STMicroelectronics
STF25NM60ND - 600V 21A N-Ch MOSFET TO-220FP | STMicroelectronics
Référence : STF25NM60ND ✓ Actif
En stock
Expédié sous 1 à 3 jours ouvrés
600 V Vdss
21 A Id
0.13 ohm Rds(on)
TO-220FP (isolated) Package
À partir de $1
USD / unité
MOQ : 1 |
Prix mis à jour : 2026-09-03
Tarifs dégressifs
| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1 | $1,00 |
ℹ️ Tous les prix sont en USD
STF25NM60ND Présentation
The STMicroelectronics STF25NM60ND is an N-channel 600 V power MOSFET built on the FDmesh II trench technology, rated for 21 A drain current (at Tc) and 40 W power dissipation in an isolated TO-220FP package. Its typical on-resistance of 0.13 ohm and integrated fast-recovery body diode make it well suited for off-line switched-mode power conversion.
A power MOSFET is a voltage-controlled semiconductor switch used to regulate or convert electrical power. Within the component hierarchy, the STF25NM60ND belongs to the transistor family, specifically the MOSFET (metal-oxide-semiconductor field-effect transistor) class, which sits within the broader category of discrete semiconductors and power management components. Power MOSFETs are the switching elements in SMPS topologies such as flyback, forward, half-bridge and resonant converters.
Key features include the 600 V drain-source breakdown voltage rating for universal-mains rectified-bus applications, FDmesh II process technology that lowers RDS(on) and gate charge for improved efficiency, and the fast-recovery intrinsic body diode (indicated by the D suffix) that reduces reverse-recovery losses in hard-switched topologies such as two-switch forward and LLC converters. The F suffix in the part number denotes the TO-220FP fully molded isolated package, providing 2500 Vrms electrical isolation without an external insulator, simplifying heatsink mounting.
The FDmesh II stripe-trench architecture balances conduction and switching losses, allowing designers to optimize for either low-frequency conduction efficiency or high-frequency switching performance. Low gate charge reduces gate-drive losses, while the rugged body diode withstands avalanche events typical of transformer-leakage-inductance environments.
Typical applications include off-line flyback and forward AC-DC converters for industrial power supplies, PFC pre-regulator stages, motor drive inverter legs for light industrial loads, and high-voltage DC-DC modules for solar and telecom rectifiers.
Design tip: the TO-220FP isolated package has higher thermal resistance than standard TO-220, so verify junction temperature with proper heatsink sizing; drive the gate with a low-impedance driver (e.g., 10 ohm series resistor) to manage EMI from fast switching edges.
A power MOSFET is a voltage-controlled semiconductor switch used to regulate or convert electrical power. Within the component hierarchy, the STF25NM60ND belongs to the transistor family, specifically the MOSFET (metal-oxide-semiconductor field-effect transistor) class, which sits within the broader category of discrete semiconductors and power management components. Power MOSFETs are the switching elements in SMPS topologies such as flyback, forward, half-bridge and resonant converters.
Key features include the 600 V drain-source breakdown voltage rating for universal-mains rectified-bus applications, FDmesh II process technology that lowers RDS(on) and gate charge for improved efficiency, and the fast-recovery intrinsic body diode (indicated by the D suffix) that reduces reverse-recovery losses in hard-switched topologies such as two-switch forward and LLC converters. The F suffix in the part number denotes the TO-220FP fully molded isolated package, providing 2500 Vrms electrical isolation without an external insulator, simplifying heatsink mounting.
The FDmesh II stripe-trench architecture balances conduction and switching losses, allowing designers to optimize for either low-frequency conduction efficiency or high-frequency switching performance. Low gate charge reduces gate-drive losses, while the rugged body diode withstands avalanche events typical of transformer-leakage-inductance environments.
Typical applications include off-line flyback and forward AC-DC converters for industrial power supplies, PFC pre-regulator stages, motor drive inverter legs for light industrial loads, and high-voltage DC-DC modules for solar and telecom rectifiers.
Design tip: the TO-220FP isolated package has higher thermal resistance than standard TO-220, so verify junction temperature with proper heatsink sizing; drive the gate with a low-impedance driver (e.g., 10 ohm series resistor) to manage EMI from fast switching edges.
Alternatives de remplacement direct pour STF25NM60ND — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
Aucune alternative de remplacement direct disponible pour ce produit.
Demander des alternativesSTF25NM60ND Valeurs maximales et caractéristiques électriques
| Polarity | N-Channel |
| Drain-Source Voltage (VDSS) | 600 V |
| Continuous Drain Current (ID at Tc) | 21 A |
| On-Resistance (RDS(on) typ) | 0.13 ohm |
| Power Dissipation (PD at Tc) | 40 W |
| Technology | FDmesh II trench |
| Body Diode | Fast recovery intrinsic |
| Boîtier | TO-220FP (isolated) |
| Type de montage | Through Hole |
| Isolation | Fully molded isolated package (F suffix) |
| Statut RoHS | Compliant |
| Configuration | Single MOSFET |
Configuration des broches de STF25NM60ND
| Broche 1 | Gate (G) — Gate control terminal |
| Broche 2 | Drain (D) — Connected to heatsink tab, drain terminal |
| Broche 3 | Source (S) — Source terminal |
Zone de fonctionnement sûr
Fonctionnement continu en CC
Applications typiques
STF25NM60ND convient pour 3 applications: Gestion de l'alimentation, Commande de moteur, Éclairage LED.
Gestion de l'alimentation
Commutation et régulation dans les circuits d'alimentation à l'aide de STF25NM60ND.
Commande de moteur
Pilotage et commande de moteurs CC/BLDC avec STF25NM60ND.
Éclairage LED
Pilotage de chaînes et matrices de LED avec STF25NM60ND.
Aucune FAQ disponible pour ce produit.
Données de référence d'ingénierie pour STF25NM60ND — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Choose the STF25NM60ND when you need a 600 V, 21 A N-channel MOSFET with an isolated TO-220FP package for off-line power converters requiring a fast-recovery body diode and no external isolation pad. Choose STP25NM60ND for non-isolated TO-220 mounting with better thermal performance. Choose STB25NM60ND (D2PAK) for surface-mount-friendly boards. Choose STF23NM60ND when slightly lower current (23 A class) suffices at lower cost. For 650 V designs with more margin, consider STF24NM65N. The isolated FP package trades thermal resistance for mounting convenience and isolation.
Informations de conformité
RoHS
Compliant
REACH
Unknown
AEC-Q100
Sans plomb
Sans halogène
Unknown
Minerais de conflit
Unknown
RoHS compliance per STMicroelectronics product listing; other statuses not stated in provided data.
Données vérifiées le : 2026-08-29
— données vérifiées et sélectionnées par l'équipe d'ingénierie composants de XAIPART
Recherches associées
STF25NM60ND datasheet PDF
STF25NM60ND STMicroelectronics MOSFET
STF25NM60ND pinout TO-220FP
600V N-channel MOSFET 21A isolated TO-220FP
STF25NM60ND equivalent replacement
STF25NM60ND vs STF23NM60ND
STF25NM60ND price buy
STF25NM60ND flyback converter switch
fast body diode 600V MOSFET
what replaces STF25NM60ND
Composants & termes associés
STMicroelectronics
STF25NM60ND
STP25NM60ND
STB25NM60ND
STF23NM60ND
STF24NM65N
power MOSFET
N-channel MOSFET
discrete semiconductor
FDmesh II
TO-220FP
TO-220
D2PAK
fast recovery body diode
RDS(on)
600 V breakdown voltage
RoHS
off-line SMPS
flyback converter
PFC
1 / 1