BAT42-TAP vs 1N5711 比較
詳細並排比較 BAT42-TAP 由 Vishay Intertechnology 與 1N5711 由 STMicroelectronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BAT42-TAP | 1N5711 |
|---|---|---|
| 品牌 | Vishay Intertechnology | STMicroelectronics |
| 類別 | Diodes | Diodes |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Diode Type | Small-Signal Schottky Barrier | Small-signal Schottky barrier (RF) diode |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | — |
| Average Forward Current (IF(AV)) | 200 mA | — |
| Non-Repetitive Surge Current (IFSM) | 4.0 A | — |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | 0.41 V (at 1 mA, per MACOM) |
| Reverse Recovery | Fast switching (Schottky, no stored charge) | — |
| Junction Capacitance | [DATA_NEEDED: diode capacitance] | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage at rated VR] | — |
| 封裝 | DO-204AH (DO-35) glass axial | DO-35 (DO-204AH) hermetic axial-lead glass |
| 安裝類型 | Through Hole | Through-Hole |
| Termination Style | Axial Leads | — |
| Packaging Suffix | -TAP (Ammo tape packing) | — |
| Configuration | Single Diode | — |
| Protection Feature | PN junction guard ring against ESD / excessive voltage | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| AEC-Q101 Option | Qualified version available on request | — |
| RoHS 狀態 | Compliant | Compliant |
| Mounting Technology | Wave solder / hand solder | — |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Power Dissipation | — | 430 mW |
| Total Capacitance | — | 2 pF |
| Junction Capacitance (Cj) | — | 1 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current at rated VR] |