2EDL8033G4CXTMA1 vs 2EDL6014ACG2DXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2EDL8033G4CXTMA1 sa pamamagitan ng Infineon at 2EDL6014ACG2DXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
2EDL8033G4CXTMA1 2EDL8033G4CXTMA1 - 120V Half-Bridge Gate Driver IC | Infineon

2EDL8033G4CXTMA1 - 120V Half-Bridge Gate Driver IC | Infineon

2EDL8033G4CXTMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2EDL8033G4CXTMA1 2EDL6014ACG2DXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Product Type Half-Bridge Gate Driver IC —
Configuration High-Side / Low-Side, Non-Inverting —
Bilang ng Outputs 2 (HS + LS) —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Bootstrap Voltage (Max) 120 V —
VCC Supply Voltage 10 V to 20 V —
Logic Input Compatibility 3.3 V / 5 V CMOS / TTL —
Isolation Technology Junction-isolated —
Propagation Delay (Typ) 45 ns —
Channel-to-Channel Matching <10 ns —
Integrated Bootstrap Diode Yes —
Hanay ng Temperature na Operasyon -40C to +125C —
Packhaging PG-VDSON-10-2 (10-pin VDSON with exposed pad) 11-WQFN (2.2 x 2.2 mm) with exposed pad
Uri ng Pagpapasok Surface Mount Surface Mount
Marking Code 2ED8033G4C —
Tindminan RoHS Compliant —
Driver Type — Half-Bridge Gate Driver
Number of Channels — 2 (high-side + low-side)
Output Kumpigurasyon — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
Temperature na Operasyon — -40 C to +125 C
Packing Method — Tape & Reel
Isolation Type — Isolated (level-shifted floating high-side)
Technology Family — EiceDRIVER 2EDL

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