BSC009NE2LS5IATMA1 vs BSC009NE2LSATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSC009NE2LS5IATMA1 tarafından Infineon ve BSC009NE2LSATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
BSC009NE2LS5IATMA1 - 25V 0.95mΩ 217A OptiMOS 5 N-MOSFET | Infineon
BSC009NE2LS5IATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | BSC009NE2LS5IATMA1 | BSC009NE2LSATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer Part Number | BSC009NE2LS5IATMA1 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS™ 5 (25V/30V family) | MOSFET (Metal Oxide) |
| Transistor Türü | N-Channel MOSFET | — |
| Configuration | Single with built-in diode | — |
| Drain-Source Voltage (V_DS) max | 25 V | — |
| Gate-Source Voltage (V_GS) max | 20 V | — |
| Gate-Threshold Voltage V_GS(th) typ | 1.7 V (range 1.0-2.0 V) | — |
| R_DS(on) max @ V_GS=10V | 0.95 mΩ | — |
| Continuous Drain Current (I_D) @ T_A=25°C | 40 A | — |
| Continuous Drain Current (I_D) @ T_C=25°C | 217 A (pulsed, datasheet rating) | — |
| Power Dissipation (P_D) @ T_A | 2.5 W | — |
| Power Dissipation (P_D) @ T_C | 74 W | — |
| Total Gate Charge (Q_G) typ | 23 nC @ V_GS=0-4.5V | — |
| Input Capacitance (C_iss) typ | 3200 pF | — |
| İşletim Sıcaklığı Aralığı | -55°C to +150°C | -55C to +150C (TJ) |
| Paket | PG-TDSON-8-7 (SuperSO8 5x6 mm) | — |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | 1 (per JEDEC J-STD-020) | 1 |
| Terminal Finish | Matte Tin (e3 per JESD-609) | — |
| Number of Terminals | 8 | — |
| RoHS Durumu | Compliant | Compliant |
| Series | — | OptiMOS 25V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 25 V |
| Continuous Drain Current (I_D) at T_a | — | 41 A |
| Continuous Drain Current (I_D) at T_c | — | 100 A (Mouser listing), 255 A pulsed (DigiKey) |
| Pulsed Drain Current (I_DM) | — | 255 A |
| R_DS(on) Max @ V_GS=10V | — | 0.9 mOhm |
| Power Dissipation (T_a) | — | 2.5 W |
| Power Dissipation (T_c) | — | 96 W |
| Gate Threshold Voltage V_GS(th) Typ | — | [DATA_NEEDED: V_GS(th) typical value] |
| Paket / Kas | — | PG-TDSON-8-7 (TDSON-8 FL) |
| Pin Sayısı | — | 8 |