EP2SGX30CF780C6 vs EP2SGX30CF780I4N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP2SGX30CF780C6 sa pamamagitan ng Intel at EP2SGX30CF780I4N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP2SGX30CF780C6 | EP2SGX30CF780I4N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | NRND |
| Family | Stratix II GX | Stratix II GX |
| Series | EP2SGX | — |
| Logic Elements (LE) | 33,880 | — |
| Adaptive Logic Modules (ALM) | 13,540 | — |
| Embedded Memory Bits | 1,369,728 bits (171 KBytes) | — |
| Embedded Multiplier 18x18 | 64 (estimated, datasheet required for exact count) | — |
| User I/O Pins | 361 | — |
| High-Speed Transceivers | Up to 8 channels (FPGA-dependent configuration) | — |
| Transceiver Data Rate | Up to 6.375 Gbps | — |
| Packhaging | 780-ball FineLine BGA (F780) | 780-ball FC-FBGA, 29 x 29 mm, 1.0 mm pitch |
| Speed Grade | C6 (commercial, mid-speed) | — |
| Temperature na Operasyon | 0C to +85C (commercial) | -40C to +85C (Industrial) |
| Core Voltage | 1.2 V (typical) | — |
| Configuration Mode | Enhanced passive/active (EPC) supported | — |
| Process Technology | 90 nm | 90 nm CMOS |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Lead-Free | [DATA_NEEDED: lead-free status] | Yes |
| Logic Elements | — | 33,880 |
| Logic Cells / CLBs | — | 33,880 |
| Core Supply Voltage | — | 1.15 V to 1.25 V |
| Maximum Internal Frequency | — | 622.08 MHz |
| Embedded Transceivers | — | 4 channels (up to 3.125 Gbps at C4) |
| Pin / Terminal Count | — | 780 |
| Uri ng Pagpapasok | — | Surface Mount (BGA) |
| Uri ng Memory | — | Embedded SRAM, external DDR/DDR2/QDR support |
| Configuration | — | JTAG / passive serial / fast passive parallel |