2EDL900G3XTMA1 vs 2EDL8124GXUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2EDL900G3XTMA1 sa pamamagitan ng Infineon at 2EDL8124GXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 2EDL900G3XTMA1 2EDL8124GXUMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Product Type Dual-channel level-shift gate driver IC —
Topology Supported Half-bridge, high-side, low-side —
Isolation Type Junction isolation (JI), 120 V Junction isolation (JI)
Number of Channels 2 (high-side + low-side) —
Peak Source Current 4 A 3 A
Peak Sink Current 6 A 4 A
Drive Output Voltage Range 4 V to 16 V —
Supply Voltage (VDD/VBS) 4 V to 16 V —
Switching Device Supported Si MOSFET, enhancement-mode GaN FET —
Configurable Deadtime Yes (programmable) —
Integrated Current Sense Amplifier Yes —
PWM Modes Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted —
Input Logic Compatibility 3.3 V / 5 V / TTL (per datasheet) —
Packhaging TSNP-16 (3x3 mm) with exposed pad PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -40 C to +125 C [DATA_NEEDED: operating temperature range in C]
Level ng MSL 1 [DATA_NEEDED: MSL rating]
Tindminan RoHS Compliant Compliant
Driver Configuration — Half-bridge (high-side + low-side)
Input Type — Non-inverting, TTL-compatible with hysteresis
Number of Drivers — 2
Bootstrap Supply (VBS) Maximum — 120 V
VCC Supply Range — [DATA_NEEDED: VCC min/max typical range]
Bootstrap Diode — Integrated
Propagation Delay (typical) — < 50 ns
Delay Matching Between Channels — [DATA_NEEDED: delay matching spec in ns]
UVLO — Present on VCC and VBS
Lead-Free — Yes

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