IPT030N12N3GATMA1 - 120V 237A 3mΩ N-Channel OptiMOS 3 | Infineon
Артикул: IPT030N12N3GATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $4.92 | $4,92 |
| 10 | $4.42 | $44,20 |
| 100 | $3.93 | $393,00 |
| 500 | $3.51 | $1.755,00 |
| 1.000 | $3.11 | $3.110,00 |
| 2.000 | $2.78 | $5.560,00 |
IPT030N12N3GATMA1 Обзор
An N-channel power MOSFET is a voltage-controlled majority-carrier device that conducts current between drain and source when a gate-source voltage exceeds the threshold. MOSFETs are the foundational switching element in modern DC-DC converters, motor drives, hot-swap circuits, and synchronous rectification. Within Infineon's portfolio, OptiMOS 3 represents a 120 V-class family optimized for low RDS(on) per unit area, fast switching, and high avalanche ruggedness — bridging the gap between 100 V-class logic-level FETs and 150 V-class high-voltage parts.
Key features include 3 mΩ maximum RDS(on) at VGS=10 V, an operating junction temperature range of -55 °C to +175 °C, and automotive qualification (per the manufacturer's datasheet). The PG-HSOF-8-1 package supports high continuous current by bonding the drain tab directly to the die, while the small outline reduces board area versus D2PAK alternatives. The 120 V drain-source rating provides ample margin above 48 V telecom buses and 80 V industrial rails.
Architecturally, the device uses a trench-gate vertical DMOS structure, which minimizes cell pitch and maximizes channel density. The result is a low figure-of-merit (FOM = RDS(on) × Qg) that translates into reduced conduction and switching losses, making the part well suited to high-frequency synchronous rectification in telecom and server SMPS stages.
Typical applications include synchronous rectification in 48 V isolated DC-DC converters, hot-swap and OR-ing controllers in telecom/networking hardware, motor drive half-bridges, and Class-D audio amplifier output stages. The 120 V rating covers 48 V nominal buses with full derating headroom, and the 3 mΩ RDS(on) keeps conduction loss low at tens of amps.
Designers should pay attention to gate-drive voltage (10 V VGS recommended for full RDS(on) performance) and to PCB layout of the source-sense Kelvin connection if exposed; a 4-layer board with generous copper pour on the HSOF tab is essential to achieve the rated 237 A pulsed current. Switching losses can dominate below 100 kHz with such low RDS(on), so gate-resistance selection matters.
This page synthesizes distributor pricing for the Infineon IPT030N12N3GATMA1, drop-in alternative recommendations, and practical design notes not collected in the manufacturer datasheet.
Аналоги без доработки для IPT030N12N3GATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IPT030N12N3GATMA1 (тот же форм-фактор и посадочное место) — отличается по Technology, Package, Operating Temperature Range, Product Family, Configuration.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IPT015N12N3GATMA1
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
IPT012N12N3GATMA1
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
IQE018N06NM6CGATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$1.21 / шт.
Открыть даташит →ISC011N04NM7VATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.41 / шт.
Открыть даташит →BSC076N04NDATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.82 / шт.
Открыть даташит →IPB60R040CFD7ATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$5.19 / шт.
