EP1SGX25DF800C6N vs EP1SGX40GF800C7N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP1SGX25DF800C6N sa pamamagitan ng Intel at EP1SGX40GF800C7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP1SGX25DF800C6N EP1SGX40GF800C7N
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Obsolete Obsolete
Family Stratix GX Stratix GX
Logic Elements 25,560 LEs 41,250
Maximum Transceiver Channels 20 channels —
Maximum Transceiver Data Rate 3.1875 Gbps —
Packhaging FBGA-780 (FineLine BGA, 800-ball per JEDEC ordering code) 800-ball FineLine BGA (FBGA-800)
Process Node [DATA_NEEDED: process node] —
Core Voltage 1.5 V 1.5 V
Temperature na Operasyon Commercial (0 C to +85 C) —
Speed Grade 6 7 (commercial, fastest)
Configuration Method Passive Serial / Passive Parallel / Active Serial / JTAG —
Transceiver Encoding 8B/10B —
Clock Data Recovery (CDR) Yes, integrated per channel —
Uri ng Memory TriMatrix embedded SRAM —
DSP Blocks Yes, embedded multiplier blocks 624
Uri ng Pagpapasok Surface Mount (BGA) Surface Mount (BGA)
Tindminan RoHS [DATA_NEEDED: RoHS status] —
Lead Free [DATA_NEEDED: lead free status] —
Embedded Memory Bits — 3,423,744 bits
Multi-Gigabit Transceivers — 20 channels, up to 3.1875 Gbps
PLLs — 4
Maximum User I/O Pins — [DATA_NEEDED: max user I/O count]
Process Technology — 130 nm CMOS
I/O Voltage — 1.5 V / 1.8 V / 2.5 V / 3.3 V (LVTTL/LVCMOS/LVDS)
Temperature ng Junction na Operasyon — 0C to +85C
Configuration Mode — Passive Serial / Fast Passive Parallel / Passive Parallel Asynchronous / JTAG
Memory Interfaces Supported — DDR, DDR2, QDR, RLDRAM

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