EP3SE260F1517C2G vs EP3SE260F1517C3N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260F1517C2G sa pamamagitan ng Intel at EP3SE260F1517C3N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Intel
EP3SE260F1517C3N EP3SE260F1517C3N - 260K LE Stratix III E FPGA | Intel

EP3SE260F1517C3N - 260K LE Stratix III E FPGA | Intel

EP3SE260F1517C3N ⚠ Huling Pagbili

Pagsanggunian na paghahambing

Parametro EP3SE260F1517C2G EP3SE260F1517C3N
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle NRND Huling Pagbili
Family Stratix III E Stratix III E
Logic Elements 254,400 254,400
Adaptive Logic Modules (ALMs) 81,760 —
Total Memory Bits 16,727,680 (16.67 Mbit) —
Embedded Memory (M9K Blocks) 864 —
Embedded Multipliers (18x18) 768 —
User I/O Pins 976 —
Transceiver Channels 12 —
Transceiver Data Rate (max) 3.75 Gbps (C2 grade) —
PLLs (Fractional + Clock Multiplier) 8 fractional + 4 CMU —
Global Clock Networks 20 16
Packhaging 1517-ball FCBGA, 40x40 mm 1517-BBGA (FCBGA)
Speed Grade C2 (commercial, ~6 ns) C3 (commercial)
Temperature na Operasyon 0C to 85C (commercial, "C" suffix) —
Process Node 40 nm TSMC —
Tindminan RoHS Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
Embedded Memory — 16,672,768 bits (16.7 Mbits)
User I/Os — 976
DSP Blocks (18x18 Multipliers) — 816
M9K Memory Blocks — 1,040
Maximum Transceiver Data Rate — 600 Mbps
PLLs — 4
Process Technology — 65 nm TSMC low-power CMOS
Temperature ng Junction na Operasyon — 0 C to +85 C (commercial)
Uri ng Pagpapasok — Surface Mount
External Memory Interfaces — DDR3, DDR2, QDRII+, RLDRAM2

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