BSD235CH6327XTSA1 vs SI1553DL-T1-GE3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSD235CH6327XTSA1 sa pamamagitan ng Infineon at SI1553DL-T1-GE3 sa pamamagitan ng Vishay Intertechnology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ NakahandaVishay Intertechnology
SI1553DL-T1-GE3 - Complementary 20V MOSFET Array | Vishay
SI1553DL-T1-GE3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSD235CH6327XTSA1 | SI1553DL-T1-GE3 |
|---|---|---|
| Brand | Infineon | Vishay Intertechnology |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Vishay Siliconix |
| Part Family | OptiMOS™ | — |
| Configuration | N+P complementary dual MOSFET | — |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| N-Channel Continuous Drain Current (ID) | 950 mA | — |
| P-Channel Continuous Drain Current (ID) | 530 mA (negative polarity) | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Package Type | PG-SOT363-6-1 (SOT-363, 6-pin) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS™ low-voltage | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C (junction) | -55C to +150C (TJ) |
| Polarity | N-channel + P-channel | — |
| Channel Mode | Enhancement | — |
| Tindminan RoHS | Compliant (lead-free) | — |
| Level ng MSL | 1 | [DATA_NEEDED: MSL rating] |
| Bilang ng Pin | 6 | — |
| Part Number | — | SI1553DL-T1-GE3 |
| Transistor Polarity | — | Complementary N and P Channel |
| Number of Channels | — | 2 (1 N-channel + 1 P-channel) |
| Drain-Source Voltage VDS (max) | — | 20 V |
| Continuous Drain Current ID - N-Channel | — | 700 mA |
| Continuous Drain Current ID - P-Channel | — | 500 mA |
| On-Resistance RDS(on) - N-Channel | — | 0.32 ohm (typ at VGS = 4.5 V) |
| On-Resistance RDS(on) - P-Channel | — | [DATA_NEEDED: P-channel RDS(on) value] |
| Gate-Source Threshold VGS(th) | — | 2.5 V (max) |
| Gate-Source Voltage VGS (max) | — | [DATA_NEEDED: +/- VGS absolute maximum] |
| Power Dissipation PD | — | 340 mW |
| Packhaging | — | SC-70-6 / SOT-363-6 |
| Process Technology | — | TrenchFET |
| Termination Finish | — | Lead-free (Pb-free), Halogen-free |
| RoHS Compliance | — | Compliant per Directive 2002/95/EC |
| Wala sa Halogen | — | Yes (per IEC 61249-2-21) |