STMicroelectronics
STF25NM60ND - 600V 21A N-Ch MOSFET TO-220FP | STMicroelectronics
Артикул: STF25NM60ND ✓ Активен
В наличии
Отправка в течение 1–3 рабочих дней
600 V Vdss
21 A Id
0.13 ohm Rds(on)
TO-220FP (isolated) Package
От $1
USD / шт.
MOQ: 1 |
Цена обновлена: 2026-09-03
Оптовые цены
| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1 | $1,00 |
ℹ️ Все цены указаны в USD
STF25NM60ND Обзор
The STMicroelectronics STF25NM60ND is an N-channel 600 V power MOSFET built on the FDmesh II trench technology, rated for 21 A drain current (at Tc) and 40 W power dissipation in an isolated TO-220FP package. Its typical on-resistance of 0.13 ohm and integrated fast-recovery body diode make it well suited for off-line switched-mode power conversion.
A power MOSFET is a voltage-controlled semiconductor switch used to regulate or convert electrical power. Within the component hierarchy, the STF25NM60ND belongs to the transistor family, specifically the MOSFET (metal-oxide-semiconductor field-effect transistor) class, which sits within the broader category of discrete semiconductors and power management components. Power MOSFETs are the switching elements in SMPS topologies such as flyback, forward, half-bridge and resonant converters.
Key features include the 600 V drain-source breakdown voltage rating for universal-mains rectified-bus applications, FDmesh II process technology that lowers RDS(on) and gate charge for improved efficiency, and the fast-recovery intrinsic body diode (indicated by the D suffix) that reduces reverse-recovery losses in hard-switched topologies such as two-switch forward and LLC converters. The F suffix in the part number denotes the TO-220FP fully molded isolated package, providing 2500 Vrms electrical isolation without an external insulator, simplifying heatsink mounting.
The FDmesh II stripe-trench architecture balances conduction and switching losses, allowing designers to optimize for either low-frequency conduction efficiency or high-frequency switching performance. Low gate charge reduces gate-drive losses, while the rugged body diode withstands avalanche events typical of transformer-leakage-inductance environments.
Typical applications include off-line flyback and forward AC-DC converters for industrial power supplies, PFC pre-regulator stages, motor drive inverter legs for light industrial loads, and high-voltage DC-DC modules for solar and telecom rectifiers.
Design tip: the TO-220FP isolated package has higher thermal resistance than standard TO-220, so verify junction temperature with proper heatsink sizing; drive the gate with a low-impedance driver (e.g., 10 ohm series resistor) to manage EMI from fast switching edges.
A power MOSFET is a voltage-controlled semiconductor switch used to regulate or convert electrical power. Within the component hierarchy, the STF25NM60ND belongs to the transistor family, specifically the MOSFET (metal-oxide-semiconductor field-effect transistor) class, which sits within the broader category of discrete semiconductors and power management components. Power MOSFETs are the switching elements in SMPS topologies such as flyback, forward, half-bridge and resonant converters.
Key features include the 600 V drain-source breakdown voltage rating for universal-mains rectified-bus applications, FDmesh II process technology that lowers RDS(on) and gate charge for improved efficiency, and the fast-recovery intrinsic body diode (indicated by the D suffix) that reduces reverse-recovery losses in hard-switched topologies such as two-switch forward and LLC converters. The F suffix in the part number denotes the TO-220FP fully molded isolated package, providing 2500 Vrms electrical isolation without an external insulator, simplifying heatsink mounting.
The FDmesh II stripe-trench architecture balances conduction and switching losses, allowing designers to optimize for either low-frequency conduction efficiency or high-frequency switching performance. Low gate charge reduces gate-drive losses, while the rugged body diode withstands avalanche events typical of transformer-leakage-inductance environments.
Typical applications include off-line flyback and forward AC-DC converters for industrial power supplies, PFC pre-regulator stages, motor drive inverter legs for light industrial loads, and high-voltage DC-DC modules for solar and telecom rectifiers.
Design tip: the TO-220FP isolated package has higher thermal resistance than standard TO-220, so verify junction temperature with proper heatsink sizing; drive the gate with a low-impedance driver (e.g., 10 ohm series resistor) to manage EMI from fast switching edges.
Аналоги без доработки для STF25NM60ND — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
Для этого товара нет аналогов без доработки.
Запросить аналогиSTF25NM60ND Максимальные параметры и электрические характеристики
| Polarity | N-Channel |
| Drain-Source Voltage (VDSS) | 600 V |
| Continuous Drain Current (ID at Tc) | 21 A |
| On-Resistance (RDS(on) typ) | 0.13 ohm |
| Power Dissipation (PD at Tc) | 40 W |
| Technology | FDmesh II trench |
| Body Diode | Fast recovery intrinsic |
| Корпус | TO-220FP (isolated) |
| Тип монтажа | Through Hole |
| Isolation | Fully molded isolated package (F suffix) |
| Статус RoHS | Compliant |
| Configuration | Single MOSFET |
Конфигурация выводов STF25NM60ND
| Контакт 1 | Gate (G) — Gate control terminal |
| Контакт 2 | Drain (D) — Connected to heatsink tab, drain terminal |
| Контакт 3 | Source (S) — Source terminal |
Область безопасной работы
Непрерывная работа на постоянном токе
Типичное применение
STF25NM60ND подходит для 3 применениеs: Управление питанием, Управление двигателями, Светодиодное освещение.
Управление питанием
Коммутация и регулирование в цепях питания с использованием STF25NM60ND.
Управление двигателями
Управление двигателями постоянного тока и BLDC с помощью STF25NM60ND.
Светодиодное освещение
Управление светодиодными цепочками и матрицами с помощью STF25NM60ND.
Для этого товара нет FAQ.
Справочные инженерные данные для STF25NM60ND — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Choose the STF25NM60ND when you need a 600 V, 21 A N-channel MOSFET with an isolated TO-220FP package for off-line power converters requiring a fast-recovery body diode and no external isolation pad. Choose STP25NM60ND for non-isolated TO-220 mounting with better thermal performance. Choose STB25NM60ND (D2PAK) for surface-mount-friendly boards. Choose STF23NM60ND when slightly lower current (23 A class) suffices at lower cost. For 650 V designs with more margin, consider STF24NM65N. The isolated FP package trades thermal resistance for mounting convenience and isolation.
Информация о соответствии
RoHS
Compliant
REACH
Unknown
AEC-Q100
Без свинца
Без галогенов
Unknown
Конфликтные минералы
Unknown
RoHS compliance per STMicroelectronics product listing; other statuses not stated in provided data.
Данные проверены: 2026-08-29
— данные проверены и курируются командой компонентной инженерии XAIPART
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Связанные компоненты & термины
STMicroelectronics
STF25NM60ND
STP25NM60ND
STB25NM60ND
STF23NM60ND
STF24NM65N
power MOSFET
N-channel MOSFET
discrete semiconductor
FDmesh II
TO-220FP
TO-220
D2PAK
fast recovery body diode
RDS(on)
600 V breakdown voltage
RoHS
off-line SMPS
flyback converter
PFC
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