EP3C10E144C7N vs EP3C10F256C6 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3C10E144C7N sa pamamagitan ng Intel at EP3C10F256C6 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3C10E144C7N | EP3C10F256C6 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Cyclone® III | Cyclone III |
| Manufacturer | Intel (formerly Altera) | — |
| Logic Elements (LEs) | 10,320 | — |
| Embedded Memory (M9K BRAM) | 414 Kbits | — |
| Embedded 18x18 Multipliers | 23 | 23 |
| Maximum User I/Os | 94 | 182 |
| PLLs | 4 | 2 |
| Core Voltage (VCCINT) | 1.15 V to 1.25 V | 1.15 V to 1.25 V (typ. 1.2 V) |
| Maximum Internal Clock Frequency | 437.5 MHz | — |
| Packhaging | 144-pin LQFP Exposed Pad (EQFP-144) | 256-FBGA (FineLine BGA, 17x17 mm, 1.0 mm pitch) |
| Process Technology | TSMC 65 nm low-power CMOS | 60 nm low-power CMOS |
| Configuration Modes | JTAG, Active Serial, Active Parallel | — |
| Temperature ng Junction na Operasyon | 0C to +85C (Commercial, C7 speed grade) | — |
| I/O Standards Supported | LVDS, LVCMOS, SSTL, HSTL (per bank VCCIO) | — |
| Tindminan RoHS | Compliant | Compliant (lead-free FBGA) |
| Logic Elements (LE) | — | 10,320 |
| Total Memory Bits | — | 423,936 bits |
| Uri ng Pagpapasok | — | Surface Mount (BGA) |
| I/O Voltage (VCCIO) | — | 1.2 V to 3.3 V (bank-dependent) |
| Configuration Memory | — | SRAM-based (external EPCS flash required) |
| Temperature na Operasyon | — | -40 C to +125 C (industrial, suffix 'C') |
| Speed Grade | — | 6 |
| Level ng MSL | — | 3 (168 hours) |