BSL207SPH6327XTSA1 vs IRF7205TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSL207SPH6327XTSA1 sa pamamagitan ng Infineon at IRF7205TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSL207SPH6327XTSA1 IRF7205TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type P-Channel P-Channel MOSFET
Technology MOSFET (Metal Oxide) IR HEXFET (4th generation)
Drain to Source Voltage (VDS) -20 V —
Continuous Drain Current (ID) at 25C 6 A (Ta) —
Power Dissipation (PD) 2 W (Ta) —
RDS(on) Max @ VGS = -4.5 V [DATA_NEEDED: RDS(on) max @ VGS=-4.5V] —
RDS(on) Max @ VGS = -2.5 V [DATA_NEEDED: RDS(on) max @ VGS=-2.5V] —
Drive Voltage (Max RDS(on), Min RDS(on)) 2.5 V, 4.5 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Packhaging TSOP-6 (PG-TSOP6-6) SO-8 (8-SO)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55C to +150C —
Series OptiMOS™ —
Automotive Qualification AEC-Q101 —
Tindminan RoHS Compliant —
Bilang ng Pin 6 —
Drain-to-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) at TA=25°C — -4.6 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=-10V — 70 mΩ
On-Resistance RDS(on) max @ VGS=-4.5V — 130 mΩ
Gate Threshold Voltage VGS(th) — -1.0 V to -3.0 V
Total Gate Charge Qg — 27 nC
Pwersang Pinahihigpit (TC=25°C) — 2.5 W
Temperature ng Junction na Operasyon — -55 °C to +150 °C
RoHS / Lead-Free — Lead-Free (PBF suffix), RoHS compliant
Packaging — Tape & Reel (TR suffix)

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