and OUTB traces as short and wide differential pairs, with the transformer primary placed within 5 mm of the IC pins to minimise ringing. Keep the FSET, DUTY and EN logic traces away from the OUTA/OUTB switching nodes to avoid capacitive coupling. Maintain at least 4 mm of PCB creepage between the transformer primary and secondary sides to meet 1500 V reinforced isolation requirements per IEC 62368-1. Place input bypass capacitors (10 µF + 100 nF ceramic) within 2 mm of pin 1 (VDDA) and the exposed pad.
Do not exceed the 20 V absolute maximum on VDDA; transients above this will permanently damage the internal H-bridge MOSFETs. Always include a Schottky flyback diode (or RC snubber) across the transformer primary to clamp leakage-inductance spikes that can exceed 30 V during the 65 kHz switching transitions. Verify the chosen transformer's saturation current exceeds the peak primary current (typically 1-2 A for 5 W designs). Failing to solder the exposed thermal pad to a copper pour will cause thermal runaway at full 5 W load.
Split the ground plane: use PGND for the H-bridge return currents (OUTA, OUTB) and GND for the analog/logic return (FSET, DUTY, EN). Connect PGND and GND at a single point under the exposed thermal pad to avoid ground-bounce coupling into the FSET/DUTY logic inputs. Place the transformer on the opposite side of the PCB from the H-bridge traces if possible, or at least 10 mm away, to minimise radiated EMI from the 50/65 kHz fundamental.
Информация о соответствии
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications requiring this certification, contact Infineon about the planned 2EP101R-Q1 variant. Lead-free PG-TSSOP-8 package.
