BSL207SPH6327XTSA1 vs IRF7205TRPBF 比較
詳細並排比較 BSL207SPH6327XTSA1 由 Infineon 與 IRF7205TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSL207SPH6327XTSA1 | IRF7205TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | P-Channel | P-Channel MOSFET |
| Technology | MOSFET (Metal Oxide) | IR HEXFET (4th generation) |
| Drain to Source Voltage (VDS) | -20 V | — |
| Continuous Drain Current (ID) at 25C | 6 A (Ta) | — |
| Power Dissipation (PD) | 2 W (Ta) | — |
| RDS(on) Max @ VGS = -4.5 V | [DATA_NEEDED: RDS(on) max @ VGS=-4.5V] | — |
| RDS(on) Max @ VGS = -2.5 V | [DATA_NEEDED: RDS(on) max @ VGS=-2.5V] | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 2.5 V, 4.5 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| 封裝 | TSOP-6 (PG-TSOP6-6) | SO-8 (8-SO) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +150C | — |
| Series | OptiMOS™ | — |
| Automotive Qualification | AEC-Q101 | — |
| RoHS 狀態 | Compliant | — |
| 腳位數 | 6 | — |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) at TA=25°C | — | -4.6 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=-10V | — | 70 mΩ |
| On-Resistance RDS(on) max @ VGS=-4.5V | — | 130 mΩ |
| Gate Threshold Voltage VGS(th) | — | -1.0 V to -3.0 V |
| Total Gate Charge Qg | — | 27 nC |
| 功率耗散 (TC=25°C) | — | 2.5 W |
| 工作接面溫度 | — | -55 °C to +150 °C |
| RoHS / Lead-Free | — | Lead-Free (PBF suffix), RoHS compliant |
| Packaging | — | Tape & Reel (TR suffix) |