BSC009NE2LS5IATMA1 vs BSC009NE2LSATMA1 比較

詳細並排比較 BSC009NE2LS5IATMA1 由 Infineon 與 BSC009NE2LSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC009NE2LSATMA1 BSC009NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 0.9mOhm | Infineon

BSC009NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 0.9mOhm | Infineon

BSC009NE2LSATMA1 ✓ 啟用中

規格比較

參數 BSC009NE2LS5IATMA1 BSC009NE2LSATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Part Number BSC009NE2LS5IATMA1 —
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS™ 5 (25V/30V family) MOSFET (Metal Oxide)
電晶體類型 N-Channel MOSFET —
Configuration Single with built-in diode —
Drain-Source Voltage (V_DS) max 25 V —
Gate-Source Voltage (V_GS) max 20 V —
Gate-Threshold Voltage V_GS(th) typ 1.7 V (range 1.0-2.0 V) —
R_DS(on) max @ V_GS=10V 0.95 mΩ —
Continuous Drain Current (I_D) @ T_A=25°C 40 A —
Continuous Drain Current (I_D) @ T_C=25°C 217 A (pulsed, datasheet rating) —
Power Dissipation (P_D) @ T_A 2.5 W —
Power Dissipation (P_D) @ T_C 74 W —
Total Gate Charge (Q_G) typ 23 nC @ V_GS=0-4.5V —
Input Capacitance (C_iss) typ 3200 pF —
工作溫度範圍 -55°C to +150°C -55C to +150C (TJ)
封裝 PG-TDSON-8-7 (SuperSO8 5x6 mm) —
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (per JEDEC J-STD-020) 1
Terminal Finish Matte Tin (e3 per JESD-609) —
Number of Terminals 8 —
RoHS 狀態 Compliant Compliant
Series — OptiMOS 25V
FET Type — N-Channel
Drain-Source Voltage (V_DS) — 25 V
Continuous Drain Current (I_D) at T_a — 41 A
Continuous Drain Current (I_D) at T_c — 100 A (Mouser listing), 255 A pulsed (DigiKey)
Pulsed Drain Current (I_DM) — 255 A
R_DS(on) Max @ V_GS=10V — 0.9 mOhm
Power Dissipation (T_a) — 2.5 W
Power Dissipation (T_c) — 96 W
Gate Threshold Voltage V_GS(th) Typ — [DATA_NEEDED: V_GS(th) typical value]
封裝 / 外殼 — PG-TDSON-8-7 (TDSON-8 FL)
腳位數 — 8

資料表與資源

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