EP3SE50F780I4LG vs EP3SE110F780I4L 比較
詳細並排比較 EP3SE50F780I4LG 由 Intel 與 EP3SE110F780I4L 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP3SE50F780I4LG | EP3SE110F780I4L |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | NRND | NRND |
| Series | Stratix III E | — |
| Family | Stratix III | Stratix III E |
| Logic Elements | 47,500 | 107,500 |
| Adaptive Logic Modules (ALMs) | 19,000 | — |
| Embedded Memory | 5.49 Mbit | 8,936,448 bits (8.9 Mbit) |
| Maximum User I/Os | 488 | — |
| 封裝 | 780-ball FCBGA (FBGA-780) | 780-pin FC-FBGA (Flip-Chip BGA) |
| Operating Supply Voltage (Core) | 1.1 V | — |
| 安裝類型 | Surface Mount | Surface Mount (FC-FBGA) |
| 工作溫度範圍 | -40 C to +100 C | — |
| Process Node | 65 nm | — |
| DSP Blocks | Yes (dedicated, count not in source data) | — |
| High-Speed Transceivers | Multi-gigabit, count not in source data | — |
| Lead-Free / RoHS | Yes (G suffix = Pb-free) | — |
| Packaging | Tray | — |
| 記憶體類型 | Embedded SRAM block RAM | — |
| LABs (Logic Array Blocks) | — | 4,300 |
| User I/Os | — | 488 |
| Maximum Operating Frequency | — | 375 MHz |
| Process Technology | — | 65 nm CMOS |
| Core Voltage | — | 0.9 V |
| Package Body Size | — | 29 mm × 29 mm |
| Ball Pitch | — | 1.0 mm |
| Operating Temperature (Industrial) | — | -40 °C to +100 °C |
| RoHS 狀態 | — | Compliant (per legacy Altera data) |
| Product Status | — | Not Recommended for New Designs (NRND) |