EP3SE50F780I4LG vs EP3SE110F780I4L Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE50F780I4LG sa pamamagitan ng Intel at EP3SE110F780I4L sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE50F780I4LG | EP3SE110F780I4L |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | NRND |
| Series | Stratix III E | — |
| Family | Stratix III | Stratix III E |
| Logic Elements | 47,500 | 107,500 |
| Adaptive Logic Modules (ALMs) | 19,000 | — |
| Embedded Memory | 5.49 Mbit | 8,936,448 bits (8.9 Mbit) |
| Maximum User I/Os | 488 | — |
| Packhaging | 780-ball FCBGA (FBGA-780) | 780-pin FC-FBGA (Flip-Chip BGA) |
| Operating Supply Voltage (Core) | 1.1 V | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (FC-FBGA) |
| Hanay ng Temperature na Operasyon | -40 C to +100 C | — |
| Process Node | 65 nm | — |
| DSP Blocks | Yes (dedicated, count not in source data) | — |
| High-Speed Transceivers | Multi-gigabit, count not in source data | — |
| Lead-Free / RoHS | Yes (G suffix = Pb-free) | — |
| Packaging | Tray | — |
| Uri ng Memory | Embedded SRAM block RAM | — |
| LABs (Logic Array Blocks) | — | 4,300 |
| User I/Os | — | 488 |
| Maximum Operating Frequency | — | 375 MHz |
| Process Technology | — | 65 nm CMOS |
| Core Voltage | — | 0.9 V |
| Package Body Size | — | 29 mm × 29 mm |
| Ball Pitch | — | 1.0 mm |
| Operating Temperature (Industrial) | — | -40 °C to +100 °C |
| Tindminan RoHS | — | Compliant (per legacy Altera data) |
| Product Status | — | Not Recommended for New Designs (NRND) |