2EDL8033G4CXTMA1 vs 2EDL6014ACG2DXTMA1 比較

詳細並排比較 2EDL8033G4CXTMA1 由 Infineon 與 2EDL6014ACG2DXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2EDL8033G4CXTMA1 2EDL8033G4CXTMA1 - 120V Half-Bridge Gate Driver IC | Infineon

2EDL8033G4CXTMA1 - 120V Half-Bridge Gate Driver IC | Infineon

2EDL8033G4CXTMA1 ✓ 啟用中

規格比較

參數 2EDL8033G4CXTMA1 2EDL6014ACG2DXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Half-Bridge Gate Driver IC —
Configuration High-Side / Low-Side, Non-Inverting —
輸出數量 2 (HS + LS) —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Bootstrap Voltage (Max) 120 V —
VCC Supply Voltage 10 V to 20 V —
Logic Input Compatibility 3.3 V / 5 V CMOS / TTL —
Isolation Technology Junction-isolated —
Propagation Delay (Typ) 45 ns —
Channel-to-Channel Matching <10 ns —
Integrated Bootstrap Diode Yes —
工作溫度範圍 -40C to +125C —
封裝 PG-VDSON-10-2 (10-pin VDSON with exposed pad) 11-WQFN (2.2 x 2.2 mm) with exposed pad
安裝類型 Surface Mount Surface Mount
Marking Code 2ED8033G4C —
RoHS 狀態 Compliant —
Driver Type — Half-Bridge Gate Driver
Number of Channels — 2 (high-side + low-side)
輸出配置 — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
工作溫度 — -40 C to +125 C
Packing Method — Tape & Reel
Isolation Type — Isolated (level-shifted floating high-side)
Technology Family — EiceDRIVER 2EDL

資料表與資源

瀏覽所有產品 建立 BOM 索取報價