BAT42-TAP vs 1N5711 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BAT42-TAP sa pamamagitan ng Vishay Intertechnology at 1N5711 sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
STMicroelectronics
1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics
1N5711 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BAT42-TAP | 1N5711 |
|---|---|---|
| Brand | Vishay Intertechnology | STMicroelectronics |
| Kategorya | Diodes | Diodes |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Diode Type | Small-Signal Schottky Barrier | Small-signal Schottky barrier (RF) diode |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | — |
| Average Forward Current (IF(AV)) | 200 mA | — |
| Non-Repetitive Surge Current (IFSM) | 4.0 A | — |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | 0.41 V (at 1 mA, per MACOM) |
| Reverse Recovery | Fast switching (Schottky, no stored charge) | — |
| Junction Capacitance | [DATA_NEEDED: diode capacitance] | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage at rated VR] | — |
| Packhaging | DO-204AH (DO-35) glass axial | DO-35 (DO-204AH) hermetic axial-lead glass |
| Uri ng Pagpapasok | Through Hole | Through-Hole |
| Termination Style | Axial Leads | — |
| Packaging Suffix | -TAP (Ammo tape packing) | — |
| Configuration | Single Diode | — |
| Protection Feature | PN junction guard ring against ESD / excessive voltage | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| AEC-Q101 Option | Qualified version available on request | — |
| Tindminan RoHS | Compliant | Compliant |
| Mounting Technology | Wave solder / hand solder | — |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Power Dissipation | — | 430 mW |
| Total Capacitance | — | 2 pF |
| Junction Capacitance (Cj) | — | 1 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current at rated VR] |