2ED2304S06FXUMA1 vs IR2109SPBF 比較

詳細並排比較 2ED2304S06FXUMA1 由 Infineon 與 IR2109SPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2304S06FXUMA1 2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon

2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon

2ED2304S06FXUMA1 ✓ 啟用中

規格比較

參數 2ED2304S06FXUMA1 IR2109SPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Configuration Half-Bridge (High-Side + Low-Side) Half-Bridge
Technology Infineon thin-film SOI —
Blocking Voltage (High-Side) 650 V —
Source Current (typ.) 0.36 A —
Sink Current (typ.) 0.7 A —
Input Logic Compatibility 3.3 V CMOS / LSTTL (Schmitt-trigger) 3.3 V / 5 V CMOS / TTL
VCC Supply Range 10 V to 17 V —
Bootstrap Diode Integrated (BSD) Integrated
Undervoltage Lockout (UVLO) Yes (VCC and VB-VS) —
Interlock / Anti-Shoot-Through Built-in —
Propagation Delay (typ.) 200 ns —
工作溫度範圍 -40C to +125C —
封裝 PG-DSO-8-910 (DSO-8) SOIC-8
安裝類型 Surface Mount Surface Mount
MSL 等級 2 —
RoHS 狀態 Compliant Compliant
Number of Drivers — 2 (high-side + low-side)
High-Side Voltage Tolerance — 600 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.2 A
Sink Current (typical) — 0.35 A
Turn-On Propagation Delay — 150 ns
Turn-Off Propagation Delay — 150 ns
上升時間 — 200 ns
下降時間 — 50 ns
Quiescent VCC Current — 1 mA
Undervoltage Lockout — Yes (VCC)
工作接面溫度 — -40 C to +150 C

資料表與資源

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