BSC009NE2LS5IATMA1 vs BSC009NE2LSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC009NE2LS5IATMA1 sa pamamagitan ng Infineon at BSC009NE2LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC009NE2LSATMA1 BSC009NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 0.9mOhm | Infineon

BSC009NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 0.9mOhm | Infineon

BSC009NE2LSATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC009NE2LS5IATMA1 BSC009NE2LSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Part Number BSC009NE2LS5IATMA1 —
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS™ 5 (25V/30V family) MOSFET (Metal Oxide)
Uri ng Transistor N-Channel MOSFET —
Configuration Single with built-in diode —
Drain-Source Voltage (V_DS) max 25 V —
Gate-Source Voltage (V_GS) max 20 V —
Gate-Threshold Voltage V_GS(th) typ 1.7 V (range 1.0-2.0 V) —
R_DS(on) max @ V_GS=10V 0.95 mΩ —
Continuous Drain Current (I_D) @ T_A=25°C 40 A —
Continuous Drain Current (I_D) @ T_C=25°C 217 A (pulsed, datasheet rating) —
Power Dissipation (P_D) @ T_A 2.5 W —
Power Dissipation (P_D) @ T_C 74 W —
Total Gate Charge (Q_G) typ 23 nC @ V_GS=0-4.5V —
Input Capacitance (C_iss) typ 3200 pF —
Hanay ng Temperature na Operasyon -55°C to +150°C -55C to +150C (TJ)
Packhaging PG-TDSON-8-7 (SuperSO8 5x6 mm) —
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) 1
Terminal Finish Matte Tin (e3 per JESD-609) —
Number of Terminals 8 —
Tindminan RoHS Compliant Compliant
Series — OptiMOS 25V
FET Type — N-Channel
Drain-Source Voltage (V_DS) — 25 V
Continuous Drain Current (I_D) at T_a — 41 A
Continuous Drain Current (I_D) at T_c — 100 A (Mouser listing), 255 A pulsed (DigiKey)
Pulsed Drain Current (I_DM) — 255 A
R_DS(on) Max @ V_GS=10V — 0.9 mOhm
Power Dissipation (T_a) — 2.5 W
Power Dissipation (T_c) — 96 W
Gate Threshold Voltage V_GS(th) Typ — [DATA_NEEDED: V_GS(th) typical value]
Packhaging / Kaso — PG-TDSON-8-7 (TDSON-8 FL)
Bilang ng Pin — 8

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