EPF6010ATI100-2N vs EPF6010ATC100-3N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EPF6010ATI100-2N sa pamamagitan ng Intel at EPF6010ATC100-3N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Intel
EPF6010ATC100-3N EPF6010ATC100-3N - FLEX 6000 FPGA, 880 Cells, 100-TQFP | Intel

EPF6010ATC100-3N - FLEX 6000 FPGA, 880 Cells, 100-TQFP | Intel

EPF6010ATC100-3N ⚠ Huling Pagbili

Pagsanggunian na paghahambing

Parametro EPF6010ATI100-2N EPF6010ATC100-3N
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Obsolete Huling Pagbili
Family FLEX 6000 FLEX 6000
Device Type FPGA (Field Programmable Gate Array) —
System Gates 10,000 —
Logic Elements / Cells 880 880
Logic Array Blocks (LABs) 88 88
Maximum User I/O 71 —
Process Technology 0.42 µm CMOS SRAM 0.42 µm CMOS
Core Supply Voltage 3.3 V —
I/O Supply Voltage 3.3 V (5 V tolerant input) —
Maximum Internal Frequency 166.67 MHz 142.86 MHz
Configuration Method SRAM, serial/parallel via EPC PROM or JTAG —
Packhaging TQFP-100 (Fine-line BGA-100 equivalent land pattern) 100-pin TQFP (14 x 14 x 1.4 mm)
Hanay ng Temperature na Operasyon -40 °C to +85 °C (Industrial) —
Tindminan RoHS Unknown - legacy Altera-era product Compliant
Lead-Free Unknown —
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL [DATA_NEEDED: MSL Level] 3 (168 hours)
Equivalent Gate Count — 10,000 gates
User I/Os — 71
Supply Voltage (Operating) — 3.0 V to 3.6 V
Speed Grade — -3
Temperature na Operasyon — 0 °C to +70 °C (commercial)
Programming Method — In-system SRAM via ByteBlaster/BitBlaster

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