STMicroelectronics
STF25NM60ND - 600V 21A N-Ch MOSFET TO-220FP | STMicroelectronics
部品番号: STF25NM60ND ✓ 生産中
在庫あり
1〜3営業日以内に発送
600 V Vdss
21 A Id
0.13 ohm Rds(on)
TO-220FP (isolated) Package
開始価格 $1
USD / 個
MOQ: 1 |
価格更新日: 2026-09-03
ボリューム価格
| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1 | $1.00 |
ℹ️ すべての価格はUSDです
STF25NM60ND 概要
The STMicroelectronics STF25NM60ND is an N-channel 600 V power MOSFET built on the FDmesh II trench technology, rated for 21 A drain current (at Tc) and 40 W power dissipation in an isolated TO-220FP package. Its typical on-resistance of 0.13 ohm and integrated fast-recovery body diode make it well suited for off-line switched-mode power conversion.
A power MOSFET is a voltage-controlled semiconductor switch used to regulate or convert electrical power. Within the component hierarchy, the STF25NM60ND belongs to the transistor family, specifically the MOSFET (metal-oxide-semiconductor field-effect transistor) class, which sits within the broader category of discrete semiconductors and power management components. Power MOSFETs are the switching elements in SMPS topologies such as flyback, forward, half-bridge and resonant converters.
Key features include the 600 V drain-source breakdown voltage rating for universal-mains rectified-bus applications, FDmesh II process technology that lowers RDS(on) and gate charge for improved efficiency, and the fast-recovery intrinsic body diode (indicated by the D suffix) that reduces reverse-recovery losses in hard-switched topologies such as two-switch forward and LLC converters. The F suffix in the part number denotes the TO-220FP fully molded isolated package, providing 2500 Vrms electrical isolation without an external insulator, simplifying heatsink mounting.
The FDmesh II stripe-trench architecture balances conduction and switching losses, allowing designers to optimize for either low-frequency conduction efficiency or high-frequency switching performance. Low gate charge reduces gate-drive losses, while the rugged body diode withstands avalanche events typical of transformer-leakage-inductance environments.
Typical applications include off-line flyback and forward AC-DC converters for industrial power supplies, PFC pre-regulator stages, motor drive inverter legs for light industrial loads, and high-voltage DC-DC modules for solar and telecom rectifiers.
Design tip: the TO-220FP isolated package has higher thermal resistance than standard TO-220, so verify junction temperature with proper heatsink sizing; drive the gate with a low-impedance driver (e.g., 10 ohm series resistor) to manage EMI from fast switching edges.
A power MOSFET is a voltage-controlled semiconductor switch used to regulate or convert electrical power. Within the component hierarchy, the STF25NM60ND belongs to the transistor family, specifically the MOSFET (metal-oxide-semiconductor field-effect transistor) class, which sits within the broader category of discrete semiconductors and power management components. Power MOSFETs are the switching elements in SMPS topologies such as flyback, forward, half-bridge and resonant converters.
Key features include the 600 V drain-source breakdown voltage rating for universal-mains rectified-bus applications, FDmesh II process technology that lowers RDS(on) and gate charge for improved efficiency, and the fast-recovery intrinsic body diode (indicated by the D suffix) that reduces reverse-recovery losses in hard-switched topologies such as two-switch forward and LLC converters. The F suffix in the part number denotes the TO-220FP fully molded isolated package, providing 2500 Vrms electrical isolation without an external insulator, simplifying heatsink mounting.
The FDmesh II stripe-trench architecture balances conduction and switching losses, allowing designers to optimize for either low-frequency conduction efficiency or high-frequency switching performance. Low gate charge reduces gate-drive losses, while the rugged body diode withstands avalanche events typical of transformer-leakage-inductance environments.
Typical applications include off-line flyback and forward AC-DC converters for industrial power supplies, PFC pre-regulator stages, motor drive inverter legs for light industrial loads, and high-voltage DC-DC modules for solar and telecom rectifiers.
Design tip: the TO-220FP isolated package has higher thermal resistance than standard TO-220, so verify junction temperature with proper heatsink sizing; drive the gate with a low-impedance driver (e.g., 10 ohm series resistor) to manage EMI from fast switching edges.
ドロップイン代替品: STF25NM60ND — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
この製品に利用可能なドロップイン代替品はありません。
代替品をリクエストSTF25NM60ND 最大定格＆電気的特性
| Polarity | N-Channel |
| Drain-Source Voltage (VDSS) | 600 V |
| Continuous Drain Current (ID at Tc) | 21 A |
| On-Resistance (RDS(on) typ) | 0.13 ohm |
| Power Dissipation (PD at Tc) | 40 W |
| Technology | FDmesh II trench |
| Body Diode | Fast recovery intrinsic |
| パッケージ | TO-220FP (isolated) |
| 実装タイプ | Through Hole |
| Isolation | Fully molded isolated package (F suffix) |
| RoHS ステータス | Compliant |
| Configuration | Single MOSFET |
STF25NM60ND ピン構成
| ピン 1 | Gate (G) — Gate control terminal |
| ピン 2 | Drain (D) — Connected to heatsink tab, drain terminal |
| ピン 3 | Source (S) — Source terminal |
安全動作領域
DC連続動作
主な用途
STF25NM60ND の用途: 3 件s: 電源管理, モーター制御, LED照明.
電源管理
STF25NM60NDを使用した電源回路のスイッチングとレギュレーション。
モーター制御
STF25NM60NDによるDC/BLDCモーターの駆動と制御。
LED照明
STF25NM60NDによるLEDストリングおよびアレイの駆動。
この製品に関するFAQはありません。
エンジニアリング参考データ: STF25NM60ND — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
Choose the STF25NM60ND when you need a 600 V, 21 A N-channel MOSFET with an isolated TO-220FP package for off-line power converters requiring a fast-recovery body diode and no external isolation pad. Choose STP25NM60ND for non-isolated TO-220 mounting with better thermal performance. Choose STB25NM60ND (D2PAK) for surface-mount-friendly boards. Choose STF23NM60ND when slightly lower current (23 A class) suffices at lower cost. For 650 V designs with more margin, consider STF24NM65N. The isolated FP package trades thermal resistance for mounting convenience and isolation.
コンプライアンス情報
RoHS
Compliant
REACH
Unknown
AEC-Q100
鉛フリー
ハロゲンフリー
Unknown
紛争鉱物
Unknown
RoHS compliance per STMicroelectronics product listing; other statuses not stated in provided data.
データ検証日: 2026-08-29
— データはXAIPARTの部品エンジニアリングチームによって検証・管理されています
関連検索
STF25NM60ND datasheet PDF
STF25NM60ND STMicroelectronics MOSFET
STF25NM60ND pinout TO-220FP
600V N-channel MOSFET 21A isolated TO-220FP
STF25NM60ND equivalent replacement
STF25NM60ND vs STF23NM60ND
STF25NM60ND price buy
STF25NM60ND flyback converter switch
fast body diode 600V MOSFET
what replaces STF25NM60ND
関連部品&用語
STMicroelectronics
STF25NM60ND
STP25NM60ND
STB25NM60ND
STF23NM60ND
STF24NM65N
power MOSFET
N-channel MOSFET
discrete semiconductor
FDmesh II
TO-220FP
TO-220
D2PAK
fast recovery body diode
RDS(on)
600 V breakdown voltage
RoHS
off-line SMPS
flyback converter
PFC
1 / 1