2EDL900G3XTMA1 vs 2EDL8124GXUMA1 比較

詳細並排比較 2EDL900G3XTMA1 由 Infineon 與 2EDL8124GXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 2EDL900G3XTMA1 2EDL8124GXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Dual-channel level-shift gate driver IC —
Topology Supported Half-bridge, high-side, low-side —
Isolation Type Junction isolation (JI), 120 V Junction isolation (JI)
Number of Channels 2 (high-side + low-side) —
Peak Source Current 4 A 3 A
Peak Sink Current 6 A 4 A
Drive Output Voltage Range 4 V to 16 V —
Supply Voltage (VDD/VBS) 4 V to 16 V —
Switching Device Supported Si MOSFET, enhancement-mode GaN FET —
Configurable Deadtime Yes (programmable) —
Integrated Current Sense Amplifier Yes —
PWM Modes Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted —
Input Logic Compatibility 3.3 V / 5 V / TTL (per datasheet) —
封裝 TSNP-16 (3x3 mm) with exposed pad PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40 C to +125 C [DATA_NEEDED: operating temperature range in C]
MSL 等級 1 [DATA_NEEDED: MSL rating]
RoHS 狀態 Compliant Compliant
Driver Configuration — Half-bridge (high-side + low-side)
Input Type — Non-inverting, TTL-compatible with hysteresis
Number of Drivers — 2
Bootstrap Supply (VBS) Maximum — 120 V
VCC Supply Range — [DATA_NEEDED: VCC min/max typical range]
Bootstrap Diode — Integrated
Propagation Delay (typical) — < 50 ns
Delay Matching Between Channels — [DATA_NEEDED: delay matching spec in ns]
UVLO — Present on VCC and VBS
Lead-Free — Yes

資料表與資源

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