AFT26H050W26SR3 vs AFT26HW050SR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng AFT26H050W26SR3 sa pamamagitan ng NXP Semiconductors at AFT26HW050SR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP
AFT26H050W26SR3 ObsoleteNXP Semiconductors
AFT26HW050SR3 - 9W Asym Doherty LDMOS 2496-2690 MHz | NXP
AFT26HW050SR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | AFT26H050W26SR3 | AFT26HW050SR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Obsolete | Aktibo |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Uri ng Transistor | N-Channel LDMOS, Enhancement Mode | — |
| Frequency Range | 2.496 GHz to 2.69 GHz | 2496 MHz to 2690 MHz |
| Average Output Power | 9 W | — |
| Test Voltage | 28 V | — |
| Test Current | 100 mA | — |
| Power Gain | 14.2 dB | — |
| Maximum Drain-Source Voltage | 65 V | — |
| Maximum Operating Temperature | 150 °C | — |
| Peak Reflow Temperature | 260 °C | — |
| Configuration | Single, Asymmetrical Doherty | — |
| Number of Elements | 1 | — |
| Technology | Metal-Oxide Semiconductor (LDMOS) | — |
| Packhaging | NI-780S-4L4L-8 (ceramic, overmolded) | — |
| Channel Type | N-Channel | — |
| Uri ng Pagpapasok | Surface Mount / chassis-mount screw flange | Surface Mount (SMD RF Flange) |
| Supplier Device Package | NI-780S-4L4L-8 | — |
| Part Family | — | Airfast AFT26HW050S Series |
| Device Type | — | RF Power LDMOS Transistor (Asymmetrical Doherty) |
| Transistor Polarity | — | N-Channel |
| Mode | — | Enhancement Mode |
| Output Power (Average) | — | 9 W (Average) |
| Output Power (Peak) | — | 50 W (Peak) |
| Power Gain (Typical) | — | 14.2 dB |
| Drain Voltage (Operating) | — | 28 V |
| Quiescent Current (Test) | — | 100 mA |
| Packhaging / Kaso | — | NI-780-4S4 (Ceramic Air-Cavity) |
| Topolohiya | — | Asymmetrical Doherty (Main + Peak) |
| Application Band | — | 2.6 GHz TDD-LTE / 5G NR |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Series | — | Airfast RF Power |