BSP129H6327XTSA1 vs BSL308CH6327XTSA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSP129H6327XTSA1 tarafından Infineon ve BSL308CH6327XTSA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
BSP129H6327XTSA1 - 240V N-Ch Depletion MOSFET | Infineon | SOT-223
BSP129H6327XTSA1 ✓ Aktif
Özellik Karşılaştırması
| Parametre | BSP129H6327XTSA1 | BSL308CH6327XTSA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel, Depletion Mode | — |
| Drain-Source Voltage (VDS) | 240 V | — |
| Continuous Drain Current (ID) at TA=25C | 350 mA | — |
| On-Resistance RDS(on) max | 4.2 ohm (some sources 6 ohm) | — |
| Power Dissipation (PD) at TA=25C | 1.8 W | — |
| Paket | PG-SOT223-4 (SOT-223, 3+Tab) | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı | -55 C to +150 C (junction) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Threshold Voltage VGS(off) | [DATA_NEEDED: depletion threshold VGS(off)] | — |
| dv/dt Ruggedness | Yes (rated) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL Seviyesi | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Process Technology | SIPMOS (vertical DMOS) | — |
| Drain Terminal | Tab (pin 4) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ low-voltage power MOSFETs |
| Configuration | — | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current - N-channel (ID, N-ch) | — | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | — | 2 A |
| Total Power Dissipation (Ptot) | — | 500 mW |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) N-ch] |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) P-ch] |
| Total Gate Charge (Qg) | — | 5 nC @ 10 V |
| Input Capacitance (Ciss) | — | 18 pF |
| İşletim Sıcaklığı Aralığı | — | -55 °C to +150 °C |
| Automotive Qualified | — | Yes (per Infineon part-number suffix, automotive grade) |
| Klorürsüz | — | Yes (per Infineon product family convention) |