EP20K200CB356C8ES vs EP20K100CB356C8ES 比較
詳細並排比較 EP20K200CB356C8ES 由 Intel 與 EP20K100CB356C8ES 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP20K200CB356C8ES | EP20K100CB356C8ES |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | NRND | NRND |
| Series | APEX 20KC | — |
| Family | APEX 20KC MultiCore Interconnect FPGA | APEX 20K |
| System Gates | 200,000 | — |
| Logic Elements / Cells | 8,320 | — |
| User I/O Count | 271 | — |
| Core Voltage | 1.8 V | — |
| Process Technology | 0.15 µm | — |
| Operating Frequency (max) | 301.21 MHz | — |
| Package Type | 356-LBGA (Ball Grid Array) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | 0°C to +85°C (Commercial) | 0C to +85C (Commercial) |
| Speed Grade | C8 (8 ns) | 8 |
| 記憶體類型 | SRAM-based, Embedded System Blocks (ESBs) | — |
| Programming Interface | JTAG / ByteBlaster / USB-Blaster | — |
| Design Software | Quartus II / MAX+PLUS II | — |
| RoHS 狀態 | [DATA_NEEDED: rohs status] | [DATA_NEEDED: rohs status] |
| Embedded Memory | Yes (ESBs) | — |
| Logic Elements | — | 4160 |
| Typical Gates | — | 100000 |
| Maximum User I/O | — | 252 |
| Embedded Array Blocks (EABs) | — | 26 |
| Total RAM Bits | — | 53248 |
| 封裝 | — | 356-ball BGA |
| MSL 等級 | — | 3 (168 Hours) |
| Part Status Note | — | Engineering Sample (ES) |
| Core Voltage (typical) | — | 2.5 V |
| I/O Voltage (typical) | — | 3.3 V |
| Configuration Interface | — | JTAG (IEEE 1149.1) |