Открыть даташит →IPT030N12N3GATMA1 Максимальные параметры и электрические характеристики
| Channel Type | N-Channel |
| Configuration | Single |
| Maximum Drain-Source Voltage (VDS) | 120 V |
| Maximum Gate-Source Voltage (VGS) | 20 V |
| Maximum On-Resistance (RDS(on)) | 3 mΩ |
| Continuous Drain Current (ID) at Ta | 24 A (Ta) |
| Pulsed Drain Current (IDM) at Tc | 237 A (Tc) |
| Power Dissipation (PD) at Ta | 3.8 W (Ta) |
| Power Dissipation (PD) at Tc | 375 W (Tc) |
| Technology | OptiMOS 3 |
| Рабочая температура перехода | -55 °C to +175 °C |
| Корпус | PG-HSOF-8-1 (TOLL) |
| Тип монтажа | Surface Mount |
| Automotive Qualified | Yes (per manufacturer datasheet) |
| Статус RoHS | Compliant with Exemption |
| Channel Mode | Enhancement |
Конфигурация выводов IPT030N12N3GATMA1
| Контакт 1 | Gate — Gate input (connect to gate driver output) |
| Контакт 2 | Source — Source (high-current path) |
| Контакт 3 | Source — Source (high-current path) |
| Контакт 4 | Kelvin Source — Kelvin source for gate-drive return (if exposed) |
| Контакт 5 | Source — Source (high-current path) |
| Контакт 6 | Source — Source (high-current path) |
| Контакт 7 | Source — Source (high-current path) |
| Контакт 8 | Source — Source (high-current path) |
Область безопасной работы (DC)
Типичное применение
IPT030N12N3GATMA1 подходит для 6 применениеs: 48 V Telecom Synchronous Rectification, Hot-Swap and OR-ing Controllers, Brushless DC Motor Drive Half-Bridge, Class-D Audio Amplifier Output Stage, Solar Inverter DC-DC Boost Stage, Automotive 48 V Mild-Hybrid Systems.
48 V Telecom Synchronous Rectification
The Infineon IPT030N12N3GATMA1 is a strong fit for synchronous rectification stages in 48 V isolated telecom DC-DC converters, where its 120 V VDS rating provides ample margin above the 48 V nominal bus plus transients, and its 3 mΩ RDS(on) minimizes conduction loss in the secondary-side rectifier. At 60 A rectifier current, conduction loss is approximately I²R = 60² × 0.003 = 10.8 W per FET, easily handled by the HSOF-8-1 package's PCB copper area. The OptiMOS 3 trench technology delivers low Qg × RDS(on) figure-of-merit for high-frequency LLC or hard-switched topologies above 100 kHz, improving efficiency by 1–2 % versus older planar MOSFETs.
Рекомендуется
Hot-Swap and OR-ing Controllers
The IPT030N12N3GATMA1 suits -48 V telecom hot-swap and OR-ing circuits where the FET must hold off 80–100 V continuously while carrying tens of amps during turn-on. The 120 V VDS rating comfortably covers the negative rail plus inductive spikes, and the 3 mΩ RDS(on) keeps path loss low in steady-state operation. The 237 A pulsed current capability handles inrush transients when hot-plugging large filter capacitors, and the automotive-grade reliability supports long-life service in central-office equipment.
Рекомендуется
Brushless DC Motor Drive Half-Bridge
The Infineon IPT030N12N3GATMA1 fits 48–96 V BLDC motor drive half-bridge positions, where 120 V VDS provides headroom above the bus voltage and the 3 mΩ RDS(on) keeps I²R losses low during PWM conduction. The 237 A pulsed current capability supports high-torque startup transients, and the HSOF-8-1 footprint enables compact three-phase inverter PCBs. Gate-drive voltages of 10 V from a bootstrap driver like the IRS21867STRPBF produce full RDS(on) performance across the -55 °C to +175 °C junction range.
Рекомендуется
Class-D Audio Amplifier Output Stage
The IPT030N12N3GATMA1 works as the output stage in high-power Class-D amplifiers where low RDS(on) directly translates to higher damping factor and lower THD. The 3 mΩ RDS(on) preserves audio quality even at high output power, and the 120 V VDS rating supports rail voltages above ±50 V for high-power consumer and pro-audio applications. The low Qgd/Qgs ratio from OptiMOS 3 minimizes dead-time distortion, a key contributor to THD in switching amplifiers above 200 kHz.
Рекомендуется
Solar Inverter DC-DC Boost Stage
The Infineon IPT030N12N3GATMA1 serves in solar micro-inverter and string-inverter boost stages, where 80–100 V panel strings are stepped up to 400 V DC-link. The 120 V VDS rating tolerates panel open-circuit voltage at cold temperatures, and the 3 mΩ RDS(on) keeps boost-stage conduction loss below 1 % at typical operating power. The HSOF-8-1 (TOLL) package simplifies thermal management by bonding the drain pad directly to the PCB copper heatsink, eliminating bulky D2PAK heatsinks in residential inverter designs.
Рекомендуется
Automotive 48 V Mild-Hybrid Systems
The IPT030N12N3GATMA1 is automotive qualified per the manufacturer datasheet, making it a strong fit for 48 V mild-hybrid power nets where 120 V VDS tolerates 48 V nominal plus load-dump transients up to 80 V. The 3 mΩ RDS(on) minimizes I²R loss in belt-starter-generator (BSG) inverter and DC-DC converter stages between the 48 V bus and 12 V battery. The HSOF-8-1 package meets AEC-Q101 automotive reliability requirements, and the OptiMOS 3 process is qualified to PPAP for major OEM platforms.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IPT030N12N3GATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IPT015N12N3GATMA1 | IPT012N12N3GATMA1 | IQE018N06NM6CGATMA1 | ISC011N04NM7VATMA1 | BSC076N04NDATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) - same | PG-HSOF-8-1 (TOLL) - same | PG-HSOF-8-1 (TOLL) - same | PG-HSOF-8-1 (TOLL) - same | PG-HSOF-8-1 (TOLL) - same | PG-HSOF-8-1 (TOLL) - same |
| Maximum VDS | 120 V | 120 V | 120 V | 60 V | 40 V | 40 V | 600 V |
| Maximum RDS(on) at VGS=10V | 3 mΩ | 1.5 mΩ | 1.2 mΩ | 1.8 mΩ | 1.1 mΩ | 7.6 mΩ | 40 mΩ |
| Technology | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 6 | OptiMOS 7 | OptiMOS | CoolMOS CFD7 |
| Automotive Qualified | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Ключевые отличия
- Lowest RDS(on) in 120 V TOLL-class footprint (против IPT015N12N3GATMA1)
- Optimal 120 V voltage class for 48 V telecom (против IQE018N06NM6CGATMA1)
- Automotive qualified for 48 V mild-hybrid (против IPB60R040CFD7ATMA1)
Заметки по проектированию
Estimated: at 100 A continuous current through the IPT030N12N3GATMA1, conduction loss is approximately I²R = 100² × 0.003 = 30 W. With a 4-layer PCB (2 oz copper outer / 1 oz inner), the HSOF-8-1 footprint thermal resistance (theta_JA) is typically 35–45 °C/W depending on copper area. Place thermal vias (0.3 mm drill, 0.6 mm pitch, 12+ vias) directly under the drain pad to spread heat into inner layers, and provide at least 1 square inch (645 mm²) of top-side copper for 100 A steady-state operation below 100 °C junction.
The HSOF-8-1 (TOLL) package exposes the drain pad on the bottom of the part. Solder paste stencil aperture should be 1:1 to the PCB land pattern, with 0.15–0.20 mm stencil thickness to avoid tombstoning. Keep the gate-driver trace as short as possible (under 10 mm total loop length) and route the high-current source paths on inner layers with sufficient copper pours to handle 100+ A. A Kelvin source connection (if exposed on pin 4) should be routed directly to the gate-driver ground return, never to the high-current source pad, to prevent dv/dt-induced gate-drive ringing.
The OptiMOS 3 process requires 10 V VGS to achieve the datasheet 3 mΩ RDS(on). Operating below 8 V dramatically increases on-resistance and conduction loss. For 48 V bus designs, use a bootstrap or isolated gate driver that produces 10–12 V drive, such as the IRS2110SPBF or 1ED3122MC12HXUMA1. Add a 10 kΩ gate-source resistor to prevent accidental turn-on from dv/dt coupling when the FET is supposed to be off, especially in half-bridge configurations where the high-side switch is subject to large VDS transitions.
Do not exceed the absolute maximum VGS of ±20 V — over-voltage on the gate oxide destroys the FET. Below VGS(th) (typically 2–4 V), the FET is in the linear region and dissipates excessive power; ensure the gate driver actively pulls the gate below VGS(th) during turn-off. For paralleled FETs, use parts from the same lot to minimize RDS(on) mismatch, and add individual gate resistors (5–10 Ω) to damp parasitic oscillations between paralleled devices.
Информация о соответствии
RoHS compliant with exemption per Arrow.com product listing. AEC-Q100 / AEC-Q101 automotive qualified per Infineon datasheet. Reach SVHC declaration: Exceeds Threshold (per Arrow.com listing); review latest Infineon compliance statement for full substance list.