BSP129H6327XTSA1 vs BSL308CH6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSP129H6327XTSA1 sa pamamagitan ng Infineon at BSL308CH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSP129H6327XTSA1 - 240V N-Ch Depletion MOSFET | Infineon | SOT-223
BSP129H6327XTSA1 ✓ NakahandaInfineon
BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon
BSL308CH6327XTSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSP129H6327XTSA1 | BSL308CH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel, Depletion Mode | — |
| Drain-Source Voltage (VDS) | 240 V | — |
| Continuous Drain Current (ID) at TA=25C | 350 mA | — |
| On-Resistance RDS(on) max | 4.2 ohm (some sources 6 ohm) | — |
| Power Dissipation (PD) at TA=25C | 1.8 W | — |
| Packhaging | PG-SOT223-4 (SOT-223, 3+Tab) | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55 C to +150 C (junction) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Threshold Voltage VGS(off) | [DATA_NEEDED: depletion threshold VGS(off)] | — |
| dv/dt Ruggedness | Yes (rated) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Process Technology | SIPMOS (vertical DMOS) | — |
| Drain Terminal | Tab (pin 4) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ low-voltage power MOSFETs |
| Configuration | — | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current - N-channel (ID, N-ch) | — | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | — | 2 A |
| Total Power Dissipation (Ptot) | — | 500 mW |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) N-ch] |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) P-ch] |
| Total Gate Charge (Qg) | — | 5 nC @ 10 V |
| Input Capacitance (Ciss) | — | 18 pF |
| Hanay ng Temperature na Operasyon | — | -55 °C to +150 °C |
| Automotive Qualified | — | Yes (per Infineon part-number suffix, automotive grade) |
| Wala sa Halogen | — | Yes (per Infineon product family convention) |