EP20K200CB356C8ES vs EP20K100CB356C8ES Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP20K200CB356C8ES sa pamamagitan ng Intel at EP20K100CB356C8ES sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP20K200CB356C8ES | EP20K100CB356C8ES |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | NRND |
| Series | APEX 20KC | — |
| Family | APEX 20KC MultiCore Interconnect FPGA | APEX 20K |
| System Gates | 200,000 | — |
| Logic Elements / Cells | 8,320 | — |
| User I/O Count | 271 | — |
| Core Voltage | 1.8 V | — |
| Process Technology | 0.15 µm | — |
| Operating Frequency (max) | 301.21 MHz | — |
| Package Type | 356-LBGA (Ball Grid Array) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0°C to +85°C (Commercial) | 0C to +85C (Commercial) |
| Speed Grade | C8 (8 ns) | 8 |
| Uri ng Memory | SRAM-based, Embedded System Blocks (ESBs) | — |
| Programming Interface | JTAG / ByteBlaster / USB-Blaster | — |
| Design Software | Quartus II / MAX+PLUS II | — |
| Tindminan RoHS | [DATA_NEEDED: rohs status] | [DATA_NEEDED: rohs status] |
| Embedded Memory | Yes (ESBs) | — |
| Logic Elements | — | 4160 |
| Typical Gates | — | 100000 |
| Maximum User I/O | — | 252 |
| Embedded Array Blocks (EABs) | — | 26 |
| Total RAM Bits | — | 53248 |
| Packhaging | — | 356-ball BGA |
| Level ng MSL | — | 3 (168 Hours) |
| Part Status Note | — | Engineering Sample (ES) |
| Core Voltage (typical) | — | 2.5 V |
| I/O Voltage (typical) | — | 3.3 V |
| Configuration Interface | — | JTAG (IEEE 1149.1) |