BSZ130N03LSGATMA1 vs IPD30N08S2L21ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ130N03LSGATMA1 sa pamamagitan ng Infineon at IPD30N08S2L21ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ130N03LSGATMA1 - 30V OptiMOS N-FET, 35A, PG-TSDSON-8 | Infineon
BSZ130N03LSGATMA1 ✓ NakahandaInfineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSZ130N03LSGATMA1 | IPD30N08S2L21ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 25V / 30V | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Ta=25 C) | 10 A | — |
| Patuloy na Drain Current (TC=25°C) | 35 A | — |
| On-State Resistance Rds(on) max @ Vgs=10V | 13 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | 2.2 V | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 25 W | — |
| Packhaging | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) | PG-TO252-3-11 (DPAK-2) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (junction) | -55C to +175C |
| Level ng MSL | 1 (per JEDEC J-STD-020) | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Qualification | Industrial / Commercial (non-automotive) | — |
| Series | — | OptiMOS |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at Tc=25C | — | 30 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) at VGS=10 V | — | 26 milliohm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (L series) |
| Gate Charge (Qg) typ | — | 56 nC |
| Power Dissipation (PD) at Tc=25C | — | 136 W |
| Maximum Junction Temperature | — | +175C |
| Bilang ng Pin | — | 3 (Drain tab + Gate + Source) |
| Automotive Qualification | — | AEC-Q101 qualified |