BSP129H6327XTSA1 vs BSL308CH6327XTSA1 比較

詳細並排比較 BSP129H6327XTSA1 由 Infineon 與 BSL308CH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSL308CH6327XTSA1 BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon

BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon

BSL308CH6327XTSA1 ✓ 啟用中

規格比較

參數 BSP129H6327XTSA1 BSL308CH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel, Depletion Mode —
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) at TA=25C 350 mA —
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm) —
Power Dissipation (PD) at TA=25C 1.8 W —
封裝 PG-SOT223-4 (SOT-223, 3+Tab) PG-TSOP6-6 (TSOP-6, 6 pins)
安裝類型 Surface Mount Surface Mount
工作溫度 -55 C to +150 C (junction) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Threshold Voltage VGS(off) [DATA_NEEDED: depletion threshold VGS(off)] —
dv/dt Ruggedness Yes (rated) —
Automotive Qualification AEC-Q101 qualified —
RoHS 狀態 Compliant Compliant
Lead-Free Yes Yes
MSL 等級 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Process Technology SIPMOS (vertical DMOS) —
Drain Terminal Tab (pin 4) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ low-voltage power MOSFETs
Configuration — Complementary dual MOSFET (1 N-channel + 1 P-channel)
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current - N-channel (ID, N-ch) — 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) — 2 A
Total Power Dissipation (Ptot) — 500 mW
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
On-State Resistance N-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) P-ch]
Total Gate Charge (Qg) — 5 nC @ 10 V
Input Capacitance (Ciss) — 18 pF
工作溫度範圍 — -55 °C to +150 °C
Automotive Qualified — Yes (per Infineon part-number suffix, automotive grade)
無鹵素 — Yes (per Infineon product family convention)

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