H5AN8G6NCJR-VKC vs H5AN8G6NCJR-UHC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G6NCJR-VKC sa pamamagitan ng SK hynix at H5AN8G6NCJR-UHC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G6NCJR-VKC | H5AN8G6NCJR-UHC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gbit | — |
| Memory Organization | 512M x 16 | — |
| Rate ng Data | 2666 Mbps (MT/s) | — |
| Clock Frequency | 1.333 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | — |
| Interface | Parallel | — |
| Temperature na Operasyon | 0C to +95C | 0C to +95C |
| Packhaging | FBGA-96 | FBGA-96 (96-ball) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Standby Current | 28 mA | — |
| Operating Current | 45 mA | — |
| Mga Karakteristika | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration | — |
| Lead-Free / Halogen-Free | Yes (per datasheet description) | Yes (per family datasheet) |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS certification statement] |
| Katayuan ng Lifecycle | Active | — |
| Density | — | 8 Gb |
| Organisasyon | — | 512M x 16 |
| Speed Grade | — | DDR4-2400 (2400 Mbps/pin) |
| Volte ng Pagbibigay | — | 1.2 V |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask (DM) | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |