2ED2304S06FXUMA1 vs IR2109SPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2ED2304S06FXUMA1 sa pamamagitan ng Infineon at IR2109SPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
2ED2304S06FXUMA1 2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon

2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon

2ED2304S06FXUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2ED2304S06FXUMA1 IR2109SPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Driver Configuration Half-Bridge (High-Side + Low-Side) Half-Bridge
Technology Infineon thin-film SOI —
Blocking Voltage (High-Side) 650 V —
Source Current (typ.) 0.36 A —
Sink Current (typ.) 0.7 A —
Input Logic Compatibility 3.3 V CMOS / LSTTL (Schmitt-trigger) 3.3 V / 5 V CMOS / TTL
VCC Supply Range 10 V to 17 V —
Bootstrap Diode Integrated (BSD) Integrated
Undervoltage Lockout (UVLO) Yes (VCC and VB-VS) —
Interlock / Anti-Shoot-Through Built-in —
Propagation Delay (typ.) 200 ns —
Hanay ng Temperature na Operasyon -40C to +125C —
Packhaging PG-DSO-8-910 (DSO-8) SOIC-8
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 2 —
Tindminan RoHS Compliant Compliant
Number of Drivers — 2 (high-side + low-side)
High-Side Voltage Tolerance — 600 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.2 A
Sink Current (typical) — 0.35 A
Turn-On Propagation Delay — 150 ns
Turn-Off Propagation Delay — 150 ns
Oras ng Pagtaas — 200 ns
Time ng Pagbaba — 50 ns
Quiescent VCC Current — 1 mA
Undervoltage Lockout — Yes (VCC)
Temperature ng Junction na Operasyon — -40 C to +150 C

